公开(公告)号：US06514673B2

公开(公告)日：2003-02-04

申请号：US09818962

申请日：2001-03-28

申请人： Hway-Chi Lin ,  Yu-Ku Lin ,  Wen-Pin Chang ,  Ying-Lang Wang

发明人： Hway-Chi Lin ,  Yu-Ku Lin ,  Wen-Pin Chang ,  Ying-Lang Wang

IPC分类号： G03F700

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/76224

摘要： A simple method for calculating the optimum amount of HDP deposited material that needs to be removed during CMP (without introducing dishing) is described. This method derives from our observation of a linear relationship between the amount of material that needs to be removed in order to achieve full planarization and a quantity called “OD for CMP density”. The latter is defined as PA×(100−PS) where PA is the percentage of active area relative to the total wafer area and PS is the percentage of sub-areas relative to the total wafer area. The sub-areas are regions in the dielectric, above the active areas, that are etched out prior to CMP. Thus, once the materials have been characterized, the optimum CMP removal thickness is readily calculated for a wide range of different circuit implementations.

公开(公告)号：US06352924B1

公开(公告)日：2002-03-05

申请号：US09587463

申请日：2000-06-05

申请人： Jun Wu ,  Ming Jer Lee ,  Yu Ku Lin ,  Ying-Lang Wang

发明人： Jun Wu ,  Ming Jer Lee ,  Yu Ku Lin ,  Ying-Lang Wang

IPC分类号： H01L2144

CPC分类号： H01L21/76865 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A new method is provided to replace tungsten plugs for wafers that trigger the WCVD backside alarm. In this new rework process, the original TiN glue layer is sputter etched back and a new (“fresh”) 100-Angstrom thick layer of TiN is deposited. The new tungsten plug is created over the top surface of the refreshed glue layer.

摘要翻译： 提供了一种新方法来替代触发WCVD背面报警的晶片的钨丝塞。 在这种新的返工过程中，将原始TiN胶层溅射回蚀刻，并沉积出新的（“新鲜”）100埃厚的TiN层。 新的钨丝塞在刷新的胶层的上表面上形成。

公开(公告)号：US06291331B1

公开(公告)日：2001-09-18

申请号：US09412654

申请日：1999-10-04

申请人： Ying-Lang Wang ,  Jowei Dun ,  Ming-Jer Lee ,  Tong-Hua Kuan

发明人： Ying-Lang Wang ,  Jowei Dun ,  Ming-Jer Lee ,  Tong-Hua Kuan

IPC分类号： H01L2144

CPC分类号： H01L21/76801 ,  H01L2224/02166 ,  H01L2224/05093

摘要： A new method is provided for the creation of layers of dielectric that are used for metal stack interconnect layers where the metal stack exceeds five layers. A stack of five layers of metal interconnect lines contains one layer of Intra Metal dielectric (ILD) and four layers of Inter Metal dielectric (IMD). One or more of the layers of IMD can be formed in the conventional method. One or more of the layers of IMD can be formed in the conventional method after which a layer of high compressive PECVD is deposited over this one or more layers of IMD. The layer of high compressive PECVD provides a crack resistant film that eliminates the formation of cracks in the surface of the IMD.

摘要翻译： 提供了一种新的方法，用于创建用于金属堆叠互连层的电介质层，其中金属叠层超过五层。 五层金属互连线的堆叠包含一层金属介电介质（ILD）和四层金属间介质（IMD）。 IMD的一个或多个层可以用常规方法形成。 可以以常规方法形成IMD的一个或多个层，之后在该一个或多个IMD层上沉积高压缩PECVD层。 高压缩PECVD层提供了抗裂膜，消除了在IMD表面形成裂缝。

公开(公告)号：US6099662A

公开(公告)日：2000-08-08

申请号：US248726

申请日：1999-02-11

申请人： Ying-Lang Wang ,  Jowei Dun ,  Ken-Shen Chou ,  Yu-Ku Lin

发明人： Ying-Lang Wang ,  Jowei Dun ,  Ken-Shen Chou ,  Yu-Ku Lin

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  B08B3/00 ,  H01L21/00

CPC分类号： H01L21/02065 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212

摘要： An improved method for removing residual slurry particles and metallic residues from the surface of a semiconductor substrate after chemical-mechanical polishing has been developed. The cleaning method involves sequential spray cleaning solutions of NH.sub.4 OH and H.sub.2 O, NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, HF and H.sub.2 O, and HCl, H.sub.2 O.sub.2 and H.sub.2 O. The cleaning sequence is: 1. A pre-soak in a spray solution of NH.sub.4 OH and H.sub.2 O; 2. Spray cleaning in a solution of NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O; 3. Spray cleaning in a dilute solution of HF and H.sub.2 O; 4. Spray rinsing in DI-water. It is important that slurry particulates first be removed by NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, followed by spray cleaning in a dilute solution of HF and H.sub.2 O to remove metallic residues. The spray cleaning method is superior to brush cleaning methods for both oxide-CMP and tungsten-CMP and results in superior removal of slurry particles and metallic residues introduced by the CMP processes. An optional spray cleaning step using a solution of HCl, H.sub.2 O.sub.2 and H.sub.2 O results in further reduction of metallic residue contamination following oxide-CMP. Compared to traditional brush cleaning the new spray cleaning process has a 2.times. improvement in throughput, less consumption of DI water, and low risk of cross-contamination between sequentially cleaned substrates.

