公开(公告)号：US20170040207A1

公开(公告)日：2017-02-09

申请号：US15332910

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Vinod R. Purayath ,  Randhir Thakur ,  Shankar Venkataraman ,  Nitin K. Ingle

IPC: H01L21/764 ,  H01L21/687 ,  H01L29/788 ,  H01L21/67 ,  H01L21/28 ,  H01L29/06

CPC classification number: H01L21/764 ,  H01J37/32357 ,  H01L21/02071 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/68764 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66833 ,  H01L29/7887

Abstract: Methods of forming flash memory cells are described which incorporate air gaps for improved performance. The methods are useful for so-called “2-d flat cell” flash architectures. 2-d flat cell flash memory involves a reactive ion etch to dig trenches into multi-layers containing high work function and other metal layers. The methods described herein remove the metal oxide debris from the sidewalls of the multi-layer trench and then, without breaking vacuum, selectively remove shallow trench isolation (STI) oxidation which become the air gaps. Both the metal oxide removal and the STI oxidation removal are carried out in the same mainframe with highly selective etch processes using remotely excited fluorine plasma effluents.

Abstract translation: 描述形成闪速存储器单元的方法，其包括用于改善性能的气隙。 这些方法对于所谓的“2-d平坦单元”闪存架构是有用的。 2-d平板电池闪存包括反应离子蚀刻，以将沟槽挖掘成包含高功函数和其它金属层的多层。 本文描述的方法从多层沟槽的侧壁去除金属氧化物碎屑，然后在不破坏真空的情况下选择性地去除成为气隙的浅沟槽隔离（STI）氧化。 金属氧化物去除和STI氧化去除都是使用远程激发的氟等离子体流出物，在相同的主机中进行高选择性蚀刻工艺。

公开(公告)号：US20160240389A1

公开(公告)日：2016-08-18

申请号：US15137754

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/32137 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/32136

Abstract: A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.

Abstract translation: 描述了蚀刻图案化异质含硅结构的方法，并且包括与现有远程等离子体蚀刻相比具有反向选择性的远程等离子体蚀刻。 这些方法可用于在少量或不含氧化硅的同时去除多晶硅。 更一般地，含有较少氧的含硅膜比含有更多氧的含硅膜更快地除去。 其他示例性应用包括修整硅碳氮化物膜，同时基本上保留碳氧化硅。 诸如这些的应用由本文提供的方法实现，并且实现了新的工艺流程。 预期这些工艺流程对于各种更细的线宽结构是理想的。 本文包含的方法也可以用于比含有较高氮浓度的含氮和硅的膜更快地蚀刻含硅膜。

公开(公告)号：US09417515B2

公开(公告)日：2016-08-16

申请号：US14139507

申请日：2013-12-23

Applicant: Applied Materials, Inc.

Inventor： Soumendra N. Barman ,  Cara Beasley ,  Abhijit Basu Mallick ,  Ralf Hofmann ,  Nitin K. Ingle

IPC: G03F1/24 ,  G03F1/22 ,  G03F7/20 ,  G21K1/06 ,  G03F7/16

CPC classification number: G03F1/24 ,  G03F7/164 ,  G03F7/70316 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

Abstract: An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer.

Abstract translation: 一种极紫外镜或空白生产系统包括：用于在半导体衬底上沉积平坦化层的第一沉积系统; 用于在所述平坦化层上沉积超光滑层的第二沉积系统，所述超平滑层具有重组的分子; 以及用于在超平滑层上沉积多层堆叠的第三沉积系统。 极紫外线空白包括：基材; 衬底上的平坦化层; 在平坦化层上的超光滑层，超光滑层具有重组的分子; 多层堆叠 并在多层堆叠上覆盖层。 极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于在平坦化层上放置具有平坦化层和超平滑层的极紫外线掩模坯料的掩模版台; 以及用于放置晶片的晶片台。

公开(公告)号：US20160222522A1

公开(公告)日：2016-08-04

申请号：US15095342

申请日：2016-04-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

IPC: C23F1/12 ,  H01J37/32

CPC classification number: C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

公开(公告)号：US09390937B2

公开(公告)日：2016-07-12

申请号：US13833033

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01L21/768 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/76802

