公开(公告)号：US12040155B2

公开(公告)日：2024-07-16

申请号：US17472444

申请日：2021-09-10

申请人： Kioxia Corporation

发明人： Junichi Hashimoto ,  Toshiyuki Sasaki

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/48 ,  C23C16/52 ,  H01J37/147 ,  H01J37/32 ,  H01L21/02 ,  H01L21/263 ,  H01L21/768 ,  H10B43/50 ,  H10B43/27

CPC分类号： H01J37/1474 ,  C23C16/047 ,  C23C16/402 ,  C23C16/486 ,  C23C16/52 ,  H01J37/3233 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/2633 ,  H01L21/76819 ,  H10B43/50 ,  H01J2237/334 ,  H10B43/27

摘要： A method of manufacturing a semiconductor device includes: preparing a stepped structure being arranged on a substrate, the stepped structure including a first region and a second region, a height of the stepped structure of the second region being lower than a height of the stepped structure of the first region; and etching the first region and the second region of the stepped structure by irradiating the first region and the second region with an ion beam, an irradiation amount of the ion beam irradiating the first region is larger than an irradiation amount of the ion beam irradiating the second region.

公开(公告)号：US11996267B2

公开(公告)日：2024-05-28

申请号：US17271667

申请日：2019-08-22

申请人： ASML NETHERLANDS B.V.

发明人： Ruben Cornelis Maas ,  Alexey Olegovich Polyakov ,  Teis Johan Coenen

IPC分类号： H01J37/304 ,  G03F7/00 ,  H01J37/147 ,  H01J37/302 ,  H01J37/317 ,  H01L21/263

CPC分类号： H01J37/304 ,  G03F7/70591 ,  H01J37/1474 ,  H01J37/3023 ,  H01J37/3174 ,  H01L21/263 ,  H01J2237/31755

摘要： A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.

公开(公告)号：US20240153732A1

公开(公告)日：2024-05-09

申请号：US18281272

申请日：2022-02-09

申请人： ASML Netherlands B.V.

发明人： Datong ZHANG ,  Chih-hung WANG ,  Oliver Desmond PATTERSON ,  Xiaohu TANG

IPC分类号： H01J37/147 ,  H01J37/26

CPC分类号： H01J37/1474 ,  H01J37/263 ,  H01J37/265 ,  H01J2237/0048 ,  H01J2237/24592

摘要： Apparatuses, systems, and methods for providing beams for using deflector control to control charging on a sample surface of charged particle beam systems. In some embodiments, a controller including circuitry configured to scan a plurality of nodes of the sample to charge the plurality of nodes; adjust a scan rate of a beam such that a quantity of charge deposited on each node of the plurality of nodes varies with respect to at least one other node; generate a plurality of images; and compare the plurality of images to enable detection of a defect associated with any of the plurality of nodes of the sample.

公开(公告)号：US11961708B2

公开(公告)日：2024-04-16

申请号：US17236007

申请日：2021-04-21

申请人： NuFlare Technology, Inc.

发明人： Haruyuki Nomura ,  Noriaki Nakayamada

IPC分类号： H01J37/00 ,  G03F7/00 ,  H01J37/12 ,  H01J37/147 ,  H01J37/153 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

CPC分类号： H01J37/3174 ,  G03F7/70008 ,  G03F7/70558 ,  H01J37/12 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/3026 ,  H01L21/0274 ,  H01J2237/20228 ,  H01J2237/31761

摘要： Position shifts caused by charging phenomena can be corrected with high accuracy. A charged particle beam writing apparatus includes an exposure-amount distribution calculator calculating an exposure amount distribution of a charged particle beam using a pattern density distribution and a dose distribution, a fogging charged particle amount distribution calculator calculating a plurality of fogging charged particle amount distributions by convoluting each of a plurality of distribution functions for fogging charged particles with the exposure amount distribution, a charge-amount distribution calculator calculating a charge amount distribution due to direct charge using the pattern density distribution, the dose distribution, and the exposure amount distribution, and calculating a plurality of charge amount distributions due to fogging charge using the plurality of fogging charged particle amount distributions, a position shift amount calculator calculating a position shift amount of a writing position based on the charge amount distribution due to direct charge and the plurality of charge amount distributions due to fogging charge, a corrector correcting an exposure position using the position shift amount, and a writer exposing the corrected exposure position to a charged particle beam.

公开(公告)号：US20240096592A1

公开(公告)日：2024-03-21

申请号：US17945338

申请日：2022-09-15

申请人： APPLIED MATERIALS ISRAEL LTD.

发明人： Yehuda Zur

IPC分类号： H01J37/317 ,  C23C14/22 ,  H01J37/147

CPC分类号： H01J37/3178 ,  C23C14/221 ,  H01J37/1474 ,  H01J2237/006 ,  H01L21/28568

摘要： A gas injection nozzle that includes an elongated gas conduit that comprises: a first gas conduit segment configured to be coupled with a gas reservoir; a second gas conduit segment fluidly coupled to the first gas conduit segment and defining a downward curve of the elongated gas conduit; a third gas conduit segment defining an upward curve of the elongated gas conduit that extends to a sealed end and is disposed in a mirrored relationship with at least a portion of the second gas conduit; and a central gas conduit segment coupled between the second and third gas conduit segments, the central gas conduit segment having a first aperture formed in an upper surface of the central gas conduit and a second aperture, larger than the first aperture, formed in a lower surface of the central gas conduit directly across from the first aperture, wherein the elongated gas conduit has a first diameter along a portion of its length that includes at least the second, third and central gas conduit segments and wherein the central gas conduit segment includes a substantially horizontal portion that extends on each side of the first and second apertures for a distance that is at least twice the first diameter of the gas conduit.

