公开(公告)号：US09515217B2

公开(公告)日：2016-12-06

申请号：US14179526

申请日：2014-02-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  Michael Wingert

IPC: H01L31/18 ,  H01L31/0224 ,  H01L27/142 ,  H01L31/05

CPC classification number: H01L31/18 ,  H01L27/1421 ,  H01L31/02245 ,  H01L31/0516 ,  Y02E10/50

Abstract: According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.

Abstract translation: 根据所公开的主题的一个方面，提供了一种形成一体式背面接触背面太阳能电池的方法。 发射极和基极接触区形成在具有光接收前侧和与前侧相对的背面的半导体晶片的背面。 第一层接触金属化形成在晶片背面，并且电绝缘底板附着到半导体晶片背面。 在将半导体晶片图案化成多个电隔离岛的半导体晶片中形成隔离沟槽，并且半导体晶片变薄。 在电绝缘背板上形成电连接多个岛的金属化结构。

公开(公告)号：US09196759B2

公开(公告)日：2015-11-24

申请号：US14629273

申请日：2015-02-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/056

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触式太阳能电池及制造方法。 背接触背面太阳能电池包括具有钝化层的光捕获前侧表面的衬底，掺杂的基极区域和具有极性与掺杂基极区域相反的掺杂背侧发射极区域。 背面钝化层和发射体上的图案化反射层形成光阱背面反射镜。 交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。

公开(公告)号：US20150315719A1

公开(公告)日：2015-11-05

申请号：US14679731

申请日：2015-04-06

Applicant: SOLEXEL, INC.

Inventor： George D. Kamian ,  Somnath Nag ,  Subbu Tamilmani ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Takao Yonehara

IPC: C25D17/00

CPC classification number: C25D11/32 ,  C25D11/005 ,  C25D17/001 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L31/1892 ,  Y02E10/50

Abstract: This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract translation: 本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体 孔隙度多孔半导体如多孔硅），用于防反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如，通过形成可变带隙 晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。 其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。 此外，本公开可应用于光伏，MEMS（包括传感器和致动器）的独立或集成半导体微电子，半导体微电子芯片和光电子学的一般领域。

公开(公告)号：US20140146854A1

公开(公告)日：2014-05-29

申请号：US13866990

申请日：2013-04-19

Applicant: Solexel, Inc.

Inventor： Jay Ashjaee ,  Karl-Josef Kramer ,  Mehrdad M. Moslehi

IPC: G01K7/02

CPC classification number: G01K7/02 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67098 ,  H01L21/67248

Abstract: Non-contact and non-invasive temperature measurement structures and methods for thermal processing systems which neither damage nor contaminate the thermal processing environment are provided.

Abstract translation: 提供了不损坏或污染热处理环境的热处理系统的非接触和非侵入性温度测量结构和方法。

公开(公告)号：US20130288425A1

公开(公告)日：2013-10-31

申请号：US13852966

申请日：2013-03-28

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  Mehrdad M. Moslehi ,  Pranav Anbalagan ,  Heather Deshazer ,  Solene Coutant ,  Benjamin E. Rattle ,  Karl-Josef Kramer ,  Pawan Kapur

IPC: H01L31/18

CPC classification number: H01L31/186 ,  B23K26/009 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/389 ,  B23K26/40 ,  B23K2103/172 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1892 ,  Y02E10/547

Abstract: Methods and structures for fabricating photovoltaic back contact solar cells having multi-level metallization using laser via drilling end point detection are provided.

Abstract translation: 提供了使用激光经钻孔终点检测制造具有多层金属化的光伏背接触太阳能电池的方法和结构。

公开(公告)号：US20130241038A1

公开(公告)日：2013-09-19

申请号：US13897323

申请日：2013-05-17

Applicant: Solexel, Inc.

Inventor： Suketu Parikh ,  David Dutton ,  Pawan Kapur ,  Somnath Nag ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Nevran Ozguven ,  Burcu Ucok

IPC: H01L29/06 ,  H01L21/02

CPC classification number: H01L29/0692 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02664 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T29/53265

Abstract: A structure and method operable to create a reusable template for detachable thin semiconductor substrates is provided. The template has a shape such that the 3-D shape is substantially retained after each substrate release. Prior art reusable templates may have a tendency to change shape after each subsequent reuse; the present disclosure aims to address this and other deficiencies from the prior art, therefore increasing the reuse life of the template.

Abstract translation: 提供了一种用于为可分离的薄半导体衬底创建可重用模板的结构和方法。 模板具有使得在每个基底释放之后基本保持3-D形状的形状。 现有技术的可再利用模板可能在每次后续重用之后具有改变形状的趋势; 本公开旨在解决现有技术的这种和其他缺陷，因此增加了模板的重用寿命。