公开(公告)号：US5595943A

公开(公告)日：1997-01-21

申请号：US495021

申请日：1995-06-27

申请人： Takeyuki Itabashi ,  Haruo Akahoshi ,  Akio Takahashi

发明人： Takeyuki Itabashi ,  Haruo Akahoshi ,  Akio Takahashi

IPC分类号： C23C18/36 ,  C23C18/40 ,  H01L21/288 ,  H01L21/768 ,  H05K3/18 ,  H01L21/28

CPC分类号： C23C18/36 ,  C23C18/405 ,  H01L21/288 ,  H01L21/76877 ,  H05K3/184

摘要： A method for forming a conductor circuit is provided which comprises depositing and filling a conductor metal in recessions of insulator in the form of grooves or holes using an electroless plating solution, the conductor metal being deposited and filled in the recession to the same level as the surface of the insulator, wherein said electroless plating solution contains an inhibitor which inhibits the cathodic partial reaction which is a metal deposition reaction and the electroless plating is carried out with stirring the plating solution. Since the plating reaction automatically stops when the metal conductor 1 is formed up to the level of the surface of the insulator 2, a conductor circuit in which the surface of the metal conductor 1 and that of the insulator 2 are even and at the same level can be easily obtained. Furthermore, since the conductor circuits differing in thickness can be simultaneously formed on one substrate, the number of lamination in making multilayer circuit can be reduced and a multilayer circuit board of low electric resistance can be obtained.

摘要翻译： 提供一种用于形成导体电路的方法，其包括使用化学镀溶液沉积并填充凹槽或孔形式的绝缘体凹陷中的导体金属，将导体金属沉积并填充在与经济衰退相同的水平上 表面，其中所述化学镀溶液含有抑制作为金属沉积反应的阴极部分反应的抑制剂，并且通过搅拌电镀液进行化学镀。 由于当金属导体1形成到绝缘体2的表面的高度时，电镀反应自动停止，其中金属导体1的表面和绝缘体2的表面均匀并处于相同水平的导体电路 可以很容易地获得。 此外，由于可以在一个基板上同时形成厚度不同的导体电路，因此可以减少制造多层电路中的层压次数，并且可以获得低电阻的多层电路板。

公开(公告)号：US07579275B2

公开(公告)日：2009-08-25

申请号：US10253480

申请日：2002-09-25

申请人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

发明人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

IPC分类号： H01L21/44 ,  B01J19/12 ,  G01N27/26 ,  B05C3/00

CPC分类号： H01L21/76877 ,  C25D7/12 ,  C25D17/001 ,  H01L21/2885

摘要： In electric plating of supplying a current between an anode electrode and a cathode electrode as a plated body immersed in a plating solution thereby forming a plated film comprising a conductor on a surface of the cathode electrode, a preliminary electrolytic electrode that comes in contact with the plating solution before the cathode electrode comes in contact with the plating solution is disposed, and the cathode electrode is brought into contact with the plating solution while supplying a preliminary electrolytic current between the preliminary electrolytic electrode and the anode electrode, whereby a uniform plated film with no voids can be formed while suppressing dissolution of the underlying conductive film in the electric plating treatment.

摘要翻译： 在将阳极电极和阴极电极之间的电流供给到浸渍在电镀液中的电镀体的电镀中，由此在阴极电极的表面形成包含导体的电镀膜，与该电解液接触的预备电解电极 配置阴极与镀液接触之前的镀液，并且在预备电解电极和阳极电极之间提供预备的电解电流的同时使阴极与镀液接触，由此形成均匀的镀膜 在电镀处理中，在抑制下面的导电膜的溶解的同时，不会形成空隙。

公开(公告)号：US20060102485A1

公开(公告)日：2006-05-18

申请号：US11329093

申请日：2006-01-11

申请人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

发明人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

IPC分类号： C25D5/00

CPC分类号： C23C18/1619 ,  C23C18/1682 ,  C23C18/1683 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76874 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention is purposed to reduce the amount of the electroless plating solution used for plating, to facilitate compositional control of the plating solution, and to prevent degradation of quality of the plating film (deposit) by oxygen dissolved in the plating solution. An electroless plating method in which a previously prepared electroless plating solution is exposed to a depressurized atmosphere to decrease the gas components existing in the solution, and while maintaining the plating solution in the form of a continuous thin layer, the surface to be plated of the substrate on which to form an electroless plating film is brought into contact with said layer of the plating solution and maintained in this state for a required period of time to perform electroless plating. An electroless plating device, and a production method and a production device of semiconductor devices are also disclosed.