公开(公告)号：US20240096585A1

公开(公告)日：2024-03-21

申请号：US17768802

申请日：2020-10-20

申请人： Technische Universiteit Delft ,  Applied Materials Israel, Ltd.

发明人： Pieter KRUIT

IPC分类号： H01J37/147 ,  H01J37/10

CPC分类号： H01J37/147 ,  H01J37/10

摘要： Disclosed are an apparatus and method for generating a plurality of substantially collimated charged particle beamlets. The apparatus includes a charged particle source for generating a diverging charged particle beam, a beam splitter for splitting the charged particle beam in an array of charged particle beamlets, a deflector array includes an array of deflectors including one deflector for each charged particle beamlet of said array of charged particle beamlets, wherein the deflector array is configured for substantially collimating the array of diverging charged particle beamlets. The apparatus further includes a beam manipulation device configured for generating electric and/or magnetic fields at least in an area between the charged particle source and the deflector array. The apparatus has a central axis, and the beam manipulation device is configured for generating electric and/or magnetic fields substantially parallel to the central axis and substantially perpendicular to the central axis.

公开(公告)号：US20240055218A1

公开(公告)日：2024-02-15

申请号：US18259674

申请日：2021-12-09

申请人： NuFlare Technology, Inc. ,  NuFlare Technology America, Inc.

发明人： Yasuo SENGOKU ,  Yoshikuni GOSHIMA ,  John William KAY ,  Chising LAI

IPC分类号： H01J37/147 ,  H01J37/30 ,  H01J37/04 ,  H01J37/317

CPC分类号： H01J37/147 ,  H01J37/3007 ,  H01J37/045 ,  H01J37/3174

摘要： A charged particle beam writing apparatus according to one aspect of the present invention includes an electrode configured to deflect a charged particle beam, an amplifier configured to apply a deflection potential to the electrode, a diagnostic circuit configured to diagnose the amplifier, a switching circuit arranged between an output of the amplifier and the electrode, and configured to switch the output of the amplifier between the electrode and the diagnostic circuit, an electron optical system configured to irradiate a target object with the charged particle beam deflected by being applied with the deflection potential by the amplifier, a column configured to include therein the electrode and the electron optical system, a first coaxial cable configured to connect an output side of the amplifier with the switching circuit, a second coaxial cable configured to connect the electrode with the switching circuit, a third coaxial cable configured to connect the output side of the amplifier with the diagnostic circuit, and a resistance configured to connect, parallelly to the switching circuit, an inner conductor of the first coaxial cable with an inner conductor of the second coaxial cable.

公开(公告)号：US11894213B2

公开(公告)日：2024-02-06

申请号：US17252997

申请日：2018-06-22

申请人： Hitachi High-Tech Corporation

发明人： Asako Kaneko ,  Hisayuki Takasu

IPC分类号： H01J37/20 ,  H01J37/08 ,  H01J37/09 ,  H01J37/147 ,  H01J37/305

CPC分类号： H01J37/20 ,  H01J37/08 ,  H01J37/09 ,  H01J37/1478 ,  H01J37/3053 ,  H01J2237/002 ,  H01J2237/1502 ,  H01J2237/20214

摘要： An ion milling device capable of high-speed milling is realized even for a specimen containing a material having an imide bond. Therefore, the ion milling device includes: a vacuum chamber 6 configured to hold a specimen 3 in a vacuum atmosphere; an ion gun 1 configured to irradiate the specimen with a non-focused ion beam 2; a vaporization container 17 configured to store a mixed solution 13 of a water-soluble ionic liquid and water; and nozzles 11, 12 configured to supply water vapor obtained by vaporizing the mixed solution to a vicinity of a surface of the specimen processed by the ion beam.

公开(公告)号：US11887807B2

公开(公告)日：2024-01-30

申请号：US18158444

申请日：2023-01-23

申请人： ASML Netherlands B.V.

发明人： Weiming Ren ,  Xuedong Liu ,  Xuerang Hu ,  Zhongwei Chen

IPC分类号： H01J37/147 ,  H01J37/06 ,  H01J37/10 ,  H01J37/28

CPC分类号： H01J37/1474 ,  H01J37/06 ,  H01J37/10 ,  H01J37/1477 ,  H01J37/1478 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/0453 ,  H01J2237/0492 ,  H01J2237/103 ,  H01J2237/1205 ,  H01J2237/1516 ,  H01J2237/1534 ,  H01J2237/1536

摘要： A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

公开(公告)号：US20240013999A1

公开(公告)日：2024-01-11

申请号：US18331502

申请日：2023-06-08

申请人： NuFlare Technology, Inc.

发明人： Toshiki KIMURA ,  Hirofumi MORITA ,  Takanao TOUYA ,  Hayato KIMURA ,  Kazuhiro CHIBA

IPC分类号： H01J37/04 ,  H01J37/147 ,  H01J37/304

CPC分类号： H01J37/045 ,  H01J37/147 ,  H01J37/304 ,  H01J2237/0437

摘要： According to one embodiment of the present invention, a mounting substrate is installed on a multi charged particle beam irradiation apparatus, and a blanking aperture array chip provided with blanking electrodes to perform blanking deflection on beams in a multi charged particle beam is mounted on the mounting substrate. The mounting substrate includes an opening through which the multi charged particle beam passes, a plurality of control circuits that supply a control signal to the blanking electrodes for each of a plurality of areas into which the blanking aperture array chip is divided, and grounds, each of which is provided for a corresponding one of the plurality of control circuits and configured to supply a ground electrical potential to the corresponding control circuit. The grounds corresponding to the control circuits are electrically separated from each other.