公开(公告)号：US20200075779A1

公开(公告)日：2020-03-05

申请号：US16661758

申请日：2019-10-23

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Luigi Colombo

IPC: H01L29/786 ,  H01L29/778 ,  H01L29/16 ,  H01L21/02 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49 ,  H01L29/267 ,  H01L29/20

Abstract: A microelectronic device includes a gated graphene component. The gated graphene component has a graphitic layer containing one or more layers of graphene. The graphitic layer has a channel region, a first contact region adjacent to the channel region and a second contact region adjacent to the channel region. A patterned hexagonal boron nitride (hBN) layer is disposed on the graphitic layer above the channel region. A gate is located over the patterned hBN layer above the channel region. A first connection is disposed on the graphitic layer in the first contact region, and a second connection is disposed on the graphitic layer in the second contact region. The patterned hBN layer does not extend completely under the first connection or under the second connection. A method of forming the gated graphene component in the microelectronic device is disclosed.

公开(公告)号：US20190259827A1

公开(公告)日：2019-08-22

申请号：US15902829

申请日：2018-02-22

Applicant: Texas Instruments Incorporated

Inventor： Poornika Fernandes ,  Luigi Colombo ,  Haowen Bu

IPC: H01L49/02 ,  C23C16/455 ,  H01G4/018 ,  H01L21/677

Abstract: In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

公开(公告)号：US20190259826A1

公开(公告)日：2019-08-22

申请号：US15902764

申请日：2018-02-22

Applicant: Texas Instruments Incorporated

Inventor： Poornika Fernandes ,  Luigi Colombo ,  Haowen Bu

IPC: H01L49/02 ,  H01L21/02 ,  H01L29/06 ,  H01G4/08 ,  H01L27/06

Abstract: In a described example, an integrated circuit includes a capacitor first plate; a dielectric stack over the capacitor first plate comprising silicon nitride and silicon dioxide with a capacitance quadratic voltage coefficient less than 0.5 ppm/V2; and a capacitor second plate over the dielectric stack.

公开(公告)号：US20180151470A1

公开(公告)日：2018-05-31

申请号：US15361394

申请日：2016-11-26

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Archana Venugopal ,  Luigi Colombo ,  Robert Reid Doering

IPC: H01L23/367 ,  H01L23/522 ,  H01L23/373 ,  H01L23/00 ,  H01L21/768 ,  H01L21/48

Abstract: An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region has a plurality of interconnect levels. The integrated circuit includes a thermal routing structure in the interconnect region. The thermal routing structure extends over a portion, but not all, of the integrated circuit in the interconnect region. The thermal routing structure includes a cohered nanoparticle film in which adjacent nanoparticles cohere to each other. The thermal routing structure has a thermal conductivity higher than dielectric material touching the thermal routing structure. The cohered nanoparticle film is formed by a method which includes an additive process.

公开(公告)号：US20180151467A1

公开(公告)日：2018-05-31

申请号：US15361403

申请日：2016-11-26

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Benjamin Stassen Cook ,  Luigi Colombo ,  Robert Reid Doering

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/373 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48 ,  H01L21/02

CPC classification number: H01L21/02354 ,  H01L21/02288 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/34 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/3737 ,  H01L23/4334 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/14 ,  H01L2924/15313 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/32245 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.

公开(公告)号：US09793214B1

公开(公告)日：2017-10-17

申请号：US15438174

申请日：2017-02-21

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Benjamin Stassen Cook ,  Luigi Colombo ,  Robert Reid Doering

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L23/522 ,  H01L23/66

CPC classification number: H01L23/53276 ,  H01L23/5226 ,  H01L23/53214 ,  H01L23/53271 ,  H01L23/66 ,  H01L2223/6616

Abstract: An integrated circuit includes an interconnect which includes a metal layer, a layer of graphene on at least one of the top surface of the interconnect or the bottom surface of the interconnect, and a layer of hexagonal boron nitride (hBN) on the layer of graphene, opposite from the metal layer. Dielectric material of the integrated circuit contacts the layer of hBN. The layer of graphene has one or more atomic layers of graphene. The layer of hBN is one to three atomic layers thick. The interconnect may have a lower graphene layer on the bottom surface of the metal layer with a lower hBN layer, and an upper graphene layer on the top surface of the metal layer, with an upper hBN layer.

