公开(公告)号：US20030062069A1

公开(公告)日：2003-04-03

申请号：US10224625

申请日：2002-08-20

Applicant: Semitool, Inc

Inventor： Ronald G. Breese ,  C. James Bryer ,  Eric J. Bergman ,  Dana R. Scranton

IPC: B08B007/00

CPC classification number: H01L21/67051 ,  B08B9/0861 ,  B08B9/32 ,  Y10S134/902

Abstract: In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution. The chelating agent solution removes metallic contamination from the containers. The containers are then rinsed with a rinsing liquid, such as deionized water and a surfactant. The containers are then dried, preferably by applying heat and/or hot air movement.

Abstract translation: 在清洁金属离子污染物（特别是铜）的清洁方法中，容器被装载到清洁装置中。 用稀释的螯合剂溶液喷洒容器。 螯合剂溶液从容器中除去金属污染物。 然后用漂洗液如去离子水和表面活性剂漂洗容器。 然后将容器干燥，优选通过施加热和/或热空气运动。

公开(公告)号：US20030051974A1

公开(公告)日：2003-03-20

申请号：US10200075

申请日：2002-07-19

Applicant: Semitool, Inc.

Inventor： Jeffry Davis

IPC: B65G015/64

CPC classification number: H01L21/67769 ,  H01L21/67754 ,  H01L21/67757 ,  H01L21/67772 ,  H01L21/67775 ,  H01L21/67778 ,  H01L21/67781 ,  H01L21/68707

Abstract: An automated processing system for processing flat workpieces, such as semiconductor wafers, operates by loading the workpieces into a first carrier. A process robot is adapted to engage external features of the first carrier, for lifting and moving the first carrier within the system. The process robot delivers the first carrier holding the wafers of a first size to a process chamber. The first carrier is secured in the process chamber by one or more of the external features of the first carrier. The first carrier has interior features, such as combs and slots, for holding wafers of a different first size. A second carrier has external features which are the same as the external features of the first carrier. The second carrier has inside features which are dimensioned to hold wafers of a second size, different from the first size. The automated processing system can accordingly handle or operate with both the first and second carriers, and thereby process workpieces having different sizes.

Abstract translation: 用于处理诸如半导体晶片的扁平工件的自动化处理系统通过将工件装载到第一载体中来操作。 过程机器人适于接合第一承载件的外部特征，用于提升和移动系统内的第一承载件。 过程机器人将保持第一尺寸的晶片的第一载体传送到处理室。 第一载体通过第一载体的一个或多个外部特征固定在处理室中。 第一载体具有诸如梳子和槽的内部特征，用于保持不同的第一尺寸的晶片。 第二载体具有与第一载体的外部特征相同的外部特征。 第二载体具有内部特征，其尺寸被设计成保持与第一尺寸不同的第二尺寸的晶片。 自动化处理系统可相应地处理或操作第一和第二载体，从而处理具有不同尺寸的工件。

公开(公告)号：US20030051743A1

公开(公告)日：2003-03-20

申请号：US10200071

申请日：2002-07-19

Applicant: Semitool, Inc.

Inventor： Ronald G. Breese ,  C. James Bryer ,  Eric J. Bergman ,  Dana R. Scranton

IPC: B08B007/00

CPC classification number: H01L21/67051 ,  B08B3/12 ,  B08B9/0861 ,  B08B9/32

Abstract: In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a loader of a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution, while the rotor is spinning. The chelating agent solution removes metallic contamination from the containers. The containers are then sprayed with a rinsing liquid, such as deionized water and a surfactant while the rotor is spinning and heat is applied. The containers are then dried by applying heat, hot air movement and spinning the rotor.

Abstract translation: 在清洁金属离子污染物尤其是铜的清洁方法中，将容器装载到清洁装置的装载机中。 当转子旋转时，用稀释的螯合剂溶液喷洒容器。 螯合剂溶液从容器中除去金属污染物。 然后在转子旋转并施加热量的同时，用诸如去离子水和表面活性剂的冲洗液体喷洒容器。 然后通过加热，热空气运动并旋转转子干燥容器。

公开(公告)号：US20030010362A1

公开(公告)日：2003-01-16

申请号：US09907544

申请日：2001-07-16

Applicant: Semitool, Inc.

Inventor： Dana Scranton ,  Eric Bergman ,  Eric Lund ,  Joe Lanfrankie ,  Worm Lund

IPC: B08B003/00

CPC classification number: H01L21/67057 ,  B08B3/045 ,  Y10S134/902

Abstract: Workpieces requiring low levels of contamination, such as semiconductor wafers, are loaded into a rotor within a process chamber. The process chamber has a horizontal drain opening in its cylindrical wall. The chamber is closed via a door. A process or rinsing liquid is introduced into the chamber. The liquid rises to a level so that the workpieces are immersed in the liquid. The chamber slowly pivots or rotates to move the drain opening down to the level of the liquid. The liquid drains out through the drain opening. The drain opening is kept near the surface of the liquid to drain off liquid at a uniform rate. An organic solvent vapor is introduced above the liquid to help prevent droplets of liquid from remaining on the workpieces as the liquid drains off. The rotor spins the workpieces to help to remove any remaining droplets by centrifugal force.

