公开(公告)号：US20130224511A1

公开(公告)日：2013-08-29

申请号：US13404274

申请日：2012-02-24

申请人： ARTUR KOLICS

发明人： ARTUR KOLICS

IPC分类号： B32B15/04 ,  C09D1/00 ,  B32B3/30 ,  B05D5/12 ,  B32B3/10

CPC分类号： C23C18/1882 ,  B32B3/30 ,  B32B15/04 ,  C23C18/52 ,  H01L21/76831 ,  H01L21/76879 ,  Y10T428/12361 ,  Y10T428/12389 ,  Y10T428/24917

摘要： One aspect of the present invention includes a method of fabricating an electronic device. According to one embodiment, the method comprises providing a substrate having dielectric oxide surface areas adjacent to electrically conductive surface areas, chemically bonding an anchor compound with the dielectric oxide surface areas so as to form an anchor layer, initiating the growth of a metal using the electrically conductive surface areas and growing the metal so that the anchor layer also bonds with the metal. The anchor compound has at least one functional group capable of forming a chemical bond with the oxide surface and has at least one functional group capable of forming a chemical bond with the metal. Another aspect of the present invention is an electronic device. A third aspect of the present invention is a solution comprising the anchor compound.

公开(公告)号：US08415261B1

公开(公告)日：2013-04-09

申请号：US13270809

申请日：2011-10-11

申请人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

发明人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

IPC分类号： H01L21/00 ,  B01J19/12

CPC分类号： H01L21/7684 ,  C23C18/1607 ,  C23C18/1882 ,  C25D5/02 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S414/135

摘要： Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

公开(公告)号：US08182873B2

公开(公告)日：2012-05-22

申请号：US10558172

申请日：2004-03-31

申请人： Toru Imori ,  Junnosuke Sekiguchi ,  Atsushi Yabe ,  Yoshihisa Fujihira

发明人： Toru Imori ,  Junnosuke Sekiguchi ,  Atsushi Yabe ,  Yoshihisa Fujihira

IPC分类号： C23C18/18 ,  B05D1/38 ,  B05D3/02 ,  B05D3/10

CPC分类号： C23C18/18 ,  C23C18/1865 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/1893 ,  C23C18/2033 ,  C23C18/2066 ,  C23C18/2086 ,  C23C18/30

摘要： A method for metal plating with good adhesion to materials that are difficult to plate wherein a material to be plated is surface-treated with a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability, is heat treated at a high temperature of at least 150° C. in air or an inert gas atmosphere, surface treatment is performed with a solution containing a noble metal compound, and electroless plating is performed. Alternatively, a metal plating method is provided wherein a material to be plated is surface-treated with a liquid in which a noble metal compound and a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability have already been mixed or reacted, is heat treated at a high temperature of at least 150° C. in air or an inert gas atmosphere, and electroless plating is performed.

摘要翻译： 一种金属电镀方法，对于难以镀覆的材料具有良好的粘附性，其中用分子中的具有金属捕获能力的官能团的硅烷偶联剂对待镀覆的材料进行表面处理，在 在空气或惰性气体气氛中高温至少为150℃，用含有贵金属化合物的溶液进行表面处理，进行化学镀。 或者，提供一种金属镀覆方法，其中将待镀材料用贵金属化合物和其分子中具有金属捕集能力的官能团的硅烷偶联剂已经混合的液体进行表面处理 或反应后，在空气或惰性气体气氛中，在至少150℃的高温下进行热处理，进行化学镀。

公开(公告)号：US20110201190A1

公开(公告)日：2011-08-18

申请号：US13027706

申请日：2011-02-15

申请人： STEPHAN HERMES ,  Sorin Ivanovici

发明人： STEPHAN HERMES ,  Sorin Ivanovici

IPC分类号： H01L21/3205 ,  C25D15/00

CPC分类号： C25D5/02 ,  C23C18/1882 ,  C23C18/2066 ,  C25D5/54 ,  H01L21/76873 ,  H01L21/76874

摘要： The invention relates to a composition for printing a seed layer for electrodeposition or electroless deposition of a metal for the production of full-area or structured metallic surfaces on a substrate, comprising 0.1 to 6% by weight of electrolessly and/or electrolytically coatable particles, 40 to 98.8% by weight of at least one solvent, 0 to 15% by weight of a crosslinker, 0.1 to 6% by weight of at least one dispersing additive, 0 to 5% by weight of at least one further additive and 1 to 20% by weight of at least one polymer, said at least one polymer being in the form of a dispersion. The invention further relates to a process for producing full-area or structured metallic surfaces on a substrate, and to a use of the process.