Abstract: A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅 - 氮和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的含硅 - 和碳的材料的区域反应。 等离子体流出物与图案化的异相结构反应，以便从暴露的含硅 - 碳和碳的材料区域中选择性地除去含有含氮和碳的材料，同时非常缓慢地除去选定的其它暴露的材料。 含氮和碳的材料的选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件控制到达基底的离子充电物质的数量。 该方法可用于以比暴露的氧化硅或暴露的氮化硅更快的速率选择性地除去含硅 - 碳和碳的材料。

公开(公告)号：US09362130B2

公开(公告)日：2016-06-07

申请号：US14186059

申请日：2014-02-21

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334

Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

Abstract translation: 蚀刻图案化衬底的方法可以包括使含氧前体流入与衬底处理区流体耦合的第一远程等离子体区域。 可以在第一远程等离子体区域中形成等离子体的同时将含氧前体流入该区域以产生含氧等离子体流出物。 所述方法还可以包括使含氟前体流入与基板处理区流体耦合的第二远程等离子体区域，同时在第二远程等离子体区域中形成等离子体以产生含氟等离子体流出物。 所述方法可以包括将含氧等离子体流出物和含氟等离子体流出物流入处理区域，并且使用流出物蚀刻容纳在基板处理区域中的图案化基板。

公开(公告)号：US20160104648A1

公开(公告)日：2016-04-14

申请号：US14514213

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67253 ,  H01L22/26

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

Abstract translation: 调节等离子体源的内表面的方法包括将第一源气体流入等离子体源的等离子体产生腔中，所述等离子体源至少部分地被内表面封闭。 在将功率发射到等离子体产生腔中时，第一源气体点燃以形成第一等离子体，产生第一等离子体产物，其部分粘附到内表面。 该方法还包括使第一等离子体产物从等离子体产生腔流出到处理室，其中工件被第一等离子体产物处理，使第二源气体流入等离子体产生腔。 在将功率发射到等离子体产生腔中时，第二源气体点燃以形成第二等离子体，产生至少部分地从内表面去除第一等离子体产物的部分的第二等离子体产物。

公开(公告)号：US20160104606A1

公开(公告)日：2016-04-14

申请号：US14514222

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01J37/32 ,  C23C16/50 ,  G01J3/02

CPC classification number: H01J37/32972 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52 ,  G01J3/0218 ,  G01J3/443 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/3255

Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

Abstract translation: 在一个实施例中，等离子体源包括构造成通过其中的第一穿孔传送一个或多个等离子体源气体的第一电极; 绝缘体，设置成围绕第一电极的周边与第一电极接触; 以及第二电极，设置有第二电极的周边抵靠绝缘体，使得第一和第二电极和绝缘体限定等离子体产生腔。 第二电极被配置为使等离子体产物从等离子体产生腔通过其中朝向处理室移动。 电源提供穿过第一和第二电极的电力，以使等离子体与等离子体产生腔中的一个或多个等离子体源气体点燃以产生等离子体产物。 第一电极，第二电极和绝缘体之一包括提供来自等离子体的光信号的端口。

公开(公告)号：US09299583B1

公开(公告)日：2016-03-29

申请号：US14562402

申请日：2014-12-05

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31122

Abstract: Methods of selectively etching aluminum oxide from the surface of a patterned substrate are described. The etch selectively removes aluminum oxide relative to other metal oxides and silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing aluminum oxide to plasma effluents formed in a remote plasma from a chlorine-containing precursor and a hydrocarbon. A remote plasma is used to excite the precursors and a local plasma is used to further excite the plasma effluents and accelerate ions toward the patterned substrate.

Abstract translation: 描述了从图案化衬底的表面选择性地蚀刻氧化铝的方法。 蚀刻相对于其它金属氧化物和含硅膜如硅，多晶硅，氧化硅，硅锗和/或氮化硅选择性去除氧化铝。 所述方法包括将氧化铝暴露于在含氯前体和烃类的远程等离子体中形成的等离子体流出物中。 使用远程等离子体来激发前体，并且使用局部等离子体来进一步激发等离子体流出物并将离子加速到图案化衬底。

公开(公告)号：US20160086815A1

公开(公告)日：2016-03-24

申请号：US14543618

申请日：2014-11-17

Applicant: Applied Materials, Inc.

Inventor： Mandar Pandit ,  Xikun Wang ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用从含氟前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。