公开(公告)号：US11644178B2

公开(公告)日：2023-05-09

申请号：US17082912

申请日：2020-10-28

申请人： NICHIA CORPORATION

发明人： Soichiro Miura

IPC分类号： F21V13/00 ,  F21V5/04 ,  F21V7/00 ,  F21V13/04 ,  H01S5/00 ,  H01S5/40 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/02255 ,  H01S5/02315 ,  F21Y115/30

CPC分类号： F21V5/04 ,  F21V5/045 ,  F21V7/0066 ,  F21V13/04 ,  H01S5/005 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/02255 ,  H01S5/02315 ,  H01S5/4093 ,  F21Y2115/30

摘要： A light emitting device includes a base, a first light emitting element and a first light reflecting member disposed on the base and a lens member. The first light reflecting member is positioned with respect to the first light emitting element so that emitted light from the first light emitting element is divided into a portion of the emitted light from the first light emitting element irradiating onto the light reflecting face and a portion of the emitted light from the first light emitting element traveling outside of the light reflecting face by having an edge of the light reflecting face serve as a boundary. The lens member includes a reflected light passing region having a first lens shape configured to control the travelling direction of reflected light, and a non-reflected light passing region having a second lens shape configured to control a travelling direction of non-reflected light.

公开(公告)号：US12126138B2

公开(公告)日：2024-10-22

申请号：US17214580

申请日：2021-03-26

申请人： Lumentum Japan, Inc.

发明人： Hayato Takita ,  Atsushi Nakamura ,  Shunya Yamauchi ,  Hideaki Asakura

IPC分类号： H01S5/227 ,  H01S5/02315 ,  H01S5/02345 ,  H01S5/0239 ,  H01S5/026 ,  H01S5/042 ,  H01S5/12 ,  H01S5/22

CPC分类号： H01S5/227 ,  H01S5/02315 ,  H01S5/02345 ,  H01S5/0239 ,  H01S5/0265 ,  H01S5/04256 ,  H01S5/12 ,  H01S5/2224 ,  H01S2301/176

摘要： An optical semiconductor device includes a semiconductor substrate with a protrusion that forms a lower end portion of a mesa stripe structure in a stripe shape extending in a first direction; a multi-quantum well layer in a stripe shape extending in the first direction on the protrusion, wherein the multi-quantum well layer forms an intermediate portion of the mesa stripe structure; a semiconductor layer in a stripe shape extending in the first direction on the intermediate portion, wherein the semiconductor layer forms an upper end portion of the mesa stripe structure; and a semi-insulating semiconductor layer in contact with side surfaces of the mesa stripe structure on both sides in a second direction perpendicular to the first direction. The optical semiconductor device may include a first electrode on a surface of the semiconductor substrate and/or a second electrode on the upper end surface of the mesa stripe structure.

公开(公告)号：US12095223B1

公开(公告)日：2024-09-17

申请号：US18605578

申请日：2024-03-14

申请人： Lijian Sun

发明人： Lijian Sun

IPC分类号： H01S5/023 ,  H01S5/02255 ,  H01S5/02315 ,  H01S5/02345 ,  H01S5/042

CPC分类号： H01S5/023 ,  H01S5/02255 ,  H01S5/02315 ,  H01S5/02345 ,  H01S5/042 ,  H01S5/04254

摘要： This application provides a laser device with an edge emitting source surface-mounted for emission and an electronic device. The laser device includes parts involved in the following: A bottom plate of a housing covers a bottom end of a housing body, and the bottom plate includes a first conductive region and a second conductive region apart from each other. An inner cavity of the housing body and the bottom plate form a mounting cavity with a light outlet opposite the bottom plate, and the mounting cavity is provided in a light source assembly. A side surface of the light source chip facing the light outlet is a light-emitting surface, and light is projected from the front of the light outlet. The technical solution provided by this application is to attach an edge emitting source chip onto the mounting side surface of the support member, so as to achieve frontward projecting.

公开(公告)号：US12080990B2

公开(公告)日：2024-09-03

申请号：US17289671

申请日：2019-11-20

申请人： ROHM CO., LTD.

发明人： Atsushi Yamaguchi ,  Koki Sakamoto

IPC分类号： H01S5/02345 ,  H01S5/02315 ,  H01S5/042 ,  H01S5/06

CPC分类号： H01S5/02345 ,  H01S5/02315 ,  H01S5/042 ,  H01S5/0608

摘要： Semiconductor laser device A1 includes semiconductor laser element 4, switching element 5 having gate electrode 52, source electrode 53 and drain electrode 54, and support member 1 having conductive part 3 that forms a conduction path to switching element 5 and semiconductor laser element 4 and supports semiconductor laser element 4 and switching element 5. Conductive part 3 has front surface first section 311 spaced apart from semiconductor laser element 4. Semiconductor laser device A1 includes at least one first wire 71 connected to source electrode 53 of switching element 5 and semiconductor laser element 4 and also at least one second wire 72 connected to source electrode 53 of switching element 5 and front surface first section 311 of conductive part 3. Such an arrangement reduces the inductance component of semiconductor laser device A1.

