公开(公告)号：US20110202697A1

公开(公告)日：2011-08-18

申请号：US12671982

申请日：2008-04-25

申请人： Hiroaki Inoue ,  Takashi Miyazaki

发明人： Hiroaki Inoue ,  Takashi Miyazaki

IPC分类号： G06F13/16

CPC分类号： G06F15/16 ,  G06F11/1641

摘要： An information processor includes: a plurality of master cores, a plurality of slave cores, a plurality of slave adapters each connected to a respective slave core of the plurality of slave cores, and an interconnected network for connecting the master cores and slave adapters by way of a plurality of router nodes. The slave adapters compare a first access request transmitted by a first master core among the plurality of master cores and a second access request transmitted by a second master core other than the first master core among the plurality of master cores based on a request from the first master core and a request from the second master core, and transmit the first access request or the second access request to the slave core that is connected to the slave adapter when the first access request and the second access request match.

摘要翻译： 信息处理器包括：多个主核心，多个从核心，多个从属适配器，每个从属适配器连接到多个从核心的相应从核心;以及互连网络，用于通过方式连接主核心和从属适配器 的多个路由器节点。 所述从属适配器基于来自所述第一主核心的请求，比较所述多个主核心中的第一主核心发送的第一访问请求以及由所述多个主核心中的除所述第一主核心之外的第二主核心所发送的第二访问请求 主核心和来自第二主核心的请求，并且当第一访问请求和第二访问请求匹配时，将第一访问请求或第二访问请求发送到连接到从属适配器的从核心。

公开(公告)号：US07732990B2

公开(公告)日：2010-06-08

申请号：US11683755

申请日：2007-03-08

申请人： Michihiko Nishigaki ,  Toshihiko Nagano ,  Takashi Miyazaki ,  Kazuhiko Itaya ,  Takashi Kawakubo

发明人： Michihiko Nishigaki ,  Toshihiko Nagano ,  Takashi Miyazaki ,  Kazuhiko Itaya ,  Takashi Kawakubo

IPC分类号： H01L41/08

CPC分类号： B81B3/0072 ,  B81B2201/032 ,  H01G5/18 ,  H01H57/00 ,  H01H2057/006 ,  H01L41/094

摘要： A MEMS device includes: a first actuator having a first fixed end, including a stacked structure of a first lower electrode, a first piezoelectric film, and a first upper electrode, and being able to be operated by applying voltages to the first lower electrode and the first upper electrode; a second actuator having a second fixed end, being disposed in parallel with the first actuator, including a stacked structure of a second lower electrode, a second piezoelectric film, and a second upper electrode, and being able to be operated by applying voltages to the second lower electrode and the second upper electrode; and an electric circuit element having a first action part connected to the first actuator and a second action part connected to the second actuator.

摘要翻译： MEMS器件包括：第一致动器，具有第一固定端，包括第一下电极，第一压电膜和第一上电极的堆叠结构，并且能够通过向第一下电极施加电压而操作， 第一上电极; 具有第二固定端的第二致动器，与所述第一致动器平行设置，包括第二下电极，第二压电膜和第二上电极的堆叠结构，并且能够通过向所述第二致动器施加电压而被操作 第二下电极和第二上电极; 以及具有连接到第一致动器的第一作用部分和连接到第二致动器的第二作用部分的电路元件。

公开(公告)号：US20090051029A1

公开(公告)日：2009-02-26

申请号：US12257689

申请日：2008-10-24

申请人： Yoichiro KURITA ,  Rieka Ouchi ,  Takashi Miyazaki ,  Toshiyuki Yamada

发明人： Yoichiro KURITA ,  Rieka Ouchi ,  Takashi Miyazaki ,  Toshiyuki Yamada

IPC分类号： H01L23/488 ,  H01L21/56 ,  H01L21/58

CPC分类号： H01L25/50 ,  H01L21/563 ,  H01L24/29 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A flip-chip type semiconductor device includes a semiconductor substrate. A plurality of electrode terminals are provided and arranged on a top surface of the semiconductor substrate, a sealing resin layer is formed on the top surface of the semiconductor substrate such that the electrode terminals are completely covered with the sealing resin layer.