摘要翻译： 本发明旨在减少用于电镀的化学镀溶液的量，以便于电镀溶液的组成控制，并且防止溶解在电镀溶液中的氧的电镀膜（沉积物）的质量降低。 一种化学镀方法，其中预先制备的化学镀溶液暴露于减压气氛中以减少溶液中存在的气体组分，并且在将镀液保持为连续薄层形式的同时，镀覆表面 使形成无电解镀膜的基板与所述电镀液层接触，并在该状态下保持需要的时间以进行无电镀。 还公开了一种化学镀装置，以及半导体装置的制造方法和制造装置。

公开(公告)号：US20050087447A1

公开(公告)日：2005-04-28

申请号：US10996382

申请日：2004-11-26

申请人： Toshio Haba ,  Takeyuki Itabashi ,  Haruo Akahoshi ,  Shinichi Fukada

发明人： Toshio Haba ,  Takeyuki Itabashi ,  Haruo Akahoshi ,  Shinichi Fukada

IPC分类号： C25D3/38 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  H01L23/522 ,  H05K3/42

CPC分类号： C25D7/123 ,  C25D3/38 ,  H05K3/423

摘要： An object of the present invention is to improve the reliability and the yield of production of semiconductor integrated circuit devices by filling copper in the inside of features having a high aspect ratio for forming multi-layer interconnections composed of a plurality of interconnection layers which are connected to one another and to a copper electroplating bath suitable therefor. In the present invention, when the features are filled with copper, the use of a copper electroplating bath with an addition of cyanine dyes, for example, indolium compounds allows the copper plating to proceed preferentially from the bottoms of the features.

摘要翻译： 本发明的目的是通过在具有高纵横比的特征内部填充铜来提高半导体集成电路器件的可靠性和生产成本，以形成由连接的多个互连层组成的多层互连 彼此之间和适合于此的铜电镀浴。 在本发明中，当特征填充有铜时，使用带有花青染料的铜电镀浴，例如，吲哚鎓化合物，可使铜镀层优先从特征的底部进行。

公开(公告)号：US20050022745A1

公开(公告)日：2005-02-03

申请号：US10898201

申请日：2004-07-26

申请人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

发明人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

IPC分类号： C23C18/16 ,  B05D1/18 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC分类号： C23C18/1619 ,  C23C18/1682 ,  C23C18/1683 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76874 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention is purposed to reduce the amount of the electroless plating solution used for plating, to facilitate compositional control of the plating solution, and to prevent degradation of quality of the plating film (deposit) by oxygen dissolved in the plating solution. An electroless plating method in which a previously prepared electroless plating solution is exposed to a depressurized atmosphere to decrease the gas components existing in the solution, and while maintaining the plating solution in the form of a continuous thin layer, the surface to be plated of the substrate on which to form an electroless plating film is brought into contact with said layer of the plating solution and maintained in this state for a required period of time to perform electroless plating. An electroless plating device, and a production method and a production device of semiconductor devices are also disclosed.

摘要翻译： 本发明旨在减少用于电镀的化学镀溶液的量，以便于电镀溶液的组成控制，并且防止溶解在电镀溶液中的氧的电镀膜（沉积物）的质量降低。 一种化学镀方法，其中预先制备的化学镀溶液暴露于减压气氛中以减少溶液中存在的气体组分，并且在将镀液保持为连续薄层形式的同时，镀覆表面 使形成无电解镀膜的基板与所述电镀液层接触，并在该状态下保持需要的时间以进行无电镀。 还公开了一种化学镀装置，以及半导体装置的制造方法和制造装置。

公开(公告)号：US06511588B1

公开(公告)日：2003-01-28

申请号：US09545093

申请日：2000-04-07

申请人： Kinya Kobayashi ,  Akihiro Sano ,  Takeyuki Itabashi ,  Toshio Haba ,  Haruo Akahoshi ,  Shinichi Fukada

发明人： Kinya Kobayashi ,  Akihiro Sano ,  Takeyuki Itabashi ,  Toshio Haba ,  Haruo Akahoshi ,  Shinichi Fukada

IPC分类号： C25D302

CPC分类号： H01L21/2885 ,  C25D3/38 ,  C25D7/123 ,  H01L21/76877

摘要： A plating method comprising using a plating solution containing an additive satisfying the following conditions: 0.005×h2/w

