摘要:
A laser system having migration enhanced epitaxy grown substantially flat layers proximate to quantum wells of an active region. The flat layers may be grown at low temperature. This growth may result in flatter interfaces in the nitrogen containing quantum wells within the active region as well as lower trap densities in adjacent material. This may achieve a reduced trap density as well as reduced segregation resulting in a spectral luminescence profile revealing a single narrow peak with a high level of photoluminescence.
摘要:
Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V before, and/or after, and/or in-between quantum wells. Where GaAs is used, the process can be accomplished by alternately opening and closing Ga and As shutters in an MBE system, while preventing both from being open at the same time. Where nitrogen is used, the system incorporates a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.
摘要:
Light scattered from illuminated spot on a patterned wafer is first passed through a di-electric filter and then by an optical fiber bundle to a detector. The di-electric filter controls the aperture of the light that is passed to a desired azimuth angle and the optical fiber further limits the aperture.
摘要:
There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means. To function most efficiently there is also a vacuum means for evacuating and repressurizing a chamber containing the substrate. The vacuum means can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum means can simultaneously evacuate a plurality of substrates prior to inspection and repressurize of the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison means for comparing the pattern on the substrate with a second pattern.
摘要:
Systems and methods for automatic throttling of resources in an information handling system are disclosed. A method may include determining whether a first throttling condition exists, the first throttling condition existing when a chassis management controller fails to communicate a clock or synchronization signal to one or more devices in an information handling system chassis for a particular duration of time. The method may also include determining whether a second throttling condition exists, the second throttling condition existing when the chassis management controller fails to communicate data to one or more devices in the information system handling chassis. The method may further include throttling a resource in the information handling system chassis if at least one of the first throttling condition and the second throttling condition exists.
摘要:
Systems and methods for automatic throttling of resources in an information handling system are disclosed. A method may include determining whether a first throttling condition exists, the first throttling condition existing when a chassis management controller fails to communicate a clock or synchronization signal to one or more devices in an information handling system chassis for a particular duration of time. The method may also include determining whether a second throttling condition exists, the second throttling condition existing when the chassis management controller fails to communicate data to one or more devices in the information system handling chassis. The method may further include throttling a resource in the information handling system chassis if at least one of the first throttling condition and the second throttling condition exists.
摘要:
A lamp component has a support with a base surrounded by an interior wall defining a cavity with a central axis. A plurality of LEDs are supported on the interior wall and generally aimed to direct light towards the central axis. A center piece has a first reflective surface shaped and positioned to intercept light received from the LEDs and reflect such received light generally in a direction parallel to the axis.
摘要:
Semiconductors with enhanced strain. One embodiment includes a semiconductor device. The semiconductor device may include an epitaxial structure. The epitaxial structure includes one or more semiconductor layers and dielectric layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial growth to form periods where surfaces are group III rich.
摘要:
Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using controlled group V fluxes and temperatures. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V materials at a given group V flux and then raising the group V flux to saturate the surface of the flattening layer with the group V material. A cap layer is also formed over the quantum well. Where nitrogen is used, the systems incorporate a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.
摘要:
An LED light source (10) has a housing (12) with a base (14) and a hollow core (16) projecting from the base (14), the core (16) being substantially conical. A first printed circuit board (18) is fitted to the base (14). A second printed circuit board (20) is fitted to the narrow end (22) of the core (16), the second printed circuit board (20) having at least one LED (24) operatively fixed thereto. A plurality of electrical conductors 26 is provided having proximal ends (28) attached to and extending from the second printed circuit board (20) and distal ends (30) attached to and projecting through the first printed circuit board (18). A cap (32) is fitted over the second printed circuit board (20) and a heat sink (34) is attached to the base (14) and in contact with the distal ends (30) of the electrical conductors (26). The housing (12) is provided with flanges for engaging a suitable opening in the rear of a reflector.