摘要翻译： 本发明涉及一种用于印刷种子层的组合物，用于在基底上生产全面或结构化金属表面的金属进行电沉积或无电沉积，其包含0.1至6重量％的无电解和/或电解可涂覆的颗粒， 40至98.8重量％的至少一种溶剂，0至15重量％的交联剂，0.1至6重量％的至少一种分散添加剂，0至5重量％的至少一种其它添加剂和1至 20重量％的至少一种聚合物，所述至少一种聚合物是分散体的形式。 本发明还涉及一种用于在基底上生产全面或结构化金属表面的方法，以及该方法的用途。

公开(公告)号：US20110086165A1

公开(公告)日：2011-04-14

申请号：US12893613

申请日：2010-09-29

申请人： Frédéric-Xavier GAILLARD ,  Olivier RACCURT

发明人： Frédéric-Xavier GAILLARD ,  Olivier RACCURT

IPC分类号： B05D5/12 ,  B05D1/18

CPC分类号： H01M8/0232 ,  C23C18/1601 ,  C23C18/1603 ,  C23C18/1639 ,  C23C18/1644 ,  C23C18/166 ,  C23C18/1865 ,  C23C18/1882 ,  C23C18/31 ,  C23C18/54

摘要： A porous silicon zone is metallized by performing in situ reduction of metallic ions dissolved in an aqueous solution and fixing of the metallic particles obtained on said zone in a single step. This step consists in particular in bringing the solution containing the metallic ions into contact with the zone to be metallized, the surface whereof has previously been functionalized to enable in situ reduction of the metallic ions and fixing of the metallic particles. Functionalization of the porous silicon zone is achieved by grafting two particular and distinct types of chemical functions. The first function used is a chelating chemical function for the metallic ions and/or for the metal corresponding to the metallic ions, whereas the second function is a reducing chemical function for the metallic ions. Such a metallization can be used for producing an electrically conducting porous diffusion layer of a fuel cell.

摘要翻译： 通过原位还原溶解在水溶液中的金属离子并在单一步骤中固定在所述区域上获得的金属颗粒，多孔硅区域被金属化。 该步骤特别在于使含有金属离子的溶液与要金属化的区域接触，其表面已经被官能化以使金属离子原位还原和固定金属颗粒。 多孔硅区域的功能化是通过接枝两种特殊和不同类型的化学功能来实现的。 所使用的第一功能是金属离子和/或对应于金属离子的金属的螯合化学功能，而第二个功能是金属离子的还原化学功能。 这种金属化可用于制造燃料电池的导电多孔扩散层。

公开(公告)号：US20100300728A1

公开(公告)日：2010-12-02

申请号：US12473004

申请日：2009-05-27

申请人： EZEKIEL KRUGLICK

发明人： EZEKIEL KRUGLICK

IPC分类号： H01B5/00 ,  B05D5/12 ,  B05D1/04 ,  B44C1/22 ,  C25D13/12

CPC分类号： C23C18/1882 ,  C23C18/1608 ,  C23C18/1685 ,  C23C18/1689 ,  H01L21/31116 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure generally describes methods for forming nanowires on a substrate, where carbon nanotubes may be placed in a pattern on a surface of a substrate. The surface of the substrate may be exposed to conditions such that carbothermal reduction occurs between the carbon nanotubes and the substrate to form nanotrenches in the pattern, and a conductive material may be deposited into the nanotrenches for forming nanowires.

摘要翻译： 本公开一般描述了在衬底上形成纳米线的方法，其中碳纳米管可以以衬底的表面上的图案放置。 衬底的表面可以暴露于在碳纳米管和衬底之间发生碳热还原以形成图案中的纳米管的条件下，并且可以将导电材料沉积到用于形成纳米线的纳米管中。

公开(公告)号：US07713340B2

公开(公告)日：2010-05-11

申请号：US10586379

申请日：2004-11-11

申请人： Toshifumi Kawamura ,  Jun Suzuki ,  Toru Imori

发明人： Toshifumi Kawamura ,  Jun Suzuki ,  Toru Imori

IPC分类号： C23C18/28

CPC分类号： C23C18/31 ,  C23C18/1651 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/2066 ,  C23C18/30

摘要： The object of the present invention is to provide a pretreating agent for electroless plating that is stable and soluble in organic solvents, a method of electroless plating with excellent adhesiveness using it and an electroless plated product. An object to be plated is pre-treated using a pretreating agent for electroless plating comprising a noble metal soap of naphthenic acid or a fatty acid having 5 to 25 carbon atoms or preferably using a pretreating agent for electroless plating additionally comprising an imidazole silane coupling agent or other silane coupling agent having metal capturing ability, and then electroless plated. The noble metal soap is preferably a palladium soap.

