摘要:
A microelectronic device package interconnect for electrically connecting a plurality of substrates is provided. The microelectronic device package interconnect comprises an insulative layer positioned on a substrate, wherein the insulative layer has an opening extending through the insulative layer to the substrate. The microelectronic device package interconnect further comprises solder positioned in the opening.
摘要:
A tape for use as a carrier in semiconductor assembly, which has one or more base sheets 101 of polymeric, preferably thermoplastic, material having first (101a) and second (101b) surfaces. A polymeric adhesive film (102, 104) and a foil (103, 105) of different, preferably inert, material are attached to the base sheet on both the first and second surface sides; they thus provide a thickness (120) to the tape. A plurality of holes is formed through the thickness of the tape; the holes are preferably tapered with an angle between about 70° and 80° with the second tape surface. A reflow metal element (301), with a preferred diameter (302) about equal to the tape thickness, is held in each of the holes.
摘要:
A semiconductor device (1700), which comprises a workpiece (1201) with an outline (1711) and a plurality of contact pads (1205) and further an external part (1701) with a plurality of terminal pads (1702). This part is spaced from the workpiece, and the terminal pads are aligned with the workpiece contact pads, respectively. A reflow element (1203) interconnects each of the contact pads with its respective terminal pad. Thermoplastic material (1204) fills the space between the workpiece and the part; this material adheres to the workpiece, the part and the reflow elements. Further, the material has an outline (1711) substantially in line with the outline of the workpiece, and fills the space (1707) substantially without voids. Due to the thermoplastic character of the filling material, the finished device can be reworked, when the temperature range for reflowing the reflow elements is reached.
摘要:
A semiconductor device comprising a semiconductor chip having an active and a passive surface, the passive surface adhesively attached to a substrate film by means of a multilayer composite; this composite comprising a metal foil having first and second surfaces and an adhesive layer attached on each of these surfaces. The multilayer composite has an average modulus larger than the modulus of the encapsulating molding compound used in the semiconductor device. By applying the composite to assembling face-up chip-scale devices, stress in solder joints is reduced and solder fatigue life enhanced.
摘要:
Disclosed is a process for preparing a semiconductor device comprising the steps of adhering a back surface of a wafer, a front surface of which has been formed a circuit, onto the radiation curable adhesive layer, dicing the wafer into chips, rinsing, drying, irradiating the adhesive layer with radiation to cure said adhesive layer, expanding the adhesive sheet if necessary to make the chips apart from each other, then picking up the chips, mounting the picked chips on a lead frame, bonding, and molding to give such a structure that the back surfaces of the chips are partially or wholly in contact with a package molding resin, wherein the radiation curable adhesive layer comprises 100 parts by weight of an acrylic adhesive composed of a copolymer of an acrylic ester and an OH group-containing polymerizable monomer and 50-200 parts by weight of a radiation polymerizable compound having two or more unsaturated bonds, and the radiation curable adhesive layer has an elastic modulus of not less than 1×109 dyn/cm2 after curing by irradiation with radiation.
摘要翻译:公开了一种制备半导体器件的方法,包括以下步骤:将其前表面形成电路的晶片的背面粘附到辐射固化粘合剂层上,将晶片切割成芯片,漂洗,干燥,照射 具有辐射固化所述粘合剂层的粘合剂层,如果需要,使粘合片膨胀以使芯片彼此分开,然后拾取芯片,将拾取的芯片安装在引线框架上,粘合和模制以形成这样的结构 芯片的后表面部分或全部与封装模制树脂接触,其中辐射固化粘合剂层包含100重量份由丙烯酸酯和含OH基的可聚合单体的共聚物组成的丙烯酸粘合剂 和50-200重量份具有两个或更多个不饱和键的辐射聚合性化合物,并且所述可辐射固化粘合剂层的弹性模量不为 通过辐射照射固化后小于1×10 9 dyn / cm 2。
摘要:
Various embodiments provide semiconductor devices having cavity substrate structures for package-on-package assembly and methods for their fabrication. In one embodiment, the cavity substrate structure can include at least one top interconnect via formed within a top substrate. The top substrate can be disposed over a base substrate having at least one base interconnect via that is not aligned with the top interconnect via. Semiconductor dies can be assembled in an open cavity of the top substrate and attached to a base center portion of the base substrate of the cavity substrate structure. A top semiconductor package can be mounted over the top substrate of the cavity substrate structure.
摘要:
A semiconductor device (1700), which comprises a workpiece (1201) with an outline (1711) and a plurality of contact pads (1205) and further an external part (1701) with a plurality of terminal pads (1702). This part is spaced from the workpiece, and the terminal pads are aligned with the workpiece contact pads, respectively. A reflow element (1203) interconnects each of the contact pads with its respective terminal pad. Thermoplastic material (1204) fills the space between the workpiece and the part; this material adheres to the workpiece, the part and the reflow elements. Further, the material has an outline (1711) substantially in line with the outline of the workpiece, and fills the space (1707) substantially without voids. Due to the thermoplastic character of the filling material, the finished device can be reworked, when the temperature range for reflowing the reflow elements is reached.
摘要:
[Problem]Mobile electronic equipment is often dropped during use or transport, and the soldered joints of electronic parts sometimes peel off due to the impact when dropped. In addition, they undergo heat cycles in which internal coils, resistors, and the like generate heat and soldered joints increase in temperature during operation of electronic equipment and cool off during periods of non-use. With a conventional Sn—Ag base lead-free solder, the impact resistance and resistance to heat cycles of minute portions such as solder bumps were not adequate. The present invention provides a lead-free solder alloy, bumps of which have excellent impact resistance and resistance to heat cycles. Means for Solving the Problem The present invention is a lead-free solder alloy comprising 0.1—less than 2.0 mass % of Ag, 0.01-0.1 mass % of Cu, 0.005-0.1 mass % of Zn, and a remainder of Sn, to which Ga, Ge, or P may be added, and to which Ni or Co may be further added.
摘要:
A method for attaching an integrated circuit chip to an organic substrate comprising the steps of providing an integrated circuit chip having an active and a passive surface, said active surface including a protective polymer layer; activating said polymer layer by exposing it to reactive ion etching plasma, thereby increasing the surface roughness and imparting affinity to adhesion; providing an electrically insulating substrate having first and second surfaces; and contacting said second surface of said substrate to said activated polymer layer on said chip, whereby strong adhesion is exerted at the interface between said layer and said substrate, directly attaching said substrate to said chip.
摘要:
A method of producing semiconductor devices including the steps of providing a semiconductor wafer of substantially uniform thickness 22, providing a heat-radiating plate 22, and attaching the heat-radiating plate 20 to the semiconductor wafer. The assembled wafer and heat-radiating plate are diced into individual semiconductor integrated circuits having individual heat radiating plates attached thereto.