摘要翻译： 已经开发了用于在化学机械抛光之后从半导体衬底的表面除去残余浆料颗粒和金属残留物的改进方法。 清洗方法包括NH 4 OH和H 2 O，NH 4 OH，H 2 O 2和H 2 O，HF和H 2 O以及HCl，H 2 O 2和H 2 O的顺序喷雾清洗溶液。 清洗顺序为：1.在NH4OH和H2O的喷雾溶液中预浸泡; 2.在NH4OH，H2O2和H2O溶液中喷雾清洗; 3.在HF和H2O的稀溶液中喷雾清洗; 4.在DI水中喷淋。 重要的是，首先通过NH 4 OH，H 2 O 2和H 2 O除去浆料颗粒，然后在HF和H 2 O的稀溶液中喷雾清洗以除去金属残余物。 喷雾清洗方法优于氧化物CMP和钨-CMP两者的刷子清洗方法，并且优异地除去由CMP工艺引入的浆料颗粒和金属残留物。 使用HCl，H2O2和H2O溶液的可选喷雾清洗步骤可以进一步降低氧化物CMP后的金属残留污染。 与传统的刷子清洁相比，新的喷雾清洁过程在吞吐量方面有2倍的改善，更少的去离子水消耗，以及顺序清洗的基材之间交叉污染的风险较低。

公开(公告)号：US09254548B2

公开(公告)日：2016-02-09

申请号：US13455448

申请日：2012-04-25

申请人： Yen-Chang Chao ,  Kei-Wei Chen ,  Ying-Lang Wang

发明人： Yen-Chang Chao ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC分类号： B24B53/017 ,  B24D3/06 ,  B24D3/28 ,  B24D18/00

CPC分类号： B24B53/12 ,  B24B53/017 ,  B24D3/06 ,  B24D3/28 ,  B24D18/00

摘要： A method for making a conditioner disk used in a chemical mechanical polishing (CMP) process comprises applying a first layer of at least one binder over a substrate; disposing a plurality of diamond particles on the first layer of the at least one first binder at the plurality of locations; and fixing the plurality of diamond particles to the substrate by heating the substrate to a raised temperature and then cooling the substrate. The plurality of diamond particles disposed over the substrate are configured to provide a working diamond ratio higher than 50% when the conditioner disk is used in a CMP process.

摘要翻译： 用于制造在化学机械抛光（CMP）工艺中使用的调节盘的方法包括在衬底上施加至少一种粘合剂的第一层; 在所述多个位置处在所述至少一个第一粘合剂的所述第一层上设置多个金刚石颗粒; 以及通过将衬底加热到​​升高的温度然后冷却衬底，将多个金刚石颗粒固定到衬底上。 设置在基板上的多个金刚石颗粒被配置为当在CMP工艺中使用调节盘时，提供高于50％的工作金刚石比例。

公开(公告)号：US09120194B2

公开(公告)日：2015-09-01

申请号：US13188028

申请日：2011-07-21

申请人： Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Chun-Ting Kuo

发明人： Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Chun-Ting Kuo

IPC分类号： B24B7/22 ,  B24D7/14

CPC分类号： B24B7/228 ,  B24D7/14

摘要： A grinding wheel comprises an outer base with a first attached grain pad; and an inner frame with a second attached grain pad; and a spindle axis shared by the outer base and the inner frame, wherein at least one of the outer base and the inner frame can move independently along the shared spindle axis; and wherein the outer base, the inner frame, and the shared spindle axis all have a same center. A grinding system comprises an above said grinding wheel, and a wheel head attached to the shared spindle axis, capable of moving vertically, in addition to a motor driving the grinding wheel to spin; and a chuck table for fixing a wafer on top of the chuck table; wherein the grinding wheel overlaps a portion of the chuck table, each capable of spinning to the opposite direction of another.