摘要翻译： 一种电镀方法，其特征在于，使用含有满足以下条件的添加剂的镀液：D为添加剂的扩散系数; kappa是添加剂的吸附或消耗的表面反应速率; h是沟槽或洞的高度; w是沟槽的宽度或孔的半径; 和THETA是（存在添加剂时的镀膜生长速度）/（不存在添加剂时的镀膜生长速度）的比例，适合于在宽度为1μm以下的沟槽或孔中形成电镀金属 （沟槽）或半径小于1μm的孔（孔）而不产生空隙，并且特别适合于制造半导体器件，其可以通过使用电镀条件具有形成在半导体衬底上的铜布线层的多层结构，其中至少 在与铜布线层的其余部分不同的条件下对一层铜布线层进行电镀。

公开(公告)号：US5788821A

公开(公告)日：1998-08-04

申请号：US815068

申请日：1997-03-11

申请人： Takeyuki Itabashi ,  Fujiko Kinosaki ,  Akio Takahashi ,  Haruo Akahoshi

发明人： Takeyuki Itabashi ,  Fujiko Kinosaki ,  Akio Takahashi ,  Haruo Akahoshi

IPC分类号： B01J23/74 ,  B01J37/02 ,  C02F1/461 ,  C02F1/467 ,  C23C18/28 ,  C23C18/40 ,  C25B3/02 ,  H01M4/90

CPC分类号： B01J23/74 ,  B01J37/0221 ,  B01J37/0225 ,  H01M4/90 ,  C02F1/46109 ,  C02F1/4672 ,  Y02W10/37

摘要： A copper-based oxidation catalyst comprising a substrate of copper or copper alloy and regions of a metal composed mainly of a group VIII element in close contact with the substrate, the surface of the substrate being partly exposed to the outside, has a high catalytic activity on the carbonyl oxidation reaction and is effective as a catalyst for electroless plating, a fuel cell electrode material, a catalyst for treating waste water or waste liquor or an oxidation reaction catalyst.

摘要翻译： 一种铜基氧化催化剂，其包含铜或铜合金的基体以及主要由与基板紧密接触的VIII族元素的金属区域，基板的表面部分地暴露于外部，具有高的催化活性 在羰基氧化反应中，作为无电镀的催化剂，燃料电池电极材料，废水或废液的处理催化剂或氧化反应催化剂是有效的。

公开(公告)号：US08368195B2

公开(公告)日：2013-02-05

申请号：US12652245

申请日：2010-01-05

申请人： Hisashi Tanie ,  Takeyuki Itabashi ,  Nobuhiko Chiwata ,  Motoki Wakano

发明人： Hisashi Tanie ,  Takeyuki Itabashi ,  Nobuhiko Chiwata ,  Motoki Wakano

IPC分类号： H01L23/02

CPC分类号： H01L25/50 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/742 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/0603 ,  H01L2224/11334 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/136 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/81194 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/05552

摘要： A semiconductor device having stacked semiconductor chips is provided wherein alignment of even thin semiconductor chips of a large warpage is easy and thus high assembling accuracy and high reliability are ensured. Semiconductor chips having hollow through-silicon via electrodes each formed with a tapered portion are melt-joined using solder balls each having a core of a material higher in melting point than solder. When melt-joining the semiconductor chips, the temperature is raised while imparting an urging load to stacked semiconductor chips, thereby correcting warpage of the semiconductor chips. In each chip-to-chip connection thus formed, if the connection is to prevent the occurrence of stress around the electrode due to the urging load, a solder ball having a core of a smaller diameter than in the other connections is used in the connection.

摘要翻译： 提供了具有堆叠半导体芯片的半导体器件，其中易弯曲的大的翘曲的均匀的薄的半导体芯片的对准，从而确保了高的组装精度和高的可靠性。 具有各自形成有锥形部分的中空的硅通孔电极的半导体芯片使用具有比焊料熔点高的材料的芯的焊球进行熔融接合。 当熔融接合半导体芯片时，温度升高同时对层叠的半导体芯片施加施力载荷，从而校正半导体芯片的翘曲。 在如此形成的每个芯片到芯片连接中，如果连接是为了防止由于施加载荷而在电极周围产生应力，则在连接中使用具有直径小于其它连接的芯的焊球 。

