公开(公告)号：US09412611B2

公开(公告)日：2016-08-09

申请号：US14518548

申请日：2014-10-20

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Benjamen M. Rathsack

IPC: H01L21/302 ,  H01L21/308 ,  G03F7/42 ,  H01L21/027 ,  G03F7/00 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3213

CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

Abstract: A method for forming a patterned topography on a substrate is provided. The substrate is initially provided with an exposed plurality of lines formed atop. An embodiment of the method includes aligning and preparing a first directed self-assembly pattern (DSA) pattern immediately overlying the plurality of lines, and transferring the first DSA pattern to form a first set of cuts in the plurality of lines. The embodiment further includes aligning and preparing a second DSA pattern immediately overlying the plurality of lines having the first set of cuts formed therein, and transferring the second DSA pattern to form a second set of cuts in the plurality of lines. The first and second DSA patterns each comprise a block copolymer having a hexagonal close-packed (HCP) morphology and a characteristic dimension Lo that is between 0.9 and 1.1 times the spacing between individual lines of the plurality of lines.

Abstract translation: 提供了一种在衬底上形成图案形貌的方法。 基板最初设置有形成在顶部的暴露的多条线。 该方法的一个实施例包括对准和准备立即覆盖多个线的第一定向自组装图案（DSA）图案，以及传送第一DSA图案以形成多条线中的第一组切口。 该实施例还包括对准和准备立即覆盖其中形成有第一组切口的多条线的第二DSA图案，以及传送第二DSA图案以形成多条线中的第二组切口。 第一和第二DSA图案各自包含具有六方密堆积（HCP）形态和特征尺寸Lo的多嵌段共聚物，其特征尺寸Lo在多条线之间的各条线之间的间距的0.9至1.1倍之间。

公开(公告)号：US20160141169A1

公开(公告)日：2016-05-19

申请号：US15006965

申请日：2016-01-26

Applicant: Tokyo Electron Limited

Inventor： Carlos A. Fonseca ,  Benjamen M. Rathsack ,  Jeffrey Smith ,  Anton J. deVilliers ,  Lior Huli

IPC: H01L21/02 ,  H01L21/66 ,  H01L21/687

CPC classification number: H01L21/02016 ,  G03F7/70783 ,  H01L21/30625 ,  H01L21/687 ,  H01L22/12 ,  H01L22/20

Abstract: Embodiments described relate to a method and apparatus for reducing lithographic distortion. A backside of a semiconductor substrate may be texturized. Then a lithographic process may be performed on the semiconductor substrate having the texturized backside.

公开(公告)号：US20150111386A1

公开(公告)日：2015-04-23

申请号：US14517270

申请日：2014-10-17

Applicant: Tokyo Electron Limited

Inventor： Benjamen M. Rathsack ,  Mark H. Somervell

IPC: H01L21/308

CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) surrounds the exposed topography. Further to the method, the template is filled with a block copolymer (BCP) to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

Abstract translation: 提供了一种在衬底上形成图案形貌的方法。 衬底具有形成在顶部的构成现有形貌的特征，以及用于定向自组装（DSA）的模板围绕暴露的形貌。 除了该方法之外，模板用嵌段共聚物（BCP）填充以覆盖暴露的形貌，然后在模板内对BCP进行退火以驱动与地形对准的自组装。 开发退火的BCP暴露了立即覆盖地形的DSA模式。

公开(公告)号：US20140144463A1

公开(公告)日：2014-05-29

申请号：US14091923

申请日：2013-11-27

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown ,  Wallace P. Printz ,  Benjamen M. Rathsack

IPC: H01L21/02

CPC classification number: H01L21/31138 ,  G03F7/42 ,  G03F7/423 ,  G03F7/425 ,  H01L21/67051 ,  H01L21/67115

Abstract: Provided is a method for cleaning an on implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal are optimized to achieve the two or more cleaning objectives,

Abstract translation: 提供了一种在灰化处理之后对植入的抗蚀剂层或基板进行清洁的方法。 产生使用两个或更多个喷嘴打开和关闭处理液的流动的占空比。 将基材暴露于包含第一处理化学品的处理液体，第一处理化学品具有第一膜厚度，温度，总流速和第一组成。 基板的一部分表面同时用紫外线照射，同时控制所选择的多个清洁操作变量，以实现两个或更多个清洁目标。 清洁操作变量包括第一温度，第一组成，第一膜厚度，UV波长，UV功率，第一处理时间，第一转速，占空比和残渣去除百分比中的两个或更多个，以实现两个或更多个 清洁目标，

公开(公告)号：US10429745B2

公开(公告)日：2019-10-01

申请号：US15048584

申请日：2016-02-19

Applicant: Tokyo Electron Limited ,  Osaka University

Inventor： Michael Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell ,  Wallace P. Printz ,  Seiji Nagahara ,  Seiichi Tagawa

IPC: G03F7/20 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/095

Abstract: Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.

公开(公告)号：US10020195B2

公开(公告)日：2018-07-10

申请号：US14629968

申请日：2015-02-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Steven Scheer ,  Michael A. Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell ,  Joshua S. Hooge

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/20 ,  H01L21/027

CPC classification number: H01L21/0276 ,  G03F7/091 ,  G03F7/11 ,  G03F7/203 ,  H01L21/0271

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films (e.g., photoresist on anti-reflective coatings) on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV or UV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located in the film stack. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

公开(公告)号：US20170242342A1

公开(公告)日：2017-08-24

申请号：US15048584

申请日：2016-02-19

Applicant: Tokyo Electron Limited ,  Osaka University

Inventor： Michael Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell ,  Wallace P. Printz ,  Seiji Nagahara ,  Seiichi Tagawa

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/095 ,  G03F7/2022

Abstract: Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.

公开(公告)号：US09715172B2

公开(公告)日：2017-07-25

申请号：US15161762

申请日：2016-05-23

Applicant: Tokyo Electron Limited

Inventor： Benjamen M. Rathsack ,  Mark H. Somervell

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/42 ,  H01L21/311 ,  G03F7/16 ,  G03F7/40 ,  H01L21/308 ,  H01L21/027 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3213

CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) surrounds the exposed topography. Further to the method, the template is filled with a block copolymer (BCP) to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

公开(公告)号：US09618848B2

公开(公告)日：2017-04-11

申请号：US14629843

申请日：2015-02-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michael A. Carcasi ,  Joshua S. Hooge ,  Benjamen M. Rathsack ,  Seiji Nagahara

IPC: G03F7/20 ,  G03F7/09 ,  G03F7/30 ,  H01L21/027 ,  G03F7/004

CPC classification number: G03F7/2022 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/2024 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0276

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located on the substrate. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

公开(公告)号：US09613801B2

公开(公告)日：2017-04-04

申请号：US14858568

申请日：2015-09-18

Applicant: Tokyo Electron Limited

Inventor： Michael A. Carcasi ,  Mark H. Somervell ,  Benjamen M. Rathsack

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  B81C1/00 ,  G03F7/00 ,  H01L21/268 ,  H01L21/28 ,  H01L21/66

CPC classification number: H01L21/02345 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/268 ,  H01L21/28123 ,  H01L22/12 ,  H01L22/20

Abstract: A method of patterning a layered substrate is provided that includes forming a layer of a block copolymer on a substrate, annealing the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed, and annealing the layer of the block copolymer a second time to refine or modify the microphase segregation, where one of the annealing steps uses an absorption based heating method.