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    ION IMPLANTATION DEVICE WITH A DUAL PUMPING MODE AND METHOD THEREOF
    251.
    发明申请
    ION IMPLANTATION DEVICE WITH A DUAL PUMPING MODE AND METHOD THEREOF 有权
    具有双泵模式的离子植入装置及其方法

    公开(公告)号：US20080105833A1

    公开(公告)日：2008-05-08

    申请号：US11866099

    申请日：2007-10-02

    Applicant: Jonathan Gerald England ,  Christopher R. Hatem ,  Jay Thomas Scheuer ,  Joseph C. Olson

    Inventor： Jonathan Gerald England ,  Christopher R. Hatem ,  Jay Thomas Scheuer ,  Joseph C. Olson

    IPC: H01J37/317

    CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/182

    Abstract: An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.

    Abstract translation: 公开了一种用于生产原子或分子离子束的双泵浦模式及其方法的离子注入装置。 在一个特定的示例性实施例中，提供离子注入装置，用于控制对应于正在产生的离子束种类的离子束源壳体内的压力。 离子注入装置可以包括离子束源壳体，其包括用于离子束产生的多个物质。 还可以包括泵送部分以从离子束源壳体排出气体。 可以进一步包括控制器，以根据对应于用于离子束产生的多种物质的种类的泵送参数来控制泵送部分。

    Ion source including magnet and magnet yoke assembly
    253.
    发明申请
    Ion source including magnet and magnet yoke assembly 失效
    离子源包括磁体和磁轭组件

    公开(公告)号：US20080048127A1

    公开(公告)日：2008-02-28

    申请号：US11509076

    申请日：2006-08-24

    Applicant: Nestor P. Murphy ,  David E. Rock

    Inventor： Nestor P. Murphy ,  David E. Rock

    IPC: H01J27/00

    CPC classification number: H01J27/143 ,  H01F7/0205 ,  H01F7/0278 ,  H01J37/08 ,  H01J2237/061 ,  H01J2237/3142 ,  H01J2237/3151

    Abstract: An ion source is provided which is capable of generating and/or emitting an ion beam which may be used to deposit a layer on a substrate or to perform other functions. In certain example embodiments, a magnet yoke assembly used in the ion source is provided, and the magnet yoke assembly includes a lower yoke and an upper yoke. At least one magnet is disposed between the lower yoke and the upper yoke, with the at least one magnet having a substantially rectangular shape in certain example embodiments. The at least one magnet may be adhered to the lower yoke and/or the upper yoke.

    Abstract translation: 提供了能够产生和/或发射离子束的离子源，所述离子束可用于在衬底上沉积层或执行其它功能。 在某些示例性实施例中，提供了用于离子源的磁轭组件，磁轭组件包括下磁轭和上磁轭。 在一些示例性实施例中，至少一个磁体设置在下磁轭和上磁轭之间，其中至少一个磁体具有基本上矩形的形状。 至少一个磁体可以粘附到下磁轭和/或上磁轭。

    ION IMPLANTATION ION SOURCE, SYSTEM AND METHOD
    254.
    发明申请
    ION IMPLANTATION ION SOURCE, SYSTEM AND METHOD 审中-公开

    公开(公告)号：US20070278417A1

    公开(公告)日：2007-12-06

    申请号：US11778272

    申请日：2007-07-16

    Applicant: Thomas Horsky ,  John Williams

    Inventor： Thomas Horsky ,  John Williams

    IPC: H01J27/00

    CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/082 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705

    Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

    Ion implantation ion source, system and method
    255.
    发明申请
    Ion implantation ion source, system and method 失效

    公开(公告)号：US20070262262A1

    公开(公告)日：2007-11-15

    申请号：US11647924

    申请日：2006-12-29

    Applicant: Thomas Horsky ,  John Williams

    Inventor： Thomas Horsky ,  John Williams

    IPC: H01J3/14

    CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

    Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large faction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

    Methods of implanting ions and ion sources used for same
    259.
    发明申请
    Methods of implanting ions and ion sources used for same 审中-公开
    植入离子和离子源的方法

    公开(公告)号：US20070178679A1

    公开(公告)日：2007-08-02

    申请号：US11504355

    申请日：2006-08-15

    Applicant: Christopher Hatem ,  Anthony Renau ,  James E. White

    Inventor： Christopher Hatem ,  Anthony Renau ,  James E. White

    IPC: H01L21/425 ,  H01J37/08

    CPC classification number: H01J37/08 ,  C23C14/48 ,  H01J37/3171 ,  H01L21/265

    Abstract: A method of implanting ions comprising generating C2B10Hx, ions from C2B10H12 and implanting the C2B10Hx, ions in a material. In some embodiments, the molecular weight of the C2B10Hx, ions is greater than 100 amu. In other embodiments, the molecular weight of the C2B10Hx, ions is approximately 132 to 144 amu or approximately 136 to 138 amu. An ion source is also disclosed comprising a chamber housing defining a chamber and a source feed gas supply configured to introduce C2B10H12 into the chamber, wherein the ion source is configured to ionize the source feed gas within the chamber into C2B10Hxions.

    Abstract translation: 一种植入离子的方法，包括产生C 2 H 2 H x H 2，从C 2 H 2 N 将12 H 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 2离子注入到材料中。 在一些实施方案中，C 12 H 12 H 12 H 12的离子的分子量大于100amu。 在其它实施方案中，C 12 H 12 H 12离子的分子量为约132至144amu或约136至138amu 。 还公开了一种离子源，其包括限定腔室的腔室和构造成将C 2 H 2 H 12 H 12引入到 所述室，其中所述离子源被配置为将所述室内的所述源进料气体离子化为C 2 H 12 H 12 H 12。

    Ion implanter and method of manufacturing semiconductor device
    260.
    发明授权
    Ion implanter and method of manufacturing semiconductor device 有权
    离子注入机及制造半导体器件的方法

    公开(公告)号：US07247867B2

    公开(公告)日：2007-07-24

    申请号：US11170171

    申请日：2005-06-30

    Applicant: Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

    Inventor： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

    IPC: G01N23/00 ,  G01N21/00 ,  A61N5/00 ,  H01J37/08

    CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/244 ,  H01J2237/065 ,  H01J2237/083 ,  H01J2237/20207 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/24578 ,  H01J2237/31703

    Abstract: An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

    Abstract translation: 离子注入机包括用于设置具有主表面的样品的样品台，被配置为产生多个离子的离子产生部分，离子产生部分包括引入离子源气体的容器和用于发射热电子的灯丝 设置在容器中的植入部，其构造成在样品的主表面中植入含有多个离子的离子束，以及控制部，其被配置为控制样品的位置或从灯丝发射的电子的空间分布 离子束的重心的偏心方向与主面的法线方向一致。

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