公开(公告)号：US20100270633A1

公开(公告)日：2010-10-28

申请号：US12830954

申请日：2010-07-06

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Taisuke Furukawa ,  Masakazu Taki

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Taisuke Furukawa ,  Masakazu Taki

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/132 ,  H01F10/3254 ,  H01F10/3272 ,  H01L27/228

摘要： Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.

摘要翻译： 铁磁层具有朝向彼此抵消的方向取向的磁化，使得铁磁层的净磁化基本上为零。 也就是说，铁磁层与插入其间的非磁性层交换耦合，从而形成SAF结构。 由于形成SAF结构的铁磁层的净磁化基本上为零，记录层的磁化由铁磁层的磁化决定。 因此，铁磁层由具有高的单轴磁各向异性的CoFeB合金制成，铁磁层由具有高交换耦合力的CoFe合金制成。

公开(公告)号：US20100156405A1

公开(公告)日：2010-06-24

申请号：US12601098

申请日：2008-05-27

申请人： Taisuke Furukawa ,  Takeharu Kuroiwa ,  Shingo Tomohisa ,  Takashi Takenaga ,  Masakazu Taki ,  Hiroshi Takada ,  Yuji Abe

发明人： Taisuke Furukawa ,  Takeharu Kuroiwa ,  Shingo Tomohisa ,  Takashi Takenaga ,  Masakazu Taki ,  Hiroshi Takada ,  Yuji Abe

IPC分类号： G01R33/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/072 ,  G01R33/091

摘要： A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

摘要翻译： 一种磁场检测装置，包括用于调整施加到磁阻元件的磁场的磁体（磁通量）。 平面图中的基板上磁体的形状在一端部侧呈锥形，在与一端部相反的另一端部侧呈大致漏斗状，另一端部宽度大于一端部 并且在输出侧端部的前方配置有磁阻元件。 在基板上的磁性体中，锥形部分的轮廓不像漏斗那样呈直线状，而是具有弯曲形状，其中第一弯曲部分以柔和曲率向外突出，第二弯曲部分向内突出，曲率类似于 第一弯曲部分的连续形成。

公开(公告)号：US20090250776A1

公开(公告)日：2009-10-08

申请号：US12399760

申请日：2009-03-06

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

摘要翻译： 提供了一种写入特性稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

公开(公告)号：US20080168649A1

公开(公告)日：2008-07-17

申请号：US12076151

申请日：2008-03-14

申请人： Shinroku Maejima ,  Shuichi Ueno ,  Takashi Takenaga ,  Takeharu Kuroiwa

发明人： Shinroku Maejima ,  Shuichi Ueno ,  Takashi Takenaga ,  Takeharu Kuroiwa

IPC分类号： G11B5/127

CPC分类号： H01L43/12 ,  G11C11/16 ,  H01L27/228 ,  Y10T29/49041 ,  Y10T29/49048

摘要： A photolithographic process using an X-direction delimiting mask (S11) for aligning respective side faces of a TMR element (1) and a strap (5) situated in a negative X side is performed, to shape the TMR element (1) and the strap (5) into desired configurations. The X-direction delimiting mask (S11) includes a straight edge and is disposed such that the straight edge is parallel to a Y direction and crosses both the TMR element (1) and the strap (5) in plan view. In use of the X-direction delimiting mask (S11), respective portions of the TMR element (1) and the strap (5) situated in a positive X side relative to the straight edge in plan view are covered with the X-direction delimiting mask (S11).

摘要翻译： 执行使用用于对准位于负X侧的TMR元件（1）和带（5）的各个侧面的X方向限制掩模（S11）的光刻工艺，以使TMR元件（1）和 带（5）成为所需的配置。 X方向限制掩模（S11）包括直边并且被设置为使得直边平行于Y方向，并且在平面图中与TMR元件（1）和带（5）交叉。 在使用X方向限制掩模（S11）时，在平面图中相对于直边缘位于正X侧的TMR元件（1）和带子（5）的各个部分被X方向 限定掩模（S11）。

公开(公告)号：US09553063B2

公开(公告)日：2017-01-24

申请号：US13885841

申请日：2011-04-18

申请人： Yoshiji Ohtsu ,  Taku Kusunoki ,  Akira Yamada ,  Takeharu Kuroiwa ,  Masayoshi Tarutani

发明人： Kenji Ohtsu ,  Taku Kusunoki ,  Akira Yamada ,  Takeharu Kuroiwa ,  Masayoshi Tarutani

