公开(公告)号：US5176790A

公开(公告)日：1993-01-05

申请号：US766481

申请日：1991-09-25

申请人： Paul Arleo ,  Jon Henri ,  Graham Hills ,  Jerry Wong ,  Robert Wu

发明人： Paul Arleo ,  Jon Henri ,  Graham Hills ,  Jerry Wong ,  Robert Wu

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/31116

摘要： An improved process is described for forming one or more vias through an insulation layer by plasma etching to an underlying metal layer without depositing etch residues, including metal sputtered from the underlying metal layer, onto the sidewalls of the vias, which comprises, in one embodiment, using in the gaseous etchant one or more 3-6 carbon fluorinated hydrocarbons having the formula C.sub.x H.sub.y F.sub.z, wherein x is 3 to 6, y is 0 to 3, and z is 2x-y when the fluorinated hydrocarbon is cyclic and z is 2x-y+2 when the fluorinated hydrocarbon is noncyclic. One or more other fluorine-containing gases may also be used as long as the 3-6 carbon fluorinated hydrocarbons comprise at least 10 volume % of the fluorine-containing gas mixture. The fluorinated hydrocarbon gas or fluorine-containing gas mixture also may be mixed with up to 90 volume % total of one or more inert gases to control the taper of the via walls. At least about 5 sccm of the total gas flow must comprise a 3-6 carbon fluorinated hydrocarbon gas, regardless of the volume % of 3-6 carbon fluorinated hydrocarbon gas in the total gas stream flow. In another embodiment, a controlled amount of one or more nitrogen-containing gases are used with one or more fluorine-containing etchant gas wherein the amount of nitrogen-containing gas ranges from about 1 volume part nitrogen-containing gas per 15 volume parts fluorine-containing gas to about 1 volume part nitrogen-containing gas per 2 volume parts fluorine-containing gas.

摘要翻译： 描述了一种改进的方法，用于通过等离子体蚀刻到下面的金属层上形成一个或多个通孔，而不将包括从底层金属层溅射的金属的蚀刻残留物沉积到通孔的侧壁上，在一个实施例中包括 在气态蚀刻剂中使用具有式C x H y F z的一种或多种3-6碳氟化烃，其中x为3至6，y为0至3，当氟化烃为环状且z为2x- 当氟化烃为非环状时，y + 2。 也可以使用一种或多种其它含氟气体，只要3-6碳氟化烃包含至少10体积％的含氟气体混合物即可。 氟化烃气体或含氟气体混合物还可以与至多90体积％的一种或多种惰性气体混合以控制通孔壁的锥度。 总气流中至少约5sccm的气体必须包含3-6碳氟化烃气体，而不管总气流中的3-6碳氟化烃气体的体积百分数。 在另一个实施方案中，使用一种或多种含氮气体的受控量的一种或多种含氟气体，其中含氮气体的量为每15体积份含氟气体的约1体积份含氮气体， 每2体积份含氟气体含有约1体积份含氮气体。

公开(公告)号：US08435608B1

公开(公告)日：2013-05-07

申请号：US12163670

申请日：2008-06-27

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Shawn Hancock ,  Mike Pierce ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Shawn Hancock ,  Mike Pierce ,  Jon Henri

IPC分类号： H05H1/24

CPC分类号： H01L21/0273 ,  C23C16/045 ,  C23C16/26 ,  C23C16/505 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

摘要： Provided are plasma enhanced chemical vapor deposition methods of depositing smooth and conformal ashable hard mask films on substrates containing raised or recessed features. The methods involve using precursors having relatively high C:H ratios, such as acetylene (C:H ratio of 1), and plasmas having low ion energies and fluxes. According to various embodiments, the methods involve depositing smooth ashable hard mask films using high frequency radio frequency-generated plasmas with no low frequency component and/or relatively high pressures (e.g., 2-5 Torr). Also provided are methods of depositing ashable hard mask films having good selectivity and improved side wall coverage and roughness. The methods involve depositing a first ashable hard mask film on a substrate having a feature using a process optimized for selectivity and/or optical properties and then depositing a smoothing layer on the first ashable hard mask film using an HF-only process.