公开(公告)号：US08197752B2

公开(公告)日：2012-06-12

申请号：US11493800

申请日：2006-07-27

申请人： Masafumi Nojima ,  Takeyuki Itabashi ,  Takao Ishikawa ,  Hiroshi Kanemoto

发明人： Masafumi Nojima ,  Takeyuki Itabashi ,  Takao Ishikawa ,  Hiroshi Kanemoto

IPC分类号： G01N21/00 ,  G01N31/00 ,  G01N33/00 ,  G01F1/12 ,  G01F1/50 ,  G01F25/00 ,  G01L27/00 ,  G01R11/56 ,  G01R21/133 ,  G06F17/00

CPC分类号： G06Q50/06 ,  Y02P90/84

摘要： Managing system for emissions environmental pollutants comprising: a measuring device for measuring a flow rate of a fuel supplied to a customer; an unit emission quantity storage device of environmentally influential substance for storing a unit emission quantity of an environmentally influential substance emitted when an unit flow rate of fuel is manufactured or processed; and an emission quantity computing device of environmentally influential substance for calculating, based on the fuel flow rate measured by the measuring device, and the unit emission quantity of the environmentally influential substance stored by the unit emission quantity storage device, an environmental emission quantity of the environmentally influential substance emitted when the fuel supplied to the customer is manufactured or processed.

摘要翻译： 排放环境污染物管理系统，包括：测量供应给顾客的燃料的流量的测量装置; 用于存储当制造或处理燃料的单位流量时发射的对环境有影响的物质的单位排放量的环境影响物质的单元排放量存储装置; 以及环境影响物质的排放量计算装置，用于基于由所述测量装置测量的燃料流量和由所述单元排放量存储装置存储的对环境有影响的物质的单位排放量来计算所述环境排放量， 当制造或加工供应给客户的燃料时排放的对环境有影响的物质。

公开(公告)号：US20100266929A1

公开(公告)日：2010-10-21

申请号：US12159220

申请日：2006-12-20

申请人： Hiroshi Kanemoto ,  Takao Ishikawa ,  Masafumi Noujima ,  Takeyuki Itabashi

发明人： Hiroshi Kanemoto ,  Takao Ishikawa ,  Masafumi Noujima ,  Takeyuki Itabashi

IPC分类号： H01M8/10 ,  B01J35/04 ,  B65B3/00

CPC分类号： B01J35/065 ,  B01J23/42 ,  B01J23/6486 ,  B01J23/8474 ,  C01B3/001 ,  C01B3/0015 ,  C01B3/02 ,  C01B3/26 ,  C01B3/501 ,  C01B2203/0277 ,  C01B2203/0405 ,  C01B2203/041 ,  C01B2203/048 ,  C01B2203/066 ,  C01B2203/84 ,  H01M4/90 ,  H01M4/9016 ,  H01M4/94 ,  H01M8/04208 ,  H01M8/04216 ,  H01M8/0631 ,  H01M8/065 ,  Y02E60/327 ,  Y02E60/328 ,  Y02E60/36

摘要： An object of the invention is to provide a catalyst of high activity having a dehydrogenation function or hydrogenation function, to provide a fuel cell with a high output density, and further to provide a hydrogen storage/supply device, with which hydrogen is stored or supplied in a high efficient manner.In order to achieve the above object, a porous oxide film of a metal oxide is formed on a hydrogen separation membrane surface of a catalyst having a dehydrogenation function or hydrogenation function and the hydrogen separation membrane is arranged so as to be partially exposed to at the interface with the porous oxide film. In doing so, hydrogen generated on the catalyst can quickly diffuse into the hydrogen separation membrane thereby efficiently releasing the hydrogen to outside of the reaction system. Eventually, the reaction efficiency can be improved. As to the fuel cell of the invention, the catalyst having the dehydrogenation function or hydrogenation function is used in a fuel cell and further in a hydrogen storage/supply device.

摘要翻译： 本发明的目的是提供具有脱氢功能或氢化功能的具有高活性的催化剂，以提供具有高输出密度的燃料电池，并且还提供氢储存/供应装置，氢被储存或供应 以高效率的方式。 为了实现上述目的，在具有脱氢功能或氢化功能的催化剂的氢分离膜表面上形成金属氧化物的多孔氧化物膜，并且氢分离膜被布置成部分地暴露于 与多孔氧化膜接触。 在这样做时，在催化剂上产生的氢可以快速扩散到氢分离膜中，从而有效地将氢释放到反应体系的外部。 最终可以提高反应效率。 对于本发明的燃料电池，具有脱氢功能或氢化功能的催化剂用于燃料电池中，并且还用于氢存储/供给装置。