公开(公告)号：US07436046B2

公开(公告)日：2008-10-14

申请号：US11242961

申请日：2005-10-05

申请人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

发明人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

IPC分类号： H01L31/117

CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.

摘要翻译： 提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。 在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。 因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。 在位于栅电极末端并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×10 19 cm -3， -3以下。

公开(公告)号：US20110018032A1

公开(公告)日：2011-01-27

申请号：US12894609

申请日：2010-09-30

申请人： Masao KONDO ,  Nobuyuki Sugii ,  Yoshinobu Kimura

发明人： Masao KONDO ,  Nobuyuki Sugii ,  Yoshinobu Kimura

IPC分类号： H01L29/78

CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

摘要： A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the strained silicon layer and silicon-germanium layer.

摘要翻译： 提供一种半导体器件，其能够抑制在应变硅层中形成的沟道区域中的电子迁移率的降低。 在半导体衬底上形成的p型硅 - 锗层上形成应变硅层。 应变层的厚度被调整为比不发生失配位错的临界膜厚度更厚。 因此，失配位错发生在应变硅层和硅 - 锗层之间的界面附近。

公开(公告)号：US07868425B2

公开(公告)日：2011-01-11

申请号：US12251081

申请日：2008-10-14

申请人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

发明人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

IPC分类号： H01L31/117

CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.

摘要翻译： 提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。 在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。 因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。 在低于栅电极的端部并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×1019cm-3以下。

公开(公告)号：US06529304B1

公开(公告)日：2003-03-04

申请号：US09381199

申请日：1999-09-17

申请人： Yoshinobu Kimura ,  Masanobu Miyao ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Takuya Maruizumi

发明人： Yoshinobu Kimura ,  Masanobu Miyao ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Takuya Maruizumi

IPC分类号： H04B1000

CPC分类号： H04B10/564 ,  G02B6/3636 ,  G02B6/3652 ,  G02B6/4202 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/1228 ,  H04B10/291 ,  H04B10/504

摘要： Configurations of a light signal communication apparatus and an optical communication system suitable for speeding-up of the transmission of information based on a light signal and an increase in the capacity for the information transmission are disclosed. On the light signal transmitting side, excitation light is supplied to an active medium in accordance with a transmission signal to cause induced emission within the active medium, thereby generating signal light. The excitation light causes spontaneously-emitted light to fall on a semiconductor layer, and a voltage pulse corresponding to transmission information is applied to modulate the refractive index of the semiconductor layer, thereby Bragg-reflecting a specific wavelength component, after which it is sent to the active medium as the excitation light. The Bragg reflection and induced emission incident to it exhibit excellent response to a voltage signal having a pulse width of 1×10−9 seconds or less. It is therefore possible to implement an optical communication system having a transmission rate up to 100 Gb/s with one light signal.

摘要翻译： 公开了一种适于基于光信号加速信息传输和信息传输容量增加的光信号通信装置和光通信系统的配置。 在光信号发送侧，根据发送信号将激励光提供给有源介质，以在有源介质内产生感应发射，从而产生信号光。 激发光引起自发发射的光落在半导体层上，施加与透射信息相对应的电压脉冲，以调制半导体层的折射率，由此布拉格反射特定波长分量，之后将其发送到 活性介质作为激发光。 入射到其的布拉格反射和感应发射对脉冲宽度为1×10-9秒或更小的电压信号表现出优异的响应。 因此，可以通过一个光信号实现具有高达100Gb / s的传输速率的光通信系统。

公开(公告)号：US20110227116A1

公开(公告)日：2011-09-22

申请号：US13129115

申请日：2009-10-21

申请人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

发明人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

IPC分类号： H01L33/34 ,  H01L33/60 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01S5/3201 ,  H01L31/103 ,  H01L31/1808 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3223 ,  Y02E10/50

摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

摘要翻译： 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。

公开(公告)号：US08680553B2

公开(公告)日：2014-03-25

申请号：US13129115

申请日：2009-10-21

申请人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawara

发明人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawara

IPC分类号： H01L33/34

CPC分类号： H01S5/3201 ,  H01L31/103 ,  H01L31/1808 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3223 ,  Y02E10/50

摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

摘要翻译： 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄型半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。