Abstract translation: 需要低水平污染的工件（例如半导体晶片）被装载到处理室内的转子中。 处理室在其圆柱形壁上具有水平排放开口。 房间通过门关闭。 将过程或冲洗液体引入室中。 液体升高到一定水平，使得工件浸入液体中。 腔室缓慢地枢转或旋转以将排水口向下移动到液体的高度。 液体通过排水口排出。 排水口保持在液体表面附近，以均匀的速度排出液体。 在液体上方引入有机溶剂蒸汽，以帮助防止液体液滴排出时残留在工件上。 转子旋转工件以帮助通过离心力去除任何剩余的液滴。

公开(公告)号：US20030010352A1

公开(公告)日：2003-01-16

申请号：US09907485

申请日：2001-07-16

Applicant: Semitool, Inc.

Inventor： Eric Bergman ,  Dana Scranton ,  Eric Lund ,  Worm Lund

IPC: B08B003/12 ,  B08B003/04 ,  B08B007/04

CPC classification number: B08B3/12 ,  Y10S134/902

Abstract: A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

Abstract translation: 用于处理工件的系统包括可枢转地支撑在外室内的内室。 内室具有开口以允许液体排出。 电动机使内腔枢转，使开口处于内腔液面之下或之下。 当内室转动时，液体排出。 内腔内的工件支撑在可固定或旋转的支架或转子上。 多个工艺可以在内腔内执行，减少了在各种装置之间移动工件的需要，并减少污染的风险。

公开(公告)号：US20020195129A1

公开(公告)日：2002-12-26

申请号：US10217716

申请日：2002-08-13

Applicant: Semitool, Inc.

Inventor： Gary L. Curtis ,  Raymon F. Thompson

IPC: B08B003/02

CPC classification number: H01L21/67017 ,  B08B3/04 ,  H01L21/32134 ,  H01L21/67075 ,  H01L21/6708 ,  Y10S134/902

Abstract: In a method for rinsing and drying a semiconductor workpiece in a micro-environment, the workpiece is placed into a rinser/dryer housing. The rinser/dryer housing is rotated by a rotor motor. The rinser/dryer housing defines a substantially closed rinser/dryer chamber. Rinsing and drying fluids are distributed across at least one face of the semiconductor workpiece by the action of centrifugal force generated during rotation of the housing. A fluid supply system is connected to sequentially supply a rinsing fluid followed by a drying fluid to the chamber as the housing is rotated.

公开(公告)号：US20020074233A1

公开(公告)日：2002-06-20

申请号：US09885451

申请日：2001-06-20

Applicant: Semitool, Inc.

Inventor： Thomas L. Ritzdorf ,  E. Henry Stevens ,  Linlin Chen ,  Lyndon W. Graham ,  Curt Dundas

IPC: C25D005/18 ,  C25D007/12 ,  C25D011/32 ,  C25D005/50 ,  C25D017/00

CPC classification number: H01L21/67173 ,  C25D5/022 ,  C25D5/50 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/76883

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract translation: 阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。 根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。 还提出了用于执行独特退火工艺的各种新型装置。

公开(公告)号：US6361611B2

公开(公告)日：2002-03-26

申请号：US77857901

申请日：2001-02-07

Applicant: SEMITOOL INC

Inventor： JOLLEY MICHAEL K

IPC: C23C4/18 ,  C11D11/00 ,  C23G1/22 ,  G03F7/42 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3213 ,  C03C23/00 ,  C23G1/02

CPC classification number: H01L21/02071 ,  C11D11/0047 ,  C23G1/22 ,  G03F7/425 ,  H01L21/32134

Abstract: A method for use in the manufacture of a microelectronic device is set forth. The method include to a first step in which a workpiece including exposed metallized surfaces and residues is provided. The workpiece, including the exposed metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an additive layer of an anti-corrosive compound on the exposed metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. When the surfaces are principally include of aluminum, the solution may be include of DI water, an ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Abstract translation: 阐述了一种用于制造微电子器件的方法。 该方法包括提供包括暴露的金属化表面和残留物的工件的第一步骤。 包括暴露的金属化表面的工件然后用含有一种或多种在露出的金属化表面上形成抗腐蚀化合物的添加剂层的一种或多种组分的碱性水基溶液处理。 溶液与残留物反应，有助于将其从工件中取出。 当表面主要包括铝时，溶液可以包括去离子水，氢氧化铵基组分如TMAH，硅酸和氢氧化铝。

公开(公告)号：US20020004301A1

公开(公告)日：2002-01-10

申请号：US09815931

申请日：2001-03-23

Applicant: Semitool, Inc.

Inventor： Linlin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz JR.

IPC: H01L021/44

CPC classification number: H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

Abstract translation: 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US20010047757A1

公开(公告)日：2001-12-06

申请号：US09922362

申请日：2001-08-02

Applicant: SEMITOOL, INC.

Inventor： Gary L. Curtis ,  Raymon F. Thompson

IPC: C23C016/00

CPC classification number: H01L21/67017 ,  B08B3/04 ,  H01L21/32134 ,  H01L21/6708 ,  Y10S134/902

Abstract: An apparatus for processing a workpiece in a micro-environment includes a workpiece housing connected to a motor for rotation. The workpiece housing defines a substantially closed processing chamber therein in which one or more processing fluids are distributed across at least one face of the workpiece by centrifugal force generated during rotation of the housing. A dividing member at the edge of the spinning workpiece separates flow of fluids off of the top and bottom surfaces of the workpiece.

Abstract translation: 用于在微环境中处理工件的装置包括连接到用于旋转的电动机的工件壳体。 工件壳体在其中限定基本封闭的处理室，其中一个或多个处理流体在壳体旋转期间产生的离心力穿过工件的至少一个面分布。 旋转工件边缘处的分隔构件将流体流离开工件的顶面和底面。