摘要翻译： 砂轮包括具有第一附接谷物垫的外基部; 以及具有第二附着谷物垫的内框架; 以及由所述外基座和所述内框架共享的主轴，其中所述外基座和所述内框架中的至少一个可以沿着所述共享主轴轴线独立地移动; 并且其中所述外基座，所述内框架和所述共享主轴轴线都具有相同的中心。 研磨系统包括上述砂轮和附接到共享主轴轴线的能够垂直移动的砂轮头，除了驱动砂轮旋转的马达之外， 以及用于将晶片固定在卡盘台顶部的卡盘台; 其中所述砂轮与所述卡盘台的一部分重叠，所述卡盘台的每一个能够沿相反方向旋转。

公开(公告)号：US09064892B2

公开(公告)日：2015-06-23

申请号：US13221160

申请日：2011-08-30

申请人： Wen Chu Hsiao ,  Ju Wen Hsiao ,  Ying Min Chou ,  Hsiang Hsiang Ko ,  Ying-Lang Wang

发明人： Wen Chu Hsiao ,  Ju Wen Hsiao ,  Ying Min Chou ,  Hsiang Hsiang Ko ,  Ying-Lang Wang

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/165

CPC分类号： H01L29/66636 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/30604 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7834 ,  H01L29/7848

摘要： A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition.

摘要翻译： 半导体结构及其形成方法提供适合用作源极/漏极区域或其它有源器件的高迁移率应力源材料。 该结构形成在衬底开口中，并且在上部掺杂有诸如硼的杂质，但是在与开口的表面接触的区域中不含杂质。 因此，该结构在高温操作期间抵抗掺杂剂杂质的扩散，并且可以通过使用减压化学气相沉积或减压外延沉积的选择性沉积来形成。

公开(公告)号：US09064770B2

公开(公告)日：2015-06-23

申请号：US13551457

申请日：2012-07-17

申请人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

发明人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

IPC分类号： H01L21/02 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L21/02087 ,  H01L21/0209 ,  H01L27/14687

摘要： A method includes forming top metal lines over a semiconductor substrate, wherein the semiconductor substrate is a portion of a wafer having a bevel. When the top metal lines are exposed, an etchant is supplied on the bevel, wherein regions of the wafer sprayed with the etchant has an inner defining line forming a first ring having a first diameter. A trimming step is performed to trim an edge portion of the wafer, wherein an edge of a remaining portion of the wafer has a second diameter substantially equal to or smaller than the first diameter.

摘要翻译： 一种方法包括在半导体衬底上形成顶部金属线，其中半导体衬底是具有斜面的晶片的一部分。 当顶部金属线暴露时，在斜面上提供蚀刻剂，其中用蚀刻剂喷射的晶片的区域具有形成具有第一直径的第一环的内部限定线。 进行修整步骤以修剪晶片的边缘部分，其中晶片的剩余部分的边缘具有基本上等于或小于第一直径的第二直径。

公开(公告)号：US08552529B2

公开(公告)日：2013-10-08

申请号：US13488958

申请日：2012-06-05

申请人： Jung-Chih Tsao ,  Yu-Sheng Wang ,  Kei-Wei Chen ,  Ying-Lang Wang

发明人： Jung-Chih Tsao ,  Yu-Sheng Wang ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC分类号： H01L21/02

CPC分类号： H01L27/0805 ,  H01L28/60 ,  H01L28/75

摘要： A semiconductor device is disclosed. The device includes a substrate; a first metal layer overlying the substrate; a dielectric layer overlying the first metal layer; and a second metal layer overlying the dielectric layer, wherein the first metal layer comprises: a first body-centered cubic lattice metal layer; a first underlayer, underlying the first body-centered cubic lattice metal layer, wherein the first underlayer is metal of body-centered cubic lattice and includes titanium (Ti), tungsten (W), molybdenum (Mo) or niobium (Nb); and a first interface of body-centered cubic lattice between the first body-centered cubic lattice metal layer and the first underlayer.

摘要翻译： 公开了一种半导体器件。 该装置包括基板; 覆盖衬底的第一金属层; 覆盖在第一金属层上的电介质层; 以及覆盖所述电介质层的第二金属层，其中所述第一金属层包括：第一体心立方晶格金属层; 第一底层，位于第一体心立方晶格金属层下面，其中第一底层是体心立方晶格的金属，包括钛（Ti），钨（W），钼（Mo）或铌（Nb）; 以及在第一体心立方晶格金属层和第一底层之间的体心立方晶格的第一界面。

公开(公告)号：US08551193B2

公开(公告)日：2013-10-08

申请号：US13188182

申请日：2011-07-21

申请人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen

发明人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen

IPC分类号： C22C19/03 ,  H01L21/283

CPC分类号： H01L29/45 ,  C23C14/14 ,  C23C14/3414 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/823418 ,  H01L29/456 ,  H01L29/665 ,  Y10T29/41

摘要： A target includes nickel and a secondary metal. The secondary metal has a volume percentage between about 1 percent and about 10 percent. The secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3.

摘要翻译： 目标包括镍和二次金属。 次级金属的体积百分比在约1％至约10％之间。 二次金属具有约5,000kg / m 3至约15,000kg / m 3的密度。