公开(公告)号：US09741543B2

公开(公告)日：2017-08-22

申请号：US14336355

申请日：2014-07-21

Applicant: Lam Research Corporation

Inventor： Gary M. Lemson

IPC: G01R27/26 ,  H01J37/32 ,  G01R15/26 ,  G01R15/04 ,  G01R19/00

CPC classification number: H01J37/32183 ,  G01R15/04 ,  G01R15/26 ,  G01R19/0084 ,  H01J37/32155 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/332 ,  H01J2237/334

Abstract: A voltage sensor for a voltage controlled interface of a plasma processing system. The voltage sensor receives a RF signal generated by a pickup device. The RF signal is indicative of a RF voltage provided at a substrate in a plasma chamber. The voltage sensor includes first and second dividers corresponding to first and second channels and having first and second capacitance ratios. The dividers receive the RF signal and respectively generate first and second reduced voltage signals. A first output of the first channel outputs a first output signal based on the first reduced voltage signal and while the RF signal is in a first voltage range. A second output of the second channel outputs a second output signal based on the second reduced voltage signal and while the RF signal is in a second voltage range.

公开(公告)号：US20170194157A1

公开(公告)日：2017-07-06

申请号：US15248205

申请日：2016-08-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Tomoyuki TAMURA ,  Kazuyuki IKENAGA

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/6833

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

公开(公告)号：US20170186589A1

公开(公告)日：2017-06-29

申请号：US15461630

申请日：2017-03-17

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yosuke SATO ,  Akio UI ,  Hisataka HAYASHI

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32577 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32706 ,  H01J37/32715 ,  H01J2237/20214 ,  H01J2237/3341 ,  H01L21/3065

Abstract: A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.

公开(公告)号：US09552962B2

公开(公告)日：2017-01-24

申请号：US14349501

申请日：2012-10-04

Applicant: ION BEAM SERVICES

Inventor： Frank Torregrosa ,  Laurent Roux

IPC: H01J37/32 ,  H01J37/317 ,  C23C14/48 ,  H01L21/223

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/32009 ,  H01J37/32146 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32706 ,  H01L21/2236

Abstract: The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising: an electricity generator; a first switch SW1 connected between the generator and the output terminal of the substrate power supply; and a second switch SW2 connected between the output terminal and a neutralization terminal; the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP.

Abstract translation: 本发明涉及一种控制具有等离子体电源AP和基板电源的离子注入机的方法，所述基板电源包括：发电机; 连接在发电机和基板电源的输出端子之间的第一开关SW1; 以及连接在输出端子和中和端子之间的第二开关SW2; 该方法包括注入阶段A-D和中和阶段E-H。 该方法还包括与植入阶段和中和阶段重叠的松弛阶段C-F，在此期间等离子体电源的松弛阶段失活。 此外，中和阶段包括用于关闭第二开关的初步步骤E-F，该初步步骤之后是用于激活等离子体电源AP的取消步骤F-G。

公开(公告)号：US09530626B2

公开(公告)日：2016-12-27

申请号：US14807319

申请日：2015-07-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jason Marion ,  Sonam Sherpa ,  Sergey A. Voronin ,  Alok Ranjan ,  Yoshio Ishikawa ,  Takashi Enomoto

IPC: C03C15/00 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32697 ,  H01J37/32422 ,  H01J37/32706 ,  H01J37/32715 ,  H01L21/6833

Abstract: A plasma processing method and apparatus are provided in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an example, the voltage is applied to the ESC after the processing plasma is struck, however the voltage is ramped or increased in a step-wise manner to achieve the desired final ESC voltage. In an alternate embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing the wafer. By reducing current spikes associated with application of the voltage to the ESC during the presence of the processing plasma, transfer or deposition of particles on the wafer can be reduced.

Abstract translation: 提供了一种等离子体处理方法和装置，其中当存在处理等离子体时，使与静电卡盘（ESC）的电压施加相关联的电流尖峰被最小化或减小。 根据一个例子，在处理等离子体被击打之后，电压被施加到ESC，然而电压以逐步方式倾斜或增加以达到期望的最终ESC电压。 在替代实施例中，ESC电压至少部分地施加在等离子体撞击之前用于处理晶片。 通过在处理等离子体的存在期间减少与电压施加相关联的电流尖峰，可以减少颗粒在晶片上的转移或沉积。

公开(公告)号：US09520531B2

公开(公告)日：2016-12-13

申请号：US13954099

申请日：2013-07-30

Applicant: Amtech Systems, Inc.

Inventor： Jeong-Mo Hwang

IPC: H01L31/18 ,  H01J37/32 ,  H01L31/0216 ,  H01L31/068

CPC classification number: H01L31/1868 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32706 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g., wafer) with a positive or negative charge. The layer may retain the charge to improve operation of the solar cell. The charged layer may include any suitable dielectric material capable of retaining either a negative or a positive charge. Systems and methods of the present invention permit in-situ charging of a layer. Charging of a layer may be accomplished during or after deposition of the layer including after completing the whole solar cell process, in other words, on a finished cell.

