Abstract:
A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate.
Abstract:
A method of manufacturing a light emitting device includes: preparing a light-transmissive member including a light reflective sheet that has a through-hole, and a color conversion material layer that is composed of a light-transmissive resin containing a color conversion material and disposed in the through-hole, preparing a light emitting element, fixing the color conversion material layer to the light emitting element, covering a side surface of the light emitting element with a light-reflective member, and cutting the light-reflective member and light-reflective sheet.
Abstract:
A light emitting device includes a resin package and a light emitting element. The resin package has a cavity. The resin package includes first and second lead portions and a resin member. The first lead portion includes a first lead side surface and a lead recess portion that extends from the first lead side surface in a direction away from the second lead portion, with a part of the resin member being arranged within the lead recess portion. The light emitting element includes first and second electrodes that respectively face the first and second lead portions. The first electrode includes a first electrode side surface and an electrode recess portion that extends from the first electrode side surface in a direction away from the second electrode. The electrode recess portion is arranged at a position overlapping the lead recess portion in a plan view.
Abstract:
A manufacturing method of a processed resin substrate includes: preparing a resin substrate including a resin layer and a metal layer that covers at least a part of one surface of the resin layer; and forming a through hole in the resin substrate by irradiating the resin substrate with pulsed laser light. In the forming of the through hole, an interval of irradiation of the pulsed laser light at each point on the resin substrate is 5 msec or more.
Abstract:
A light-emitting device may comprise a substrate, an electric wire fixed to the substrate, and a plurality of light-emitting diodes mounted to the electric wire. According to one embodiment, each of the plurality of light-emitting diodes is an LED chip, and the light-emitting diodes on the substrate are sealed individually or collectively by one or more sealing members. According to another embodiment, the substrate has a plurality of through holes, wherein a plurality of portions of the electric wire provided on a rear surface side of the substrate communicates with a front surface side of the substrate at the plurality of through holes of the substrate, and wherein the plurality of light-emitting diodes is respectively mounted to the respective portions of the electric wire that communicate with the front surface side of the substrate. Other embodiments relate to methods of manufacturing a light-emitting device.
Abstract:
The light emitting device is manufactured by processing that includes forming encapsulating member at least on the upper surface and upper surface perimeter of a light emitting element, removing at least the part of the encapsulating member that is on upper surface of the light emitting element and form a cavity with a perimeter that surrounds the light emitting element, and forming a wavelength-conversion layer inside the cavity to convert the wavelength of light emitted from the light emitting element.
Abstract:
A light emitting device includes at least one semiconductor light emitting element, and a wavelength conversion layer which is formed on a surface of the semiconductor light emitting element and which includes a resin layer containing a wavelength conversion member for converting a wavelength of light emitted from the semiconductor light emitting element. The wavelength conversion layer covers an upper surface or the upper surface and a side surface of the semiconductor light emitting element. A content of an inorganic material including the wavelength conversion member, or a content of an inorganic material including the wavelength conversion member and an inorganic filler, in the resin layer is 30% by mass or more and 99% by mass or less.
Abstract:
Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device 100 includes a light emitting element 20 with a supporting body which is composed of a semiconductor light emitting element 1 and a supporting body 10, and a phosphor layer 7 which continuously covers an upper surface and side surfaces of the semiconductor light emitting element 1, and side surfaces of the supporting body 10. The phosphor layer 7 is configured such that at least a lower portion of the side surface of the supporting body 10 is thinner than the upper surface and the side surface of the semiconductor light emitting element 1. Such a configuration of the phosphor layer can be formed by applying a spray-coating of a slurry containing phosphor particles and a thermosetting resin in a solvent on the semiconductor light emitting element 1 side of the light emitting element 20 which has the supporting body.
Abstract:
A light-emitting device may comprise a substrate, an electric wire fixed to the substrate, and a plurality of light-emitting diodes mounted to the electric wire. According to one embodiment, each of the plurality of light-emitting diodes is an LED chip, and the light-emitting diodes on the substrate are sealed individually or collectively by one or more sealing members. According to another embodiment, the substrate has a plurality of through holes, wherein a plurality of portions of the electric wire provided on a rear surface side of the substrate communicates with a front surface side of the substrate at the plurality of through holes of the substrate, and wherein the plurality of light-emitting diodes is respectively mounted to the respective portions of the electric wire that communicate with the front surface side of the substrate. Other embodiments relate to methods of manufacturing a light-emitting device.
Abstract:
A light emitting device has a base comprising at least one pair of leads having a silver-containing layer on their surfaces and being secured by a resin molded body, a light emitting element mounted on said leads, a protective film made of an inorganic material that covers the upper surface of said base, and a sealing resin disposed on the base surface via said protective film. The sealing resin has a first resin that covers said light emitting element, and a second resin having a higher hardness than said first resin that covers the boundaries between said resin molded body and said leads.