摘要翻译： 本发明的目的是提供一种稳定且可溶于有机溶剂的化学镀的预处理剂，使用它的具有优异粘合性的无电电镀方法和无电镀产品。 使用包含环烷酸的贵金属皂或碳原子数5〜25的脂肪酸的贵金属皂进行化学镀的预处理剂进行预镀处理，优选使用还含有咪唑硅烷偶联剂的化学镀的预处理剂 或具有金属捕获能力的其它硅烷偶联剂，然后进行无电镀。 贵金属皂优选为钯皂。

公开(公告)号：US20090301894A1

公开(公告)日：2009-12-10

申请号：US12135881

申请日：2008-06-09

申请人： Carsten Ehlers ,  Harald Bloess

发明人： Carsten Ehlers ,  Harald Bloess

IPC分类号： C25D5/10 ,  C25D9/02

CPC分类号： C25D11/022 ,  C23C18/1605 ,  C23C18/165 ,  C23C18/1687 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/31 ,  C25D3/665 ,  C25D5/022 ,  C25D5/10 ,  C25D7/123 ,  C25D11/04 ,  H01L21/28079 ,  H01L21/28229 ,  H01L28/65 ,  H01L29/517 ,  H01L29/66181

摘要： A method of fabricating an integrated circuit comprising providing a substrate, forming a first layer on the substrate by electrochemical deposition using an electrolyte solution, and converting at least a portion of the first layer into a second layer by electrochemical oxidation using an electrolyte solution, the second layer being an oxide layer.

摘要翻译： 一种制造集成电路的方法，包括提供基板，通过使用电解质溶液的电化学沉积在基板上形成第一层，并且通过使用电解质溶液的电化学氧化将第一层的至少一部分转化为第二层， 第二层是氧化物层。

公开(公告)号：US20090277672A1

公开(公告)日：2009-11-12

申请号：US12297292

申请日：2007-04-10

申请人： Kazuhiko Matsumoto

发明人： Kazuhiko Matsumoto

IPC分类号： H05K1/09 ,  B32B3/10 ,  C25D5/02

CPC分类号： H05K3/108 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/1882 ,  C23C18/2066 ,  C23C18/30 ,  C23C18/44 ,  C25D5/022 ,  C25D5/48 ,  C25D7/123 ,  H05K3/181 ,  H05K3/387 ,  H05K2203/1168 ,  H05K2203/1173 ,  H05K2203/121 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T428/24917

摘要： The present invention provides a method for forming a metal pattern comprising a step of forming a polymer layer on a substrate; (a2) a step of applying a metal ion or the like to the polymer layer; (a3) a step of forming a conductive layer by reducing the metal ion or the like; (a4) a step of forming a patterned resist layer on the conductive layer; (a5) a step of forming a metal pattern by electroplating in the regions where the resist layer is not formed; (a6) a step of separating the resist layer; (a7) a step of removing the conductive layer from regions protected by the resist layer; and (a8) a step of performing a hydrophobilizing treatment.

摘要翻译： 本发明提供一种形成金属图案的方法，包括在基底上形成聚合物层的步骤; （a2）向聚合物层施加金属离子等的工序; （a3）通过还原金属离子等形成导电层的步骤; （a4）在导电层上形成图案化的抗蚀剂层的步骤; （a5）在未形成抗蚀剂层的区域中通过电镀形成金属图案的步骤; （a6）分离抗蚀剂层的步骤; （a7）从由抗蚀剂层保护的区域去除导电层的步骤; 和（a8）进行疏水化处理的工序。

公开(公告)号：US20090095507A1

公开(公告)日：2009-04-16

申请号：US10599214

申请日：2005-03-22

申请人： Christophe Bureau ,  Sami Ameur

发明人： Christophe Bureau ,  Sami Ameur

IPC分类号： H05K3/10 ,  H05K1/00 ,  B05D5/12 ,  H01L21/44

CPC分类号： C23C18/1844 ,  C23C18/1608 ,  C23C18/1834 ,  C23C18/1882 ,  C23C18/1893 ,  C23C18/30 ,  C23C18/31 ,  C23C18/32 ,  H01L21/76849 ,  H01L21/76874 ,  Y10T29/49155

摘要： The present invention relates to a process for selectively coating certain areas of a composite surface with a conductive film, to a process for fabricating interconnects in microelectronics, and to processes and methods for fabricating integrated circuits, and more particularly to the formation of networks of metal interconnects, and also to processes and methods for fabricating microsystems and connectors.

摘要翻译： 本发明涉及用导电膜选择性地涂覆复合表面的某些区域的方法，以及用于制造微电子学中的互连的工艺，以及用于制造集成电路的工艺和方法，更具体地涉及形成金属网络 互连，以及制造微系统和连接器的过程和方法。