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    TUNABLE FILTER STRUCTURES AND DESIGN STRUCTURES
    27.
    发明申请
    TUNABLE FILTER STRUCTURES AND DESIGN STRUCTURES 有权
    TUNABLE过滤器结构和设计结构

    公开(公告)号：US20150244345A1

    公开(公告)日：2015-08-27

    申请号：US14700744

    申请日：2015-04-30

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Robert K. LEIDY ,  Anthony K. STAMPER

    IPC: H03H9/54 ,  H03H9/17

    CPC classification number: H03H9/545 ,  H03H9/0547 ,  H03H9/171 ,  H03H9/173 ,  H03H9/56 ,  H03H2009/02204 ,  Y10T29/42

    Abstract: Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.

    Abstract translation: 公开了可调谐滤波器结构，制造方法和设计结构。 形成滤波器结构的方法包括在空腔结构上形成压电谐振滤波器。 压电谐振滤波器的形成包括：在压电材料的一侧上形成上电极; 以及在所述压电材料的相对侧上形成下电极。 该方法还包括在致动时与压电谐振滤波器接触的位置处形成微机电结构（MEMS）悬臂梁。

    AUTOMATED RESIDUAL MATERIAL DETECTION
    28.
    发明申请
    AUTOMATED RESIDUAL MATERIAL DETECTION 有权
    自动残留材料检测

    公开(公告)号：US20150113494A1

    公开(公告)日：2015-04-23

    申请号：US14060098

    申请日：2013-10-22

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Jeffrey C. MALING ,  Anthony K. STAMPER ,  Zeljka TOPIC-BEGANOVIC

    IPC: H01L23/544 ,  G01N23/20 ,  G06F17/50

    CPC classification number: H01L22/30 ,  H01L22/12

    Abstract: Methods, systems, and structures for detecting residual material on semiconductor wafers are provided. A method includes scanning a test structure including topographic features on a surface of a semiconductor wafer. The method further includes determining, based on the scanning, that the test structure includes an amount of a residual material of a sacrificial layer that exceeds a predetermined threshold.

    Abstract translation: 提供了用于检测半导体晶片上的残留材料的方法，系统和结构。 一种方法包括在半导体晶片的表面上扫描包括地形特征的测试结构。 该方法还包括基于扫描确定测试结构包括超过预定阈值的牺牲层的残余材料的量。

    MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) CAPACITIVE OHMIC SWITCH AND DESIGN STRUCTURES
    29.
    发明申请
    MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) CAPACITIVE OHMIC SWITCH AND DESIGN STRUCTURES 有权
    微电子机械系统（MEMS）电容式OHMIC开关和设计结构

    公开(公告)号：US20140231236A1

    公开(公告)日：2014-08-21

    申请号：US14041983

    申请日：2013-09-30

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Hanyi DING ,  Qizhi LIU ,  Anthony K. STAMPER

    IPC: H01H1/00 ,  G06F17/50

    CPC classification number: H01H1/0036 ,  B81B7/0006 ,  B81B2201/016 ,  G06F17/5063 ,  G06F17/5068 ,  H01P1/127

    Abstract: A micro-electro-mechanical system (MEMS), methods of forming the MEMS and design structures are provided. The method includes forming a coplanar waveguide (CPW) comprising a signal electrode and a pair of electrodes on a substrate. The method includes forming a first sacrificial material over the CPW, and a wiring layer over the first sacrificial material and above the CPW. The method includes forming a second sacrificial material layer over the wiring layer, and forming insulator material about the first sacrificial material and the second sacrificial material. The method includes forming at least one vent hole in the insulator material to expose portions of the second sacrificial material, and removing the first and second sacrificial material through the vent hole to form a cavity structure about the wiring layer and which exposes the signal line and pair of electrodes below the wiring layer. The vent hole is sealed with sealing material.

    Abstract translation: 提供了微机电系统（MEMS），形成MEMS和设计结构的方法。 该方法包括在基板上形成包括信号电极和一对电极的共面波导（CPW）。 该方法包括在CPW上形成第一牺牲材料，以及在第一牺牲材料上方和CPW上方的布线层。 该方法包括在布线层上形成第二牺牲材料层，以及围绕第一牺牲材料和第二牺牲材料形成绝缘体材料。 所述方法包括在所述绝缘体材料中形成至少一个通气孔以暴露所述第二牺牲材料的部分，以及通过所述通气孔去除所述第一和第二牺牲材料以形成围绕所述布线层的空腔结构，并且暴露所述信号线和 一对电极在布线层下方。 通气孔用密封材料密封。

    INTEGRATED SEMICONDUCTOR DEVICES WITH AMORPHOUS SILICON BEAM, METHODS OF MANUFACTURE AND DESIGN STRUCTURE
    30.
    发明申请
    INTEGRATED SEMICONDUCTOR DEVICES WITH AMORPHOUS SILICON BEAM, METHODS OF MANUFACTURE AND DESIGN STRUCTURE 有权
    具有非晶硅光束的集成半导体器件，制造方法和设计结构

    公开(公告)号：US20140091407A1

    公开(公告)日：2014-04-03

    申请号：US14096350

    申请日：2013-12-04

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

    IPC: H03H9/02 ,  G06F17/50

    CPC classification number: H03H9/02007 ,  G06F17/5072 ,  H01L21/84 ,  H01L27/1203 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155

    Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam. The method further includes forming a via through the insulator material and exposing a material underlying the amorphous silicon beam. The method further includes providing a sacrificial material in the via and over the amorphous silicon beam. The method further includes providing a lid on the sacrificial material and over the insulator material. The method further includes venting, through the lid, the sacrificial material and the underlying material to form an upper cavity above the amorphous silicon beam and a lower cavity below the amorphous silicon beam, respectively.

    Abstract translation: 公开了与CMOS工艺，制造方法和设计结构集成的体声波滤波器和/或体声波谐振器。 该方法包括形成至少一个包含非晶硅材料的光束并在非晶硅光束上并邻近非晶硅光束提供绝缘体材料。 该方法还包括通过绝缘体材料形成通孔并暴露非晶硅束下面的材料。 该方法还包括在通孔和非晶硅光束上提供牺牲材料。 该方法还包括在牺牲材料上并在绝缘体材料之上提供盖子。 该方法还包括通过盖子排出牺牲材料和下面的材料，以分别在非晶硅束的上方形成上腔，并在非晶硅束的下方形成下腔。

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