公开(公告)号：US09466949B1

公开(公告)日：2016-10-11

申请号：US14857719

申请日：2015-09-17

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/02 ,  H01S5/22 ,  H01S5/343 ,  H01S5/227 ,  H01S5/32 ,  H01L21/02 ,  H01S5/30 ,  H01S5/042 ,  H01S5/10

CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

公开(公告)号：US20150229100A1

公开(公告)日：2015-08-13

申请号：US14176403

申请日：2014-02-10

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/02

CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.

Abstract translation: 在一个实例中，本发明提供一种制造含镓和氮的激光二极管器件的方法。 该方法包括提供具有表面区域并形成覆盖在表面区域上的外延材料的含镓和氮的衬底，所述外延材料包括n型包层区域，有源区域包括覆盖在n型包层上的至少一个有源层 区域和覆盖有源层区域的p型覆层区域。 该方法包括图案化外延材料以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 该方法包括将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于对应于设计宽度的第一间距。

公开(公告)号：US20150140710A1

公开(公告)日：2015-05-21

申请号：US14559149

申请日：2014-12-03

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/042 ,  H01S5/22 ,  H01S5/02

CPC classification number: H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US20210018161A1

公开(公告)日：2021-01-21

申请号：US16923476

申请日：2020-07-08

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Melvin McLaurin ,  Troy Trottier ,  Steven DenBaars

IPC: F21V9/32 ,  H01S5/062 ,  H01S5/343 ,  H01S5/00 ,  H01S5/34 ,  H01S5/022 ,  F21V7/30 ,  H01S5/40 ,  G02B27/09 ,  H04B10/116 ,  H04B10/50

Abstract: A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

公开(公告)号：US10854777B1

公开(公告)日：2020-12-01

申请号：US16796183

申请日：2020-02-20

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L33/00 ,  H01L29/205 ,  H01L33/06 ,  H01L29/66 ,  H01L23/00 ,  H01L33/32 ,  H01S5/02 ,  H01L21/311 ,  H01L21/683 ,  H01L27/06 ,  H01L27/12 ,  H01L21/02 ,  H01L29/20 ,  H01L27/088 ,  H01L27/15 ,  H01S5/227 ,  H01S5/343

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US20200374004A1

公开(公告)日：2020-11-26

申请号：US16783513

申请日：2020-02-06

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H04B10/116 ,  H01S5/343 ,  G02B27/09 ,  H04B10/50 ,  H01S5/022 ,  H01S5/40 ,  H01S5/00

Abstract: A packaged integrated white light source configured for illumination and communication or sensing comprises one or more laser diode devices. An output facet configured on the laser diode device outputs a laser beam of first electromagnetic radiation with a first peak wavelength. The first wavelength from the laser diode provides at least a first carrier channel for a data or sensing signal.

公开(公告)号：US10718491B1

公开(公告)日：2020-07-21

申请号：US16512903

申请日：2019-07-16

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Melvin McLaurin ,  Troy Trottier ,  Steven DenBaars

IPC: F21V9/32 ,  H01S5/062 ,  H01S5/343 ,  H01S5/00 ,  H01S5/34 ,  H01S5/022 ,  F21V7/30 ,  H01S5/40 ,  G02B27/09 ,  H04B10/116 ,  H04B10/50 ,  G01S7/481 ,  F21Y113/13 ,  H01S5/028 ,  H01S5/10 ,  H01L33/00 ,  F21V29/502 ,  G02B26/08 ,  F21Y115/30 ,  G02B26/10 ,  F21V29/70 ,  H01L33/50 ,  H01L33/32 ,  H01S5/22 ,  H01S5/042 ,  H01S5/02 ,  H01S5/024

Abstract: A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

公开(公告)号：US10651629B1

公开(公告)日：2020-05-12

申请号：US16252833

申请日：2019-01-21

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/02 ,  H01S5/343 ,  H01L21/02 ,  H01S5/22 ,  H01S5/227 ,  H01S5/30 ,  H01S5/10 ,  H01S5/042 ,  H01S5/32

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

公开(公告)号：US20200099196A1

公开(公告)日：2020-03-26

申请号：US16586100

申请日：2019-09-27

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US10439364B2

公开(公告)日：2019-10-08

申请号：US15694641

申请日：2017-09-01

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/00 ,  H01S5/022 ,  H01S5/40

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.