摘要翻译： 倒装芯片型半导体器件包括半导体衬底。 多个电极端子设置并布置在半导体衬底的顶表面上，在半导体衬底的顶表面上形成密封树脂层，使得电极端子被密封树脂​​层完全覆盖。

公开(公告)号：US20080067467A1

公开(公告)日：2008-03-20

申请号：US11980450

申请日：2007-10-31

申请人： Yoshihiro Kato ,  Yoshinori Ito ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Masaki Orihashi ,  Makoto Suzuki ,  Takashi Miyazaki

发明人： Yoshihiro Kato ,  Yoshinori Ito ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Masaki Orihashi ,  Makoto Suzuki ,  Takashi Miyazaki

IPC分类号： H01F1/00

CPC分类号： H05K9/0075

摘要： An electromagnetism suppressing material has an increased electromagnetism suppressing effect, can be flexibly formed in various shapes, and is inexpensive. An electromagnetism suppressing device uses the electromagnetism suppressing material, and an electronic appliance uses the electromagnetism suppressing material or the electromagnetism suppressing device. The electromagnetism suppressing material is a liquid material and/or gel material with electrical polarity.

摘要翻译： 电磁抑制材料具有增加的电磁抑制效果，可以灵活地形成各种形状，并且便宜。 电磁抑制装置使用电磁抑制材料，电子设备使用电磁抑制材料或电磁抑制装置。 电磁抑制材料是具有电极性的液体材料和/或凝胶材料。

公开(公告)号：US20060063110A1

公开(公告)日：2006-03-23

申请号：US10944189

申请日：2004-09-20

申请人： Hideo Kiyoyama ,  Yutaka Araki ,  Takashi Miyazaki ,  Akira Furukawa ,  Kenji Hirata

发明人： Hideo Kiyoyama ,  Yutaka Araki ,  Takashi Miyazaki ,  Akira Furukawa ,  Kenji Hirata

IPC分类号： G03F7/00

CPC分类号： B41N3/034 ,  B41C1/1008 ,  B41C2210/04 ,  B41C2210/06 ,  B41C2210/22 ,  B41C2210/24 ,  B41N3/038

摘要： There is disclosed a process for preparing a negative type light-sensitive lithographic printing plate having an aluminum plate as a support and a light-sensitive layer, provided on the support, containing a polymer, an ethylenically unsaturated compound, a photopolymerization initiator and a sensitizer having an absorption at a wavelength region of from visible light to infrared rays, which comprises subjecting the aluminum support after anodization treatment to a treatment in a solution containing potassium silicate and having a molar ratio of SiO2/M2O where M represents an alkali metal being in the range of 0.3 to 3.5.

摘要翻译： 公开了一种制备负极型感光平版印刷版的方法，其具有铝板作为载体，并且在载体上设置有含有聚合物，烯属不饱和化合物，光聚合引发剂和敏化剂的感光层 在可见光到红外线的波长区域具有吸收，其包括在阳极氧化处理之后使铝载体在含有硅酸钾的溶液中并且具有SiO 2 / M / M的摩尔比 其中M表示碱金属在0.3-3.5的范围内。

公开(公告)号：US20060012038A1

公开(公告)日：2006-01-19

申请号：US11172783

申请日：2005-07-05

申请人： Takashi Miyazaki ,  Takuo Funaya

发明人： Takashi Miyazaki ,  Takuo Funaya

IPC分类号： H01L21/44 ,  H01L23/52

CPC分类号： H01L24/10 ,  H01L21/563 ,  H01L24/13 ,  H01L24/28 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81141 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06582 ,  H01L2225/06593 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

摘要： A reliable semiconductor device including support bumps so as to adequately seal the region between the chips is to be provided. The semiconductor device includes a semiconductor chip; a bump formed on an upper face of the semiconductor chip; and a plurality of support bumps formed along a circumference of the region where the bump is provided, formed on the upper face of the semiconductor chip; and a flow path for a sealing resin is provided between the plurality of support bumps, so as to connect the region where the bump is provided and a periphery region of the semiconductor chip.

