公开(公告)号：US07364942B2

公开(公告)日：2008-04-29

申请号：US11786515

申请日：2007-04-12

Applicant: John R. Martin

Inventor： John R. Martin

IPC: H01L21/00

CPC classification number: H01L21/3122 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02263 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.

Abstract translation: 本发明公开了一种在微加工结构上形成持久的抗静电表面的方法，同时它们仍然是晶片形式（即，在它们被分离成用于组装成包装的分立装置之前）。 该方法涉及材料的气相沉积以产生低粘度表面。 它还公开了有效赋予芯片抗静电性能的化学品。 这些包括聚苯基硅氧烷，硅烷醇封端的苯基硅氧烷和类似的材料。

公开(公告)号：US07075160B2

公开(公告)日：2006-07-11

申请号：US10454867

申请日：2003-06-04

Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC: H01L27/14 ,  H01L29/82 ,  H01L29/84

CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US20240246812A1

公开(公告)日：2024-07-25

申请号：US18564996

申请日：2022-06-22

Applicant: UNIVERSITY OF WASHINGTON

Inventor： Bo Zhang ,  Todd Anderson ,  Chris McAllister

IPC: B81C1/00 ,  B81B7/00 ,  C03C15/00 ,  C03C17/22 ,  C03C17/245 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  G01N33/487

CPC classification number: B81C1/00341 ,  B81B7/00 ,  C03C15/00 ,  C03C17/225 ,  C03C17/245 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  G01N33/48721 ,  B81B2203/0127 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0176 ,  B81C2201/019 ,  C03C2218/152 ,  C03C2218/153 ,  C03C2218/32

Abstract: An ultrathin free-standing solid state membrane, including an etched well on a glass wafer, and a layer of SiX deposited on a backside of the etched well on the glass wafer.

公开(公告)号：US20180201503A1

公开(公告)日：2018-07-19

申请号：US15923013

申请日：2018-03-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00 ,  G06F17/50 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US20180201502A1

公开(公告)日：2018-07-19

申请号：US15916962

申请日：2018-03-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00 ,  G06F17/50 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US09981842B2

公开(公告)日：2018-05-29

申请号：US15162988

申请日：2016-05-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00 ,  G06F17/50 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US09796577B2

公开(公告)日：2017-10-24

申请号：US14778721

申请日：2015-04-15

Applicant: Boe Technology Group Co., Ltd.

Inventor： Chunyan Ji ,  Tian Yang

IPC: B81B3/00 ,  B81C1/00 ,  C23C14/06 ,  C23C14/14 ,  C23C14/34 ,  G01F1/56 ,  G01J1/42 ,  H02S20/00 ,  F24J2/52

CPC classification number: B81B3/0021 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00142 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2201/0181 ,  C23C14/0605 ,  C23C14/0617 ,  C23C14/14 ,  C23C14/34 ,  F24S25/30 ,  F24S25/636 ,  F24S2025/016 ,  F24S2025/801 ,  F24S2025/807 ,  G01F1/56 ,  G01J1/42 ,  H02S20/00 ,  Y02E10/47 ,  Y02E10/50

Abstract: The present disclosure relates to the field of sensor manufacturing technology, particularly discloses a method for manufacturing a micro-sensor body, comprising the steps of S1: applying a wet colloidal material on a substrate to form a colloidal layer, and covering a layer of one-dimensional nanowire film on the surface of the colloidal layer to form a sensor embryo; S2: drying the colloidal layer of the sensor embryo to an extent that the colloidal layer cracks into a plurality of colloidal islands, a portion of the one-dimensional nanowire film contracting into a contraction diaphragm adhered to the surface of the colloidal islands while the other portion of the one-dimensional nanowire film being stretched into a connection structure connected between the adjacent contraction diaphragms. By the method for manufacturing a micro-sensor body of the present disclosure, the contraction diaphragms and connection structures formed by stretching the one-dimensional nanowire film are connected stably, which enhances the stability of the sensor devices; and the cracking manner renders it easy to obtain a large-scale of sensor bodies with connection structure arrays in stable suspension.

公开(公告)号：US20170166435A1

公开(公告)日：2017-06-15

申请号：US15441791

申请日：2017-02-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Hua Chu ,  Kuei-Sung Chang ,  Chung-Hsien Lin

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C1/00269 ,  B81C1/00579 ,  B81C2201/0111 ,  B81C2201/014 ,  B81C2201/0176 ,  B81C2203/0118 ,  B81C2203/019

Abstract: A method for forming a MEMS structure includes forming, on a MEMS substrate, an interconnect structure having conductive lines and a first conductive plug of a semiconductor material, forming an etch stop layer on the interconnect structure, forming a dielectric layer over the etch stop layer, bonding a silicon substrate over the dielectric layer, forming a second and third conductive plugs of the semiconductor material in the silicon substrate, wherein the second conductive plug is configured to be electrically coupled with the first conductive plug and third conductive plug is configured to function as an anti-stiction bump, forming a MEMS device electrically coupled with the second conductive feature, and forming a bonding pad on the silicon substrate and surrounded by the second conductive plug.

公开(公告)号：US09618342B2

公开(公告)日：2017-04-11

申请号：US14270596

申请日：2014-05-06

Applicant: Chinese Academy of Sciences Institute of Geology and Geophysics

Inventor： Lian Zhong Yu ,  Chen Sun

IPC: G01C19/5747 ,  G01C19/5769

CPC classification number: G01C19/5769 ,  B81B3/0048 ,  B81B2201/0242 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0159 ,  B81C2201/0176 ,  B81C2203/0118 ,  G01C19/574 ,  G01C19/5747

Abstract: A MEMS anti-phase vibratory gyroscope includes two measurement masses with a top cap and a bottom cap each coupled with a respective measurement mass. The measurement masses are oppositely coupled with each other in the vertical direction. Each measurement mass includes an outer frame, an inner frame located within the outer frame, and a mass located within the inner frame. The two measurement masses are coupled with each other through the outer frame. The inner frame is coupled with the outer frame by a plurality of first elastic beams. The mass is coupled with the inner frame by a plurality of second elastic beams. A comb coupling structure is provided along opposite sides of the outer frame and the inner frame. The two masses vibrate toward the opposite direction, and the comb coupling structure measures the angular velocity of rotation.

公开(公告)号：US20160264406A1

公开(公告)日：2016-09-15

申请号：US15162994

申请日：2016-05-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.