公开(公告)号：US09496198B2

公开(公告)日：2016-11-15

申请号：US14499222

申请日：2014-09-28

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Marie Denison ,  Luigi Colombo ,  Hiep Nguyen ,  Darvin Edwards

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/498 ,  H01L23/00 ,  H01L23/367

CPC classification number: H01L23/373 ,  H01L21/4871 ,  H01L21/4889 ,  H01L23/367 ,  H01L23/3675 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L2224/03416 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05078 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05193 ,  H01L2224/05558 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/05693 ,  H01L2224/08165 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2224/45099 ,  H01L2224/03

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract translation: 微电子器件包括在半导体器件的前表面处具有部件的半导体器件和在半导体器件的背面上的背面散热器层。 背面散热器层为100纳米至3微米厚，面内热导率至少为150瓦特/米-2°K，电阻率小于100微欧姆厘米。

公开(公告)号：US20240312862A1

公开(公告)日：2024-09-19

申请号：US18674006

申请日：2024-05-24

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Archana Venugopal ,  Luigi Colombo ,  Robert Reid Doering

IPC: H01L23/367 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/74 ,  H01L21/768 ,  H01L23/373 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/02

CPC classification number: H01L23/367 ,  H01L21/32051 ,  H01L21/32055 ,  H01L21/324 ,  H01L21/76895 ,  H01L23/3735 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L27/0248 ,  H01L21/743 ,  H01L23/3677 ,  H01L2224/48463

Abstract: An integrated circuit includes a semiconductor substrate. The integrated circuit also includes a trench in the semiconductor substrate, the trench including a layer of a nanoparticle material. The integrated circuit further includes an interconnect region above the trench.

公开(公告)号：US11996343B2

公开(公告)日：2024-05-28

申请号：US17114219

申请日：2020-12-07

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Archana Venugopal ,  Luigi Colombo ,  Robert Reid Doering

IPC: H01L23/34 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/768 ,  H01L23/367 ,  H01L23/373 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/02 ,  H01L21/74

CPC classification number: H01L23/367 ,  H01L21/32051 ,  H01L21/32055 ,  H01L21/324 ,  H01L21/76895 ,  H01L23/3735 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L27/0248 ,  H01L21/743 ,  H01L23/3677 ,  H01L2224/48463

Abstract: An integrated circuit has a substrate that includes a semiconductor material, and an interconnect region disposed on the substrate. The integrated circuit includes a thermal routing trench in the substrate. The thermal routing trench includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal routing trench has a thermal conductivity higher than the semiconductor material contacting the thermal routing trench. The cohered nanoparticle film is formed by an additive process.

公开(公告)号：US20230243770A1

公开(公告)日：2023-08-03

申请号：US18180572

申请日：2023-03-08

Applicant: Texas Instruments Incorporated

Inventor： Archana VENUGOPAL ,  Benjamin Stassen Cook ,  Nazila Dadvand ,  Luigi Colombo

IPC: G01N27/12 ,  G01N33/00 ,  H01L29/06 ,  H01L29/16 ,  C23C16/04 ,  C23C18/06 ,  C23C18/16 ,  C23C16/26 ,  B33Y10/00 ,  B33Y80/00

CPC classification number: G01N27/127 ,  G01N33/0027 ,  G01N27/128 ,  H01L29/0669 ,  H01L29/1606 ,  C23C16/042 ,  C23C16/04 ,  C23C18/06 ,  C23C18/1605 ,  C23C18/1603 ,  C23C16/047 ,  C23C18/1607 ,  C23C18/1657 ,  C23C16/26 ,  C23C18/1648 ,  B33Y10/00 ,  B33Y80/00 ,  H01L21/02606

Abstract: A gas sensor has a microstructure sensing element which comprises a plurality of interconnected units wherein the units are formed of connected graphene tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing graphitic carbon on the metal microlattice, converting the graphitic carbon to graphene, and removing the metal microlattice.