Abstract translation: 本发明的系统和方法可以用于以正电荷或负电荷对太阳能电池（例如，晶片）的层（例如钝化层和/或抗反射层）进行充电。 该层可以保持电荷以改善太阳能电池的运行。 带电层可以包括能够保持负电荷或正电荷的任何合适的电介质材料。 本发明的系统和方法允许层的原位充电。 可以在层的沉积期间或之后完成层的充电，包括在完成整个太阳能电池处理之后，换句话说，在成品电池上。

公开(公告)号：US09520267B2

公开(公告)日：2016-12-13

申请号：US14467806

申请日：2014-08-25

Applicant: Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

Inventor： Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

IPC: H01J37/317 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01J37/3172 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32706 ,  H01L21/3065

Abstract: The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.

Abstract translation: 使用偏置电压频率来控制等离子体处理中的角度离子分布。 在一个实例中，在等离子体室中产生含有气体离子的等离子体。 使用设置在等离子体护套和工件之间的孔来改变等离子体护套，使得等离子体护套在孔的上方具有形状。 产生振荡射频偏置电压并将其施加到工件保持器。 工件保持器将偏置电压施加到工件以产生相对于等离子体的工件偏置电压，以将等离子体护套上的离子吸引到工件。 偏压的孔径和频率控制离子被吸引到工件的角度。

公开(公告)号：US09490107B2

公开(公告)日：2016-11-08

申请号：US14699266

申请日：2015-04-29

Applicant: Moojin Kim ,  Bongseong Kim ,  DeogJa Koo ,  Je-Hun Woo ,  Unjoo Lee

Inventor： Moojin Kim ,  Bongseong Kim ,  DeogJa Koo ,  Je-Hun Woo ,  Unjoo Lee

IPC: H01J37/30 ,  H05H1/26 ,  H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32706

Abstract: A plasma apparatus includes a process chamber having an inner space, a chuck disposed in the process chamber and having a top surface on which a substrate is loaded, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit generating plasma over the chuck, and a direct current (DC) power generator applying a DC pulse signal to the chuck. A period of the DC pulse signal may include a negative pulse duration during which a negative pulse is applied, a positive pulse duration during which a positive pulse is applied, and a pulse-off duration during which the negative pulse and the positive pulse are turned off. The positive pulse duration is between the negative pulse duration and the pulse-off duration. The pulse-off duration may comprise a voltage having a lower magnitude than the voltage of the positive pulse, such as a ground voltage.

Abstract translation: 一种等离子体装置，包括具有内部空间的处理室，设置在处理室中的卡盘，并具有顶面，载置基板的气体供应单元，将处理气体供应到处理室中;等离子体产生单元，其产生等离子体 以及直流（DC）发电机对卡盘施加DC脉冲信号。 DC脉冲信号的周期可以包括施加负脉冲的负脉冲持续时间，施加正脉冲的正脉冲持续时间以及负脉冲和正脉冲被转向的脉冲关闭持续时间 关闭 正脉冲持续时间在负脉冲持续时间和脉冲关闭持续时间之间。 脉冲关闭持续时间可以包括具有比正脉冲的电压更低的电压的电压，例如接地电压。

公开(公告)号：US09362131B2

公开(公告)日：2016-06-07

申请号：US14505168

申请日：2014-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Ankur Agarwal ,  Shahid Rauf ,  Kartik Ramaswamy

IPC: H01L21/3065 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  B81C1/00

CPC classification number: H01L21/30655 ,  B81C1/00531 ,  H01J37/32357 ,  H01J37/32706 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32135

Abstract: An etch process gas is provided to a main process chamber having an electron beam plasma source, and during periodic passivation operations a remote plasma source provides passivation species to the main process chamber while ion energy is limited below an etch ion energy threshold. During periodic etch operations, flow from the remote plasma source is halted and ion energy is set above the etch threshold.

Abstract translation: 将蚀刻工艺气体提供给具有电子束等离子体源的主处理室，并且在周期性钝化操作期间，远程等离子体源向主处理室提供钝化物质，同时将离子能量限制在蚀刻离子能量阈值以下。 在周期性蚀刻操作期间，停止来自远程等离子体源的流动并将离子能量设定在蚀刻阈值以上。

公开(公告)号：US20160141183A1

公开(公告)日：2016-05-19

申请号：US15003706

申请日：2016-01-21

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masahito MORI ,  Masaru IZAWA ,  Katsushi YAGI

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32706 ,  H03H7/40 ,  H05H2001/4682

Abstract: There is provided dry etching apparatus including a stage on which a wafer is placed, an antenna electrode, a high frequency power supply, a shower plate, and an RF bias power supply. Further, a bias path controller is provided on the side of the antenna electrode. The bias path controller resonates in series with the static reactance formed by the shower plate with respect to the frequency of the RF bias. Then, the bias path controller changes and grounds the impedance by the variable inductive reactance. With this mechanism, highly uniform etching can be achieved even if a shower plate of quartz is used for corrosive gases.