IPC分类号： H01L23/488 ,  H01L23/00 ,  H01L29/45 ,  H01L23/482 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L24/13 ,  H01L21/0485 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/83 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/452 ,  H01L2224/04026 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/05678 ,  H01L2224/29006 ,  H01L2224/2908 ,  H01L2224/29339 ,  H01L2224/32013 ,  H01L2224/32245 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/00

摘要： The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part; and a surface metal layer outwardly formed on a side of the Ni-barrier metal layer opposite to the side toward the semiconductor-element constituting part, to be connected to the metal nanoparticles sintered layer; wherein the Ni-barrier metal layer contains a metal for suppressing diffusion of nickel toward the surface metal layer.

摘要翻译： 所述半导体元件具有包括：形成在所述半导体元件构成部件的至少一个面的一侧的含有镍的Ni-夹杂金属层的电极， 在与所述半导体元件构成部分的一侧相反的所述Ni-夹杂物层的一侧向外形成的Ni阻挡金属层; 和与金属纳米粒子烧结层连接的与Ni半导体元件构成部分相反一侧的Ni阻挡金属层一侧向外形成的表面金属层; 其中所述Ni阻挡金属层含有用于抑制镍向所述表面金属层扩散的金属。

公开(公告)号：US08791692B2

公开(公告)日：2014-07-29

申请号：US13519927

申请日：2010-12-14

申请人： Taisuke Furukawa ,  Koichi Akiyama ,  Takeharu Kuroiwa ,  Yuji Kawano ,  Hiroshi Kobayashi

发明人： Taisuke Furukawa ,  Koichi Akiyama ,  Takeharu Kuroiwa ,  Yuji Kawano ,  Hiroshi Kobayashi

IPC分类号： G01B7/14 ,  G01B7/30 ,  G01R33/06 ,  G01D5/14 ,  G01D5/244 ,  G01R33/09 ,  G01R33/00 ,  G01R29/12

CPC分类号： G01D5/147 ,  G01D5/145 ,  G01D5/24438 ,  G01R29/12 ,  G01R33/09

摘要： A magnetic position detecting device includes a magnet; first to fourth magnetoelectric conversion elements formed on a virtual plane; and a flux guide made of a magnetic material. The flux guide includes first and second protrusions provided at a distance from each other in a direction parallel to the virtual plane. A specific portion recessed in a concave shape is provided in the flux guide in a mid-portion between the first and second protrusions. The first and fourth magnetoelectric conversion elements are provided approximately in the mid-portion between the first and second protrusions. The second magnetoelectric conversion element is provided between the first protrusion and the mid-portion.

摘要翻译： 磁性位置检测装置包括磁体; 形成在虚拟平面上的第一至第四磁电转换元件; 以及由磁性材料制成的磁通引导件。 磁通引导件包括在平行于虚拟平面的方向上彼此间隔一定距离处设置的第一和第二突起。 在第一突起和第二突起之间的中间部分中的磁通引导件中设置凹陷凹陷形状的特定部分。 第一和第四磁电转换元件大致设置在第一和第二突起之间的中间部分。 第二磁电转换元件设置在第一突起和中间部分之间。

公开(公告)号：US08679952B2

公开(公告)日：2014-03-25

申请号：US13696943

申请日：2011-03-18

申请人： Nobuyuki Tomita ,  Kenichi Hamano ,  Masayoshi Tarutani ,  Yoichiro Mitani ,  Takeharu Kuroiwa ,  Masayuki Imaizumi ,  Hiroaki Sumitani ,  Kenichi Ohtsuka ,  Tomoaki Furusho ,  Takao Sawada ,  Yuji Abe

发明人： Nobuyuki Tomita ,  Kenichi Hamano ,  Masayoshi Tarutani ,  Yoichiro Mitani ,  Takeharu Kuroiwa ,  Masayuki Imaizumi ,  Hiroaki Sumitani ,  Kenichi Ohtsuka ,  Tomoaki Furusho ,  Takao Sawada ,  Yuji Abe

IPC分类号： H01L21/20

CPC分类号： H01L21/02529 ,  C30B25/02 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/6719 ,  H01L21/68771 ,  H01L29/1608

摘要： A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.

