公开(公告)号：US5770076A

公开(公告)日：1998-06-23

申请号：US482237

申请日：1995-06-07

Applicant: Wen-Hwa Chu ,  Mauro Ferrari

Inventor： Wen-Hwa Chu ,  Mauro Ferrari

IPC: A61F2/02 ,  A61K9/00 ,  A61K9/50 ,  B01D39/16 ,  B01D39/20 ,  B01D67/00 ,  B01D69/02 ,  B01D69/10 ,  B01D69/12 ,  B01D71/02 ,  B01J13/00 ,  B01J13/02 ,  B81B1/00 ,  B81C1/00 ,  C04B41/45 ,  C23C16/01 ,  G03F7/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31 ,  A61K9/52

CPC classification number: A61K9/0097 ,  A61K9/0024 ,  B01D39/1692 ,  B01D39/20 ,  B01D67/003 ,  B01D67/0034 ,  B01D67/0058 ,  B01D67/0062 ,  B01D67/0072 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B01J13/02 ,  B81B3/007 ,  B81C1/00087 ,  C04B41/4582 ,  C23C16/01 ,  G03F7/00 ,  G03F7/0015 ,  B01D2325/04 ,  B81B2201/10 ,  B81C2201/014

Abstract: Surface micromachining and bulk micromachining are employed for realizing a porous membrane with bulk support for a microparticle fiter. The filter is sufficiently sturdy to allow for easy handling. It may be used as a diffusion barrier and under high pressures. The disclosed fabrication method is simple, reliable, and integrated-circuit compatible, and thus amenable to mass production. Electronic circuitry may be integrated on the filter surface, as may be desired for several purposes, such as fluid characterization, filter self-cleaning, or charging of the filter surfaces. Methods are shown for the realization of biological containment capsules based on this microfilter.

Abstract translation: 采用表面微机械加工和体积微加工技术来实现用于微粒子的大量支撑的多孔膜。 过滤器足够坚固以便于处理。 它可以用作扩散屏障并在高压下使用。 所公开的制造方法简单，可靠，并且集成电路兼容，因此适合批量生产。 电子电路可以集成在过滤器表面上，如可能需要多种目的，例如流体表征，过滤器自清洁或过滤表面的充电。 显示了基于该微型过滤器实现生物遏制胶囊的方法。

公开(公告)号：US5437739A

公开(公告)日：1995-08-01

申请号：US229501

申请日：1994-04-19

Applicant: Kenneth M. Hays

Inventor： Kenneth M. Hays

IPC: C23F1/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/306 ,  H03H3/007 ,  H01L21/302

CPC classification number: G01L9/0019 ,  B81C1/00801 ,  H03H3/007 ,  B81C2201/0136 ,  B81C2201/014 ,  Y10S148/012

Abstract: A dissolved wafer micromachining process is modified by providing an etch control seal around the perimeter of a heavily doped micromechanical structure formed on a substrate. The micromechanical structure is fabricated on a wafer using conventional methods including the formation of a trench that surrounds and defines the shape of the micromechanical structure in the substrate. The etch control seal comprises a portion of the substrate in the form of a raised ring extending around the perimeter of the micromechanical structure and its defining trench. Selected raised areas of the heavily doped micromechanical structure and the top of the raised etch control seal are bonded to a second substrate. A selective etch is then used to dissolve the first substrate so that the heavily doped micromechanical structure remains attached to the second substrate only at the bonded areas. The etch control seal reduces exposure of the micromechanical structure and bonded areas to the etch by preventing the etch from contacting the heavily doped structure until the etch leaks through the dissolving floor of the trench. This occurs only during the final stages of the substrate dissolution step, thus minimizing exposure of the micromechanical structure and bonded areas to the damaging effects of the etch. Use of an etch control seal increases design flexibility and improves micromechanical device yield and quality in a dissolved wafer fabrication process.