摘要翻译： 提供包括支撑凸块以便充分密封芯片之间的区域的可靠的半导体器件。 半导体器件包括半导体芯片; 形成在所述半导体芯片的上表面上的凸块; 以及形成在所述半导体芯片的上表面上的沿着设置所述凸块的区域的圆周形成的多个支撑凸块; 并且在多个支撑凸块之间设置用于密封树脂的流动路径，以便连接设置凸点的区域和半导体芯片的外围区域。

公开(公告)号：US06692686B1

公开(公告)日：2004-02-17

申请号：US09557572

申请日：2000-04-25

申请人： Toshiaki Gonda ,  Hideo Miura ,  Hiroshi Noma ,  Takashi Miyazaki

发明人： Toshiaki Gonda ,  Hideo Miura ,  Hiroshi Noma ,  Takashi Miyazaki

IPC分类号： B29C4904

CPC分类号： B29C49/32 ,  B29C49/04 ,  B29C49/16 ,  B29C49/2408 ,  B29C49/421 ,  B29C49/4236 ,  B29C49/66 ,  B29C49/72 ,  B29C2049/2412 ,  B29C2049/2449 ,  B29C2049/2456 ,  B29C2049/325 ,  B29C2049/5875 ,  B29C2049/6027 ,  B29C2049/6036 ,  B29C2049/6615

摘要： A blow molding method includes steps of moving a split mold to a parison receiving position where a parison is supplied and receiving a parison, closing the split mold, performing blow molding at a blow molding position, and opening the split mold at a product discharge position and thereby discharging a product. The method further includes steps of: sequentially reciprocating each split mold in trains of split molds provided opposed to each other across the parison receiving position to and from a position opposed to the parison receiving position; and sequentially reciprocating the split mold disposed at the position where the split mold is opposed to the parsion receiving position to and from the parison receiving position for performing blow molding. There is also provided a blow molding apparatus for carrying out this molding method.

摘要翻译： 吹塑成型方法包括以下步骤：将分型模移动到型坯接收位置，在型坯接收位置供给型坯，接收型坯，闭合分模，在吹塑成型位置进行吹塑成型，并在产品排出位置打开分模 从而排出产品。 该方法还包括以下步骤：顺序地将分开的模具中的每个分割模具往相互对置的分型模具的列中相对地穿过所述型坯接收位置并从与所述型坯接收位置相对的位置移动; 并且将配置在与模型接收位置相对的位置处的分割模具依次往往与用于进行吹塑成形的型坯接收位置往复运动。 还提供了一种用于实施该成型方法的吹塑装置。

公开(公告)号：US06597741B1

公开(公告)日：2003-07-22

申请号：US09718204

申请日：2000-11-21

申请人： Takashi Miyazaki

发明人： Takashi Miyazaki

IPC分类号： H04N704

CPC分类号： H04N19/00 ,  H04N19/70 ,  H04N19/895

摘要： A video decoding apparatus receives a compressed digital video signal containing a sequence header and at least one coded picture. A coded sequence data contained in the header is decoded and stored in a memory. A video decoding process is performed on the coded picture. During this process a first macroblock count is produced to represent the number of macroblocks contained in the decoded picture and the decoding process is suspended. A second macroblock count is then determined from picture size data in the memory and compared with the first macroblock count. The video decoding process by using the stored sequence data is resumed immediately after the first and second macroblock counts are determined to be equal to each other. Otherwise, this decoding process is delayed until the sequence data of the memory is corrected with data representing an estimated picture size.

