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    METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES
    22.
    发明申请
    METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES 审中-公开
    用微型结构处理对象的方法

    公开(公告)号：US20100297362A1

    公开(公告)日：2010-11-25

    申请号：US12848871

    申请日：2010-08-02

    Applicant: Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann

    Inventor： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann

    IPC: C23C8/06

    CPC classification number: G03F1/74 ,  C23C16/047 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/24495 ,  H01J2237/30466 ,  H01J2237/30483 ,  H01J2237/31732 ,  H01J2237/31744

    Abstract: A method for processing an object with miniaturized structures is provided. The method includes feeding a reaction gas onto a surface of the object. The method also includes processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object. The method further includes detecting interaction products of the beam with the object, and deciding whether the processing of the object is to be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object. The region to be processed is subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment are integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated.

    Abstract translation: 提供了一种用小型化结构处理物体的方法。 该方法包括将反应气体进料到物体的表面上。 该方法还包括通过将能量束引导到物体表面上待处理的区域中的处理位置上以便将物质沉积在物体上或从物体上去除材料来处理物体。 该方法还包括检测光束与物体的相互作用产物，并且借助于从检测到的与物体的光束的相互作用产物获得的信息来确定物体的处理是继续还是可以终止。 要处理的区域被细分成多个表面段，并且在相同表面段的射束区域上检测到的相互作用产物被积分以形成总信号，以便确定物体的处理是否必须继续或可以 被终止。

    Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface
    24.
    发明授权
    Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface 有权
    在表面处蚀刻具有聚焦电子束的材料在所述表面处引起的化学反应的程序

    公开(公告)号：US07537708B2

    公开(公告)日：2009-05-26

    申请号：US11772755

    申请日：2007-07-02

    Applicant: Hans Wilfried Peter Koops ,  Klaus Edinger

    Inventor： Hans Wilfried Peter Koops ,  Klaus Edinger

    IPC: B44C1/22

    CPC classification number: H01L21/31122 ,  G03F1/74 ,  H01J37/3056 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01L21/31105

    Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.

    Abstract translation: 本发明涉及通过在所述表面处聚焦的电子束诱导的化学反应在表面处蚀刻材料的方法。 本发明的特征在于，在真空气氛中，待蚀刻的材料用至少一束分子，至少一束光子和至少一束电子照射，由此照射的材料和 分子束以使得由所述材料和所述分子组合物预定的化学反应发生并形成反应产物的方式被激发，并且从材料表面照射和去除步骤中除去所述反应产物。

    Field effect transistor sensor
    25.
    发明授权
    Field effect transistor sensor 有权
    场效应晶体管传感器

    公开(公告)号：US07335942B2

    公开(公告)日：2008-02-26

    申请号：US10495632

    申请日：2002-11-08

    Applicant: Klaus Edinger ,  Ivajlo Rangelow ,  Piotr Grabiec ,  John Melngailis

    Inventor： Klaus Edinger ,  Ivajlo Rangelow ,  Piotr Grabiec ,  John Melngailis

    IPC: H01L29/72

    CPC classification number: G01Q60/30 ,  G01N27/82 ,  G01Q70/10 ,  G01R1/07 ,  G01R33/06

    Abstract: The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces (40) or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The invention also relates to a Hall sensor made of at least one semiconductor material for detecting magnetic fields and whose lateral resolution capacity can be electrically adjusted, in addition to a semiconductor electrode (28) whose electrode surface can be electrically adjusted.

    Abstract translation: 本发明涉及一种用于检查探针表面（40）或与传感器相邻的区域的筛选探针显微镜的探头的传感器，其包括由至少一种半导体材料制成的至少一个场效应晶体管（FET）。 本发明还涉及一种由用于检测磁场并且其横向分辨率能够被电调节的至少一种半导体材料制成的霍尔传感器，以及电极表面可以被电调节的半导体电极（28）。

    Procedure for etching of materials at the surface with focussed electron beam induced chemical reaction at said surface
    26.
    发明申请
    Procedure for etching of materials at the surface with focussed electron beam induced chemical reaction at said surface 有权
    用表面蚀刻具有聚焦电子束的表面材料的程序

    公开(公告)号：US20050072753A1

    公开(公告)日：2005-04-07

    申请号：US10628174

    申请日：2003-07-28

    Applicant: Hans Koops ,  Klaus Edinger

    Inventor： Hans Koops ,  Klaus Edinger

    IPC: H01L21/302 ,  C23F1/00 ,  H01J20060101 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

    CPC classification number: H01J37/317 ,  H01J37/3056 ,  H01J2237/31744

    Abstract: The invention relates to a procedure for etching of materials at the surface by focussed electron beam induced chemical reaction at the surface, with the following steps: a) in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules and at least one first beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction takes place and forms a reaction product, which is not gaseous/not volatile—reaction step. The invention is characterized in that b) the reaction product is evaporated from said surface by an second beam of electrons, which heats the material locally to a temperature above the vaporisation temperature of the reaction product —removal step—.

    Abstract translation: 本发明涉及通过聚焦电子束在表面引起的化学反应在表面上蚀刻材料的步骤，其具有以下步骤：a）在真空气氛中，待蚀刻的材料用至少一束 分子和至少一个第一电子束，由此照射的材料和分子束的分子以发生化学反应的方式被激发，并形成不是气体/非挥发性反应步骤的反应产物。 本发明的特征在于b）通过第二电子束从所述表面蒸发反应产物，其将该材料局部加热到高于反应产物 - 蒸发步骤的蒸发温度的温度。

    Apparatus and method for investigating and/or modifying a sample
    28.
    发明授权
    Apparatus and method for investigating and/or modifying a sample 有权
    用于调查和/或修改样品的装置和方法

    公开(公告)号：US08247782B2

    公开(公告)日：2012-08-21

    申请号：US12745059

    申请日：2010-05-27

    Applicant: Klaus Edinger ,  Rainer Becker ,  Michael Budach ,  Thorsten Hofmann

    Inventor： Klaus Edinger ,  Rainer Becker ,  Michael Budach ,  Thorsten Hofmann

    IPC: H01J49/22 ,  G21K5/02

    CPC classification number: C23F4/00 ,  H01J37/3056 ,  H01J2237/28 ,  H01J2237/3174 ,  H01L21/76894 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged—in a direction of propagation of charged particles emitted by said charged particle source—downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz.

    Abstract translation: 公开了一种用于调查和/或修改样品的装置和方法。 所述装置包括带电粒子源，至少一个粒子光学元件，形成由所述带电粒子源发射的带电粒子的带电粒子束。 该装置还包括从所述带电粒子束产生带电粒子探针的物镜。 物镜定义了粒子光轴。 第一静电偏转元件布置在由物镜的下游的所述带电粒子源发射的带电粒子的传播方向上。 静电偏转元件使垂直于所述带电粒子光轴的方向偏转带电粒子束并具有至少10MHz的偏转带宽。

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