公开(公告)号：US12040592B2

公开(公告)日：2024-07-16

申请号：US17445786

申请日：2021-08-24

申请人： Lumentum Operations LLC

发明人： Wei Shi ,  Hao Huang ,  Siu Kwan Cheung ,  Huanlin Zhu ,  Lijun Zhu

IPC分类号： H01S5/024 ,  H01L23/373 ,  H01L23/498 ,  H01S5/02315 ,  H01S5/183

CPC分类号： H01S5/02469 ,  H01L23/3735 ,  H01L23/49827 ,  H01L23/49833 ,  H01S5/02315 ,  H01S5/183

摘要： A substrate may include a thermally conductive metal core having a top side and a bottom side, a first dielectric coating on the top side of the metal core, a second dielectric coating on the bottom side of the metal core, a first metal circuit layer formed above the first dielectric coating, and a second metal circuit layer formed under the second dielectric coating. In some implementations, the first dielectric coating and the second dielectric coating have thicknesses below sixty micrometers and respective thermal resistances under fifteen degrees Celsius per watt. In some implementations, one or more electrical currents flowing vertically across a dielectric coating have a low parasitic inductance based on the thickness of the dielectric coating, and the metal core may dissipate heat flowing across the dielectric coating and into the metal core.

公开(公告)号：US20240128710A1

公开(公告)日：2024-04-18

申请号：US18487043

申请日：2023-10-14

申请人： NICHIA CORPORATION

发明人： Yoshihiro KIMURA ,  Tadaaki MIYATA

IPC分类号： H01S5/02345 ,  H01S5/02315 ,  H01S5/42

CPC分类号： H01S5/02345 ,  H01S5/02315 ,  H01S5/423 ,  H01S5/18361

摘要： A light-emitting device includes a substrate, a base disposed on the substrate, a light-emitting element disposed over the base, a frame body, and at least one of a functional element and a wire. The frame body includes an inner wall surface surrounding the base and the light-emitting element, an upper surface, and a lower surface connected to the substrate. At least one of the functional element and the wire is disposed on the substrate. At least a part of the at least one of the functional element and the wire is disposed below the light-emitting element. The inner wall surface includes an inclined surface that is inclined so that a distance between the inclined surface and the light-emitting element increases from an upper surface side toward a lower surface side. The at least one of the functional element and the wire is disposed between the inclined surface and the base.

公开(公告)号：US20240047937A1

公开(公告)日：2024-02-08

申请号：US18364443

申请日：2023-08-02

申请人： NICHIA CORPORATION

发明人： Soichiro MIURA

IPC分类号： H01S5/02315 ,  H01S5/00 ,  H01S5/02253

CPC分类号： H01S5/02315 ,  H01S5/0014 ,  H01S5/02253

摘要： A light-emitting device includes a light-emitting element, a substrate supporting the light-emitting element, and one or more lateral wall portions joined to the substrate to surround the light-emitting element. The one or more lateral wall portions includes a first lateral wall portion having a light incident surface configured to receive a light emitted from the light-emitting element and traveling in a first direction and a light exit surface configured to emit the light. The substrate has a joint surface joined to the first lateral wall portion and a lateral surface meeting the joint surface. The lateral surface is located between the light incident surface and the light exit surface in a top view as viewed in a direction perpendicular to the joint surface.

公开(公告)号：US20240030678A1

公开(公告)日：2024-01-25

申请号：US18033623

申请日：2021-07-15

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Nobutaka SUZUKI ,  Naota AKIKUSA ,  Tadataka EDAMURA

IPC分类号： H01S5/024 ,  H01S5/34 ,  H01S5/02315

CPC分类号： H01S5/02423 ,  H01S5/3401 ,  H01S5/02315

摘要： In a semiconductor laser device, a supply path that guides a cooling fluid supplied from a supply port side, toward a disposition region, spray holes that spray the cooling fluid guided by the supply path, from below the disposition region, and a discharge path that guides the cooling fluid sprayed from the spray holes, toward a discharge port are provided within a body portion of a heat sink. The spray holes are disposed along a resonance direction of a semiconductor laser element disposed in the disposition region, and the discharge path extends in a direction intersecting with the resonance direction of the semiconductor laser element disposed in the disposition region.

公开(公告)号：US20240014634A1

公开(公告)日：2024-01-11

申请号：US18254501

申请日：2020-11-27

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01S5/20 ,  H01S5/40 ,  H01S5/02315 ,  H01S5/042 ,  H01S5/02 ,  H01S5/343

CPC分类号： H01S5/2077 ,  H01S5/4031 ,  H01S5/02315 ,  H01S5/04256 ,  H01S5/0217 ,  H01S5/34333

摘要： A GaN-based laser and a manufacturing method thereof are provided in this present disclosure. The GaN-based laser includes: an epitaxial substrate unit; and a light-emitting unit located on the epitaxial substrate unit, where the light-emitting unit includes an active layer unit, which is arranged parallel to the epitaxial substrate unit; the light emitting unit includes a pair of first sidewall and second sidewall, which are opposite to each other; a first reflector is provided on the first sidewall and a second reflector is provided on the second sidewall, and the first reflector or second reflector corresponds to the light emitting surface. The first reflector and the second reflector are arranged on the side surfaces of the active layer unit.

公开(公告)号：US20240014628A1

公开(公告)日：2024-01-11

申请号：US18245185

申请日：2021-08-30

申请人： ams-OSRAM International GmbH

发明人： Zeljko Pajkic ,  Markus Boss ,  Michael Müller

IPC分类号： H01S5/02315 ,  H01S5/02257 ,  H01S5/068

CPC分类号： H01S5/02315 ,  H01S5/02257 ,  H01S5/06825 ,  H01S5/183

摘要： In a method of manufacturing a package, in particular an injection molded circuit carrier, MID, at least one injection molded cover plate forming a cavity is provided having a cover area and a perimeter defining the cover area; wherein the cover area includes an opening. Two conductive traces having a first portion on a top edge of the surround, a second portion on a side surface of the surround, and a third portion on the cover area are formed, and then an optical element is formed in the opening of the cover area. Finally, a loop-shaped interlock circuit is applied to the optical element in an edge portion between the opening and the cover area, wherein one end of the loop-shaped interlock circuit is connected to each of the first and second conductive paths.