公开(公告)号：US20080203403A1

公开(公告)日：2008-08-28

申请号：US11960680

申请日：2007-12-19

申请人： Takayuki Kawahara ,  Masanao Yamaoka ,  Nobuyuki Sugii

发明人： Takayuki Kawahara ,  Masanao Yamaoka ,  Nobuyuki Sugii

IPC分类号： H01L33/00 ,  H01L27/12

CPC分类号： H01L21/84 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1203 ,  H01L27/153

摘要： The semiconductor integrated circuit (1) has a memory (4) and a logic circuit (5), which are mixedly palletized on a silicon substrate (2). The memory includes a partially-depleted type nMOS (6) having an SOI structure and formed on UTB (3). The partially-depleted type nMOS has a backgate region (14) under UTB, to which a voltage can be applied independently of a corresponding gate terminal. The logic circuit includes an nMOS (7) and a pMOS (8), and both are of a fully-depleted type, formed on UTB and have an SOI structure. The fully-depleted type nMOS and pMOS have backgate regions (14, 22) under respective UTBs, to which voltages can be applied independently of the corresponding gate terminals

摘要翻译： 半导体集成电路（1）具有在硅衬底（2）上混合堆垛的存储器（4）和逻辑电路（5）。 存储器包括具有SOI结构并形成在UTB（3）上的部分耗尽型nMOS（6）。 部分耗尽型nMOS在UTB之下具有背栅区域（14），独立于对应的栅极端子可以施加电压。 逻辑电路包括nMOS（7）和pMOS（8），并且它们都是完全耗尽型的，形成在UTB上并具有SOI结构。 完全耗尽型nMOS和pMOS在相应的UTB下具有背栅区域（14,22），可以独立于对应的栅极端子施加电压

公开(公告)号：US20080111134A1

公开(公告)日：2008-05-15

申请号：US11969488

申请日：2008-01-04

申请人： Shinya Yamaguchi ,  Masanobu Miyao ,  Nobuyuki Sugii ,  Seang-kee Park ,  Kiyokazu Nakagawa

发明人： Shinya Yamaguchi ,  Masanobu Miyao ,  Nobuyuki Sugii ,  Seang-kee Park ,  Kiyokazu Nakagawa

IPC分类号： H01L29/10 ,  H01L21/00

CPC分类号： H01L29/78696 ,  G09G3/3648 ,  G09G2300/0408 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/045 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675 ,  H01L29/78678

摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.

摘要翻译： 为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。 通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。

公开(公告)号：US06903372B1

公开(公告)日：2005-06-07

申请号：US09698274

申请日：2000-10-30

申请人： Shinya Yamaguchi ,  Masanobu Miyao ,  Nobuyuki Sugii ,  Seang-kee Park ,  Kiyokazu Nakagawa

发明人： Shinya Yamaguchi ,  Masanobu Miyao ,  Nobuyuki Sugii ,  Seang-kee Park ,  Kiyokazu Nakagawa

IPC分类号： G02F1/136 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/417 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/78696 ,  G09G3/3648 ,  G09G2300/0408 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/045 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675 ,  H01L29/78678

摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.

摘要翻译： 为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。 通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。

公开(公告)号：US06897129B2

公开(公告)日：2005-05-24

申请号：US10440102

申请日：2003-05-19

申请人： Yasuichi Kondo ,  Wataru Hirasawa ,  Nobuyuki Sugii

发明人： Yasuichi Kondo ,  Wataru Hirasawa ,  Nobuyuki Sugii

IPC分类号： C23C16/42 ,  C23C16/44 ,  C23C16/455 ,  C30B25/00 ,  H01L21/20 ,  H01L21/205 ,  H01L29/78

CPC分类号： C23C16/45506 ,  C23C16/22 ,  C23C16/45523 ,  C23C16/45563 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/52 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/2807 ,  H01L29/1054 ,  H01L29/66575 ,  H01L29/78

摘要： Gases for film formation are introduced from a plurality of holes provided at a gas nozzle into a processing chamber of a batch-type CVD film-forming apparatus to cause a turbulence of the gases within the processing chamber. In the state where the chamber is kept at a pressure within an atmospheric and quasi-atmospheric pressure region, a silicon-germanium film is epitaxially grown on a semiconductor wafer placed within the processing chamber. Subsequently, a strained silicon film is epitaxially grown on the silicon-germanium film. Thereafter, a semiconductor element is formed in the semiconductor wafer on which the silicon-germanium film and the strained silicon film have been formed, respectively.