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371 条记录 (耗时 0.038 秒)

    SELF-ALIGNED III-V MOSFET DIFFUSION REGIONS AND SILICIDE-LIKE ALLOY CONTACT
    24.
    发明申请
    SELF-ALIGNED III-V MOSFET DIFFUSION REGIONS AND SILICIDE-LIKE ALLOY CONTACT 有权
    自对准III-V MOSFET扩散区和类硅合金接触

    公开(公告)号：US20130001659A1

    公开(公告)日：2013-01-03

    申请号：US13603739

    申请日：2012-09-05

    申请人： Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

    发明人： Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

    IPC分类号： H01L29/78

    CPC分类号： H01L21/2258 ,  H01L21/246 ,  H01L21/28575 ,  H01L29/41775 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66522

    摘要： A metal oxide semiconductor field effect transistor and method for forming the same include exposing portions on a substrate adjacent to a gate stack, forming a dopant layer over the gate stack and in contact with the substrate in the portions exposed and annealing the dopant layer to drive dopants into the substrate to form self-aligned dopant regions in the substrate. The dopant layer is removed. A metal containing layer is deposited over the gate stack and in contact with the substrate in the exposed portions. The metal containing layer is annealed to drive metal into the substrate to form self-aligned contact regions in a metal alloy formed in the substrate within the dopant regions. The metal layer is then removed.

    摘要翻译： 金属氧化物半导体场效应晶体管及其形成方法包括在与栅极叠层相邻的衬底上的曝光部分，在栅极叠层上形成掺杂剂层