Abstract:
The present invention provides a system for evaluating motor control function in the brain. This system is for evaluating the motor control function in the brain of a subject from the electromyogram (EMG) data of joint prime movers and the data on the position, velocity and acceleration of the joint, wherein both of the data have been obtained by measuring a target-tracking movement performed by the subject with a motion measurement unit that tracks a moving target, the system comprising the following means (a) to (c): (a) means for separating the frequencies of the EMG data and the frequencies of the data on the position, velocity and acceleration into a plurality of frequency components; (b) means for determining the ratio of viscosity coefficient to elastic coefficient (B/K ratio) for each of the frequency components by applying the EMG data and the data on the position, velocity and acceleration to a specific movement equation; and (c) means for evaluating the causal relationship between the motor control function in the brain and the target-tacking movement using the B/K ratio as an index.
Abstract:
A semiconductor package may include a substrate including a substrate connection terminal, at least one semiconductor chip stacked on the substrate and having a chip connection terminal, a first insulating layer covering at least portions of the substrate and the at least one semiconductor chip, and/or an interconnection penetrating the first insulating layer to connect the substrate connection terminal to the chip connection terminal. A semiconductor package may include stacked semiconductor chips, edge portions of the semiconductor chips constituting a stepped structure, and each of the semiconductor chips including a chip connection terminal; at least one insulating layer covering at least the edge portions of the semiconductor chips; and/or an interconnection penetrating the at least one insulating layer to connect to the chip connection terminal of each of the semiconductor chips.
Abstract:
A first mold has a core passage, and first and second cavities in fluid communication with each other at the core passage. A second mold has first and second nozzles therein that inject first and second resins to the first and second cavities, respectively. The core member is slidable within the core passage to provide or block the fluid communication between the cavities, and has a third nozzle therein to inject a third resin to the core passage. The first and second resins are injected into the cavities. The core member is moved to block the fluid communication between the cavities, before injecting the first and second resins is completed. The third resin is injected while moving the core member to provide the fluid communication, after injecting the first and second resins is completed. The molds are separated, thereby yielding a single molded product, such as a vehicle door trim.
Abstract:
Provided is a semiconductor package, a semiconductor module and a method for fabricating the semiconductor package. The method provides a substrate including a bonding pad. The method forms a dielectric layer for exposing the bonding pad on the substrate. The method forms a redistribution line which is electrically connected to the bonding pad, on the dielectric layer. The method forms an external terminal which is electrically connected to the bonding pad without using a solder mask which limits a position of the external terminal, on the redistribution line.
Abstract:
A semiconductor package includes a first package including at least one first semiconductor chip; a second package including an external connection terminal and at least one second semiconductor chip, the second package being stacked on the first package; and an interposer disposed between the first and second packages and connected to the external connection terminal to electrically connect the first and second packages to each other. The interposer comprises an intermediate connector having an exposed end portion to which the second package is electrically connected via the external connection terminal and a protruding end portion lower than the exposed end portion to which the first package is electrically connected.
Abstract:
A multi-layer dielectric layer structure for a semiconductor device. The multi-layer dielectric layer structure comprises a silicate interface layer having a dielectric constant greater than that of silicon nitride and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises one or more ordered pairs of first and second layers. With the present invention, the dielectric constant of the high-k dielectric layer can be optimized while improving interface characteristics. With a higher crystallization temperature realized by forming the multi-layer structure, each of whose layers is not more than the critical thickness, leakage current can be reduced, thereby improving device performance.