Abstract translation: 通过在形成在衬底上的重掺杂微机械结构的周边周围提供蚀刻控制密封来修改溶解的晶片微加工工艺。 使用常规方法在晶片上制造微机械结构，包括形成围绕并限定衬底中的微机械结构的形状的沟槽。 蚀刻控制密封件包括呈微环形结构周边延伸的凸起形状的衬底的一部分及其限定沟槽。 重掺杂的微机械结构的选定凸起区域和凸起的蚀刻控制密封件的顶部被结合到第二衬底。 然后使用选择性蚀刻来溶解第一衬底，使得重掺杂的微机械结构仅在接合区域处保持附着到第二衬底。 蚀刻控制密封件通过防止蚀刻与重掺杂结构接触直到蚀刻泄漏通过沟槽的溶解底板来减少微机械结构和结合区域对蚀刻的暴露。 这仅发生在底物溶解步骤的最后阶段期间，从而最小化微机械结构和结合区域对蚀刻的破坏作用的暴露。 蚀刻控制密封件的使用增加了设计灵活性，并且在溶解的晶片制造工艺中提高了微机械装置的产量和质量。

公开(公告)号：US5129983A

公开(公告)日：1992-07-14

申请号：US660793

申请日：1991-02-25

Applicant: Paul Greiff

Inventor： Paul Greiff

IPC: B81B3/00 ,  G01P15/08

CPC classification number: B81B3/0072 ,  G01P15/0802 ,  B81B2201/0235 ,  B81C2201/014

Abstract: A method of fabrication of micromechanical devices enables the production of large area micromechanical transducer structures which are symmetric, stress balanced structures relatively devoid of geometric distortions. Micromechanical transducer structures are fabricated implementing processes and physical characteristics which overcome the unbalanced stresses occurring in high concentration diffusion planar structures that cause problematic geometric distortions that restrict physical size. Large increases in the practical size of micromechanical devices which may be fabricated are achieved while permitting greater depths of structural features, without the resultant concentration and stress distortions. Multilevel, balanced stress structures can be created which are of varying geometries at each level to produce a "sculpted" structure.

Abstract translation: 微机械装置的制造方法使得能够生产大面积的微机械换能器结构，其是对称的，应力平衡的结构相对缺乏几何失真。 制造了微机械传感器结构，其实现了克服在高浓度扩散平面结构中发生的不平衡应力的过程和物理特性，其导致限制物理尺寸的有问题的几何失真。 实现可以制造的微机械装置的实际尺寸的大的增加，同时允许较大的结构特征深度，而没有产生的浓度和应力变形。 可以创建多层平衡的应力结构，其在各个层次上具有不同的几何形状以产生“雕刻”结构。

公开(公告)号：US20240247986A1

公开(公告)日：2024-07-25

申请号：US18597341

申请日：2024-03-06

Applicant: NextInput, Inc.

Inventor： Julius Minglin Tsai ,  Ryan Diestelhorst ,  Dan Krstyen Benjamin

IPC: G01L1/18 ,  B81B3/00 ,  B81C1/00 ,  G01L1/26

CPC classification number: G01L1/18 ,  B81B3/0021 ,  B81C1/00595 ,  G01L1/26 ,  B81B2203/0127 ,  B81C2201/014

Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

公开(公告)号：US20230294980A1

公开(公告)日：2023-09-21

申请号：US17697957

申请日：2022-03-18

Applicant: Vanguard International Semiconductor Corporation

Inventor： RAKESH CHAND ,  Sock Kuan Soo ,  MUNIANDY SHUNMUGAM ,  RAMACHANDRAMURTHY PRADEEP YELEHANKA

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00571 ,  B81B3/0021 ,  B81C2201/014 ,  B81C2201/0197 ,  B81C2201/0181 ,  B81C2201/0176 ,  B81C2201/0104 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315

Abstract: A micro-electro-mechanical system (MEMS) device includes a supporting substrate, a cavity disposed in the supporting substrate, a stopper, and a MEMS structure. The stopper is disposed between the supporting substrate and the cavity, and an inner sidewall of the stopper is in contact with the cavity. The stopper includes a filling material surrounding a periphery of the cavity, and a liner wrapping around the filling material. The MEMS structure is disposed over the cavity and attached on the stopper and the supporting substrate.

公开(公告)号：US20230239628A1

公开(公告)日：2023-07-27

申请号：US17830448

申请日：2022-06-02

Applicant: Fortemedia, Inc.