摘要翻译： 提供了一种方法来制造其表面平坦度非常好并且具有非常低的胡萝卜缺陷密度和外延生长后产生的三角形缺陷的碳化硅外延晶片。 碳化硅外延晶片是通过第一步骤，在还原气体气氛中，在第一温度T1处理处理时间t，退火碳化硅本体衬底，其从<0001>面倾斜小于5度;第二步骤 在第一步骤中，在低于退火温度T1的第二温度T2下进行外延生长的第三步骤，同时至少提供包含硅原子的气体和包括碳的气体 原子

公开(公告)号：US08492881B2

公开(公告)日：2013-07-23

申请号：US12728885

申请日：2010-03-22

申请人： Takeharu Kuroiwa ,  Masayoshi Tarutani ,  Takashi Takenaga ,  Hiroshi Takada

发明人： Takeharu Kuroiwa ,  Masayoshi Tarutani ,  Takashi Takenaga ,  Hiroshi Takada

IPC分类号： H01L23/552 ,  H01L29/82 ,  G11C11/00 ,  G11C11/14

CPC分类号： H01L27/228 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L23/3107 ,  H01L23/49579 ,  H01L27/105 ,  H01L43/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A magnetic storage device which enables stable operation at the time of recording information into MRAM and the stable retention of recorded information. The die of the magnetic storage device has a substrate, first and second wirings, a magnetic storage element and a first magnetic shielding structure. The first magnetic shielding structure is formed to cover the magnetic storage element in a plan view. Second and third magnetic shielding structures sandwich the die in a thickness direction. A lead frame member has the die mounted thereon and contains a ferromagnetic material. The lead frame member overlaps with only part of the die in a plan view.

摘要翻译： 一种磁存储装置，其在将信息记录到MRAM中时能够稳定地操作并且稳定地保留所记录的信息。 磁存储装置的管芯具有基板，第一和第二布线，磁存储元件和第一磁屏蔽结构。 第一磁屏蔽结构形成为在俯视图中覆盖磁存储元件。 第二和第三磁屏蔽结构将模具沿厚度方向夹着。 引线框架构件具有安装在其上的模具并且包含铁磁材料。 在平面图中，引线框架部件仅与模具的一部分重叠。

公开(公告)号：US20120301975A1

公开(公告)日：2012-11-29

申请号：US13566739

申请日：2012-08-03

申请人： Ryoji Matsuda ,  Shuichi Ueno ,  Haruo Furuta ,  Takashi Takenaga ,  Takeharu Kuroiwa

发明人： Ryoji Matsuda ,  Shuichi Ueno ,  Haruo Furuta ,  Takashi Takenaga ,  Takeharu Kuroiwa

IPC分类号： H01L21/02

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/12

摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.

摘要翻译： 提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。 下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。 隧道绝缘膜包含氧化铝（AlOx）作为构成材料。 在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。 硬掩模的膜厚大于CAP层的膜厚。

公开(公告)号：US20100151276A1

公开(公告)日：2010-06-17

申请号：US12617469

申请日：2009-11-12

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Ryoji Matsuda ,  Yosuke Takeuchi

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Ryoji Matsuda ,  Yosuke Takeuchi

IPC分类号： G11B5/706

CPC分类号： G11B5/66 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  Y10T428/1143

摘要： A magnetic storage device stable in write characteristic is provided. A first nonmagnetic film is provided over a recording layer. A first ferromagnetic film is provided over the first nonmagnetic film and has a first magnetization and a first film thickness. A second nonmagnetic film is provided over the first ferromagnetic film. A second ferromagnetic film is provided over the second nonmagnetic film, is coupled in antiparallel with the first ferromagnetic film, and has a second magnetization and a second film thickness. An antiferromagnetic film is provided over the second ferromagnetic film. The sum of the product of the first magnetization and the first film thickness and the product of the second magnetization and the second film thickness is smaller than the product of the magnetization of the recording layer and the film thickness of the recording layer.

摘要翻译： 提供了一种写入特性稳定的磁存储装置。 在记录层上提供第一非磁性膜。 第一铁磁膜设置在第一非磁性膜上并具有第一磁化强度和第一膜厚度。 在第一铁磁膜上设置第二非磁性膜。 第二铁磁膜设置在第二非磁性膜上方，与第一铁磁膜反向并联，并具有第二磁化强度和第二膜厚度。 在第二铁磁膜上设置反铁磁性膜。 第一磁化强度与第一膜厚度的乘积和第二磁化强度与第二膜厚度的乘积的和小于记录层的磁化强度与记录层的膜厚度的乘积。