摘要翻译： 视频解码装置接收包含序列头部和至少一个编码图像的压缩数字视频信号。 包含在标题中的编码序列数据被解码并存储在存储器中。 对编码图像执行视频解码处理。 在该过程中，产生第一宏块计数以表示解码图像中包含的宏块的数量，并且解码处理被暂停。 然后从存储器中的图像尺寸数据确定第二宏块计数，并与第一宏块计数进行比较。 在确定第一和第二宏块计数彼此相等之后，立即重新开始使用存储的序列数据的视频解码处理。 否则，该解码处理被延迟，直到用表示估计图像大小的数据校正存储器的序列数据。

公开(公告)号：US06597070B2

公开(公告)日：2003-07-22

申请号：US09770458

申请日：2001-01-29

申请人： Takashi Miyazaki

发明人： Takashi Miyazaki

IPC分类号： G01L2348

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3731 ,  H01L23/3737 ,  H01L24/11 ,  H01L24/12 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/04105 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2224/75252 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2224/05599

摘要： A semiconductor device includes a passivation film (19) having opening portions through which an electrode pads (18) formed on a semiconductor chip (21) are exposed, projecting electrode portions (20) whose one end faces are connected to the electrode pads (18) through the opening portions, post electrode portions (16A) through which the other end faces of the projecting electrode portions (20) and the metal bumps (26) are connected to each other, and an insulating resin layer (13) having elasticity which covers the post electrode portions (16A), the projecting electrode portions (20) and the passivation film (19) with the exception of the end faces of the post electrode portions (16A).

摘要翻译： 半导体器件包括具有开口部分的钝化膜（19），形成在半导体芯片（21）上的电极焊盘（18）暴露在其中，一端面的电极部分（20）连接到电极焊盘 ）通过开口部分，突出电极部分（20）的另一个端面和金属凸块（26）彼此连接的电极部分（16A）和具有弹性的绝缘树脂层（13） 除了柱状电极部分（16A）的端面之外，还覆盖电极部分（16A），突出电极部分（20）和钝化膜（19）。

公开(公告)号：US06503779B2

公开(公告)日：2003-01-07

申请号：US09866404

申请日：2001-05-25

申请人： Takashi Miyazaki

发明人： Takashi Miyazaki

IPC分类号： H01L2160

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/13 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/023 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/11003 ,  H01L2224/1111 ,  H01L2224/12105 ,  H01L2224/13 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/75252 ,  H01L2224/75743 ,  H01L2224/81801 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/11

摘要： A flip chip type semiconductor device is provided with a semiconductor chip with a plurality of pad electrodes on one surface. A solder electrode is connected to each pad electrode and a metallic post is connected to each solder electrode. The surface of the semiconductor chip on a side on which the pad electrodes are provided is coated with an insulating resin layer and whole the pad electrode and solder electrode and part of the metallic post are buried in the insulating resin layer. The remaining portion of the metallic post is projected from the insulating resin layer to for a protrusion. Then, an outer solder electrode is formed so as to cover this protrusion. The outer solder electrodes are arranged in a matrix on the insulating resin layer. The height of the protrusion is made 7 to 50% of the distance between an end of the outer solder electrode and the surface of the insulating resin layer.

摘要翻译： 倒装芯片型半导体器件在一个表面上设置有具有多个焊盘电极的半导体芯片。 焊接电极连接到每个焊盘电极，并且金属柱连接到每个焊料电极。 在设置有焊盘电极的一侧上的半导体芯片的表面涂覆有绝缘树脂层，并且整个焊盘电极和焊料电极以及金属柱的一部分被埋在绝缘树脂层中。 金属柱的剩余部分从绝缘树脂层突出到突起。 然后，形成外部焊料电极以覆盖该突起。 外部焊料电极以绝缘树脂层的矩阵形式布置。 突出部的高度为外部焊料电极的端部与绝缘性树脂层的表面的距离的7〜50％。