Inventor： Li-Jen CHEN ,  Yu-Xuan XU ,  Yu-Ting CHENG ,  Shih-Chin GONG

IPC: H04R9/06 ,  B81C1/00 ,  H04R7/04 ,  H04R7/16 ,  H04R1/02 ,  H04R31/00 ,  H04R9/02 ,  H04R9/04

CPC classification number: H04R9/06 ,  B81C1/00587 ,  H04R1/025 ,  H04R7/04 ,  H04R7/16 ,  H04R9/025 ,  H04R9/047 ,  H04R31/003 ,  H04R31/006 ,  B81C2201/014 ,  B81C2201/0132 ,  B81C2201/0133 ,  H04R2307/025

Abstract: A package structure of a micro speaker is provided. The package structure includes a substrate, a diaphragm, a coil, an etch stop layer, a carrier board, a permanent magnetic element, and package lid. The substrate has a hollow chamber. The diaphragm is suspended over the hollow chamber. The coil is embedded in the diaphragm. The etch stop layer is positioned below the coil and overlaps the coil in the direction that is perpendicular to the top surface of the diaphragm. The etch stop layer is made of a metal material. The carrier board is disposed on the bottom surface of the substrate. The permanent magnetic element is disposed on the carrier board and in the hollow chamber. The package lid is wrapped around the substrate and the diaphragm, and has a lid opening that exposes a portion of the top surface of the diaphragm.

公开(公告)号：US20190047851A1

公开(公告)日：2019-02-14

申请号：US16160683

申请日：2018-10-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kai-Chih Liang ,  Chia-Hua Chu ,  Te-Hao Lee ,  Jiou-Kang Lee ,  Chung-Hsien Lin

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00515 ,  B81B7/0006 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2207/07 ,  B81B2207/095 ,  B81B2207/096 ,  B81C1/00293 ,  B81C1/00301 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145 ,  B81C2203/035 ,  H01L2224/11

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

公开(公告)号：US10005662B2

公开(公告)日：2018-06-26

申请号：US15680996

申请日：2017-08-18

Applicant: Texas Instruments Incorporated

Inventor： Lee Alan Stringer ,  Mona Eissa ,  Byron J. R. Shulver ,  Sopa Chevacharoenkul ,  Mark R. Kimmich ,  Sudtida Lavangkul ,  Mark L. Jenson

IPC: B81C1/00 ,  G01R33/04 ,  G01R33/00

CPC classification number: B81C1/00825 ,  B81C1/00365 ,  B81C2201/0138 ,  B81C2201/014 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/04

Abstract: A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.

公开(公告)号：US09988264B2

公开(公告)日：2018-06-05

申请号：US14489495

申请日：2014-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bang-Chiang Lan ,  Li-Hsun Ho ,  Wei-Cheng Wu ,  Hui-Min Wu ,  Min Chen ,  Tzung-I Su ,  Chien-Hsin Huang

IPC: H01L21/00 ,  B81C1/00 ,  H01L27/06

CPC classification number: B81C1/00246 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0792 ,  H01L27/0688

Abstract: A method of fabricating an integrated structure for MEMS device and semiconductor device comprises steps of: providing a substrate having a transistor thereon in a semiconductor device region and a first MEMS component thereon in a MEMS region; performing a interconnect process on the substrate in the semiconductor device region to form a plurality of first dielectric layers, at least a conductive plug and at least a conductive layer in the first dielectric layers; forming a plurality of second dielectric layers and an etch stopping device in the second dielectric layers on the substrate in a etch stopping device region; forming a plurality of third dielectric layers and at least a second MEMS component in the third dielectric layers on the substrate in the MEMS region; and performing an etching process to remove the third dielectric layers in the MEMS region.

公开(公告)号：US09824882B2

公开(公告)日：2017-11-21

申请号：US14982380

申请日：2015-12-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Stefano Losa ,  Raffaella Pezzuto ,  Roberto Campedelli ,  Matteo Perletti ,  Luigi Esposito ,  Mikel Azpeitia Urquia

IPC: H01L21/02 ,  B81C1/00 ,  B81B7/00

CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide to form a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide to form a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.