摘要翻译： 提供了等离子体增强化学气相沉积方法，其在含有凸起或凹陷特征的基底上沉积光滑和保形的可硬化硬掩模膜。 所述方法包括使用具有相对较高C:H比例的前体，例如乙炔（C：H比为1）和具有低离子能量和通量的等离子体。 根据各种实施方案，所述方法包括使用没有低频分量和/或相对高的压力（例如，2-5托）的高频无线电频率产生的等离子体沉积光滑的可硬化硬掩模薄膜。 还提供了具有良好选择性和改进的侧壁覆盖度和粗糙度的可沉积硬掩模膜的方法。 所述方法包括使用针对选择性和/或光学性质优化的方法在具有特征的基底上沉积第一可硬化硬掩模膜，然后使用仅HF工艺在第一可吸收硬掩模膜上沉积平滑层。

公开(公告)号：US20120258261A1

公开(公告)日：2012-10-11

申请号：US13443668

申请日：2012-04-10

申请人： Sirish Reddy ,  Alice Hollister ,  Pramod Subramonium ,  Jon Henri ,  Chunhai Ji ,  Zhi Yuan Fang

发明人： Sirish Reddy ,  Alice Hollister ,  Pramod Subramonium ,  Jon Henri ,  Chunhai Ji ,  Zhi Yuan Fang

IPC分类号： B29B13/08

CPC分类号： H01L21/0332 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31122 ,  H01L21/31144

摘要： A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.

摘要翻译： 一种用于沉积膜的方法包括在等离子体增强化学气相沉积室中布置基板。 基于碳基的第一可灰化硬掩模（AHM）层被沉积在基底上。 在沉积第一AHM层期间，用至少一种选自硅，硅烷，硼，氮，锗，碳，氨和二氧化碳的掺杂剂进行掺杂。 至少一种掺杂剂的原子百分比大于或等于第一AHM层的5％。

公开(公告)号：US20100151691A1

公开(公告)日：2010-06-17

申请号：US12334220

申请日：2008-12-12

申请人： Jon Henri ,  Gishun Hsu ,  Robert Sculac ,  Scott Stoddard

发明人： Jon Henri ,  Gishun Hsu ,  Robert Sculac ,  Scott Stoddard

IPC分类号： H01L21/302

CPC分类号： H01L21/3146 ,  C23C16/26 ,  C23C16/448

摘要： Provided herein are improved methods of depositing carbon-based films using acetylene as a precursor. The methods involve using a low-vapor pressure solvent, e.g., dimethylfluoride (DMF) to stabilize the acetylene and delivering the acetylene to a deposition chamber. The methods provide improved wafer-to-wafer thickness uniformity and increase the usable amount of acetylene in an acetylene source to over 95%.

摘要翻译： 本文提供了使用乙炔作为前体沉积碳基膜的改进方法。 所述方法包括使用低蒸气压溶剂，例如二甲基氟（DMF）来稳定乙炔并将乙炔输送到沉积室。 这些方法提供了改进的晶片到晶片的厚度均匀性，并且将乙炔源中的乙炔的可用量增加到超过95％。

公开(公告)号：US08591659B1

公开(公告)日：2013-11-26

申请号：US12355601

申请日：2009-01-16

申请人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

发明人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

IPC分类号： B08B9/08

CPC分类号： B08B7/0035 ,  B08B9/00 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).

摘要翻译： 提供了用于从沉积反应器的内表面除去残留物的改进的方法和装置。 这些方法涉及通过在远程等离子体发生器中产生清洁试剂自由基，然后在将清洁试剂混合物引入沉积室的同时进一步输送原位等离子体能量来增加沉积室内清洗剂自由基的可用性。 某些实施方案涉及多级方法，其包括其中以高压（例如，约0.6托或更高）引入清洗剂混合物的阶段，以及在低压（例如约0.6）下引入清洗试剂混合物的阶段 乇以下）。

公开(公告)号：US07923376B1

公开(公告)日：2011-04-12

申请号：US11396303

申请日：2006-03-30

申请人： N. Arul Dhas ,  Jon Henri

发明人： N. Arul Dhas ,  Jon Henri

IPC分类号： H01L21/31

CPC分类号： H01L21/31608 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274

摘要： The present invention provides high deposition rate PECVD methods for depositing TEOS films. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing defects. According to various embodiments, the methods involve adding a relatively small amount of helium gas to the process gas. The addition of helium significantly reduces the number of defects in the film, particularly for high deposition rate processes.

