Abstract:
An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer.
Abstract:
The invention relates to a cathode arrangement comprising: a cathode body housing an emission surface for emitting electrons in a longitudinal direction, wherein the emission surface is bounded by an emission perimeter; a focusing electrode at least partially enclosing the cathode body in a transversal direction and comprising an electron transmission aperture for focusing the electrons emitted by the emission surface, wherein the aperture is bounded by an aperture perimeter, wherein the cathode body is moveably arranged within the focusing electrode over a maximum transversal distance from an aligned position, and wherein the aperture perimeter transversally extends over the emission surface and beyond the emission perimeter over an overlap distance that exceeds the maximum transversal distance.
Abstract:
An electron gun cathode (104) is column shaped, and emits electrons by being heated. A holder (103), which covers the bottom and sides of the electron gun cathode, has electrical conductivity and holds the electron gun cathode, and is composed of a material that does not easily react with the electron gun cathode when in a heated state, is provided. The tip of the electron gun cathode (104) protrudes from the holder (103) so as to be exposed, and electrons are emitted from the tip toward the front by applying an electric field to the tip.
Abstract:
An inspection apparatus includes: beam generation means for generating any of charged particles and electromagnetic waves as a beam; a primary optical system that guides the beam into an inspection object held in a working chamber and irradiates the inspection object with the beam; a secondary optical system that detects secondary charged particles occurring from the inspection object; and an image processing system that forms an image on the basis of the detected secondary charged particles. The primary optical system includes a photoelectron generator having a photoelectronic surface. The base material of the photoelectronic surface is made of material having a higher thermal conductivity than the thermal conductivity of quartz.
Abstract:
An inspection apparatus includes: beam generation means for generating any of charged particles and electromagnetic waves as a beam; a primary optical system that guides the beam into an inspection object held in a working chamber and irradiates the inspection object with the beam; a secondary optical system that detects secondary charged particles occurring from the inspection object; and an image processing system that forms an image on the basis of the detected secondary charged particles. The primary optical system includes a photoelectron generator having a photoelectronic surface. The base material of the photoelectronic surface is made of material having a higher thermal conductivity than the thermal conductivity of quartz.
Abstract:
The invention relates to a device for producing an electron beam, comprising a housing (12), which delimits a space (13) that can be evacuated and has an electron beam outlet opening; an inlet (16) for feeding a process gas into the space (13) that can be evacuated; a planar cathode (14) and an anode (15), which are arranged in the space (13) that can be evacuated and between which a glow-discharge plasma can be produced by means of an applied electrical voltage, wherein ions can be accelerated from the glow-discharge plasma onto the surface of the cathode (14). The cathode has a first part (14a) made of a first material, which forms a centrally arranged first surface region of the cathode (14), and a second part (14b) made of a second material, which forms a second surface region of the cathode (14) that encloses the first surface region. The first material can be heated by the impingement with accelerated ions to a temperature at which electrons escape the first material predominantly due to thermionic emission.
Abstract:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
Abstract:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
Abstract:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
Abstract:
A voltage regulator circuit for an electron microscope incorporates step-down and step-up transformers connected between the filament supply and the filament of a regulator triode. The triode has a cathode separate from the filament, the cathode being connected to the center-tapped primary of the step-up transformer. A magnification-reducing resistor may be connected across the grid and cathode of the triode.