Method for forming film by plasma
    30.
    发明授权
    Method for forming film by plasma 失效
    用等离子体形成薄膜的方法

    公开(公告)号:US06770332B2

    公开(公告)日:2004-08-03

    申请号:US09573412

    申请日:2000-05-18

    IPC分类号: H05H146

    摘要: In a case where a CF film is used as an interlayer dielectric file for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e g., about 400 to 450° C. At this time, F containing gases are emitted from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, it is required to enhance thermostability. A compound gas of C and F, e.g., C4F8 gas, a hydrocarbon gas, e.g., C2H4 gas, and CO gas are used as thin film deposition gases. These gases are activated to deposit a CF film on a semiconductor wafer 10 at a process temperature of 400° C. using active species thereof. Since the number of diamond-like bonds are greater than the number of graphite-like bonds by the addition of CO gas, the bonds are strengthened and difficult to be cut even at a high temperature, so that thermostability is enhanced.

    摘要翻译: 在将CF膜用作半导体器件的层间电介质文件的情况下,当形成钨的布线时,将CF膜加热至例如约400〜450℃的温度。在此 时间,从CF膜发射含F气体,由于布线的腐蚀和膜厚度的降低,存在各种缺点。 为了防止这种情况,需要提高热稳定性。使用C和F的复合气体,例如C 4 F 8气体,烃气体例如C 2 H 4气体和CO气体作为薄膜沉积气体。 这些气体被激活,以使其活性物质在400℃的处理温度下在半导体晶片10上沉积CF膜。 由于通过添加CO气体,类金刚石键的数量大于石墨状键的数量,所以即使在高温下也会使键强化,难以切断,从而提高热稳定性。