摘要翻译： 本发明提供用于沉积TEOS膜的高沉积速率PECVD方法。 该方法显着减少TEOS膜中的颗粒数，从而消除或最小化缺陷。 根据各种实施方案，所述方法包括向工艺气体中加入相对少量的氦气。 氦的添加显着地减少了膜中缺陷的数量，特别是对于高沉积速率工艺。

公开(公告)号：US06524956B1

公开(公告)日：2003-02-25

申请号：US09668217

申请日：2000-09-22

申请人： Jason Tian ,  Jon Henri

发明人： Jason Tian ,  Jon Henri

IPC分类号： H01L2144

CPC分类号： H01L21/28556 ,  H01L21/76877

摘要： A chemical vapor deposition process for depositing tungsten films having small grain size is provided. The process involves depositing a nucleation layer having very small nuclei that are closely spaced so that there are few vacancies on the surface. Such a nucleation layer results in a film with small grains after the subsequent deposition of bulk layers. The temperature of the substrate can be increased during deposition of the nucleation layer and then lowered for deposition of the bulk layer to produce a small grain tungsten film. Additionally, the thickness of the nucleation layer can be controlled, and the deposition chamber pressure and silage flow rates can also be controlled to achieve the desired nucleation layer before deposition of the bulk layers.

摘要翻译： 提供了用于沉积具有小粒度的钨膜的化学气相沉积工艺。 该方法包括沉积具有非常小的核的成核层，其具有紧密间隔，使得在表面上几乎没有空位。 这样的成核层在随后沉积体层之后产生具有小晶粒的膜。 可以在沉积成核层期间增加基底的温度，然后降低沉积本体层以产生小晶粒钨膜。 此外，可以控制成核层的厚度，并且还可以控制沉积室压力和青贮饲料流速以在堆积层之前实现期望的成核层。

公开(公告)号：US08669181B1

公开(公告)日：2014-03-11

申请号：US13032392

申请日：2011-02-22

申请人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

发明人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

IPC分类号： H01L21/44

CPC分类号： H01L21/3212 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867

摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

摘要翻译： 在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。 密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。 具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅） 。 这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

公开(公告)号：US08110493B1

公开(公告)日：2012-02-07

申请号：US12048967

申请日：2008-03-14

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/4763

CPC分类号： C23C16/26 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332

摘要： A method for forming a PECVD deposited amorphous carbon or ashable hard mask (AHM) in a trench or a via with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks with high selectivity and little or no hard mask on the sidewalls. The deposition method utilizes a pulsed precursor delivery with a plasma etch while the precursor flow is off.

摘要翻译： 在低于500℃（例如约400℃）的过程温度下，在沟槽或通孔中形成具有小于30％H含量的PECVD沉积的无定形碳或可灰化硬掩模（AHM）的方法产生低H含量 具有高选择性的硬掩模和侧壁上的很少或没有硬掩模。 沉积方法利用等离子体蚀刻的脉冲前驱物传输，同时前体流离开。

公开(公告)号：US08034725B1

公开(公告)日：2011-10-11

申请号：US12723504

申请日：2010-03-12

申请人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

发明人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

IPC分类号： H01L21/469

CPC分类号： C23C16/402 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612

摘要： This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.

摘要翻译： 本发明提供了一种用于在多站顺序沉积室中沉积TEOS膜的高通量PECVD工艺。 这些方法显着减少了TEOS膜中的颗粒数量，从而消除或最小化了小槽缺陷。 本发明的方法涉及在吹扫气体的同时第一工作站进行温度浸泡。 停止反应气体的流动并流动站1的吹扫气体可消除冷晶片表面上的TEOS冷凝，并显着减少膜中缺陷的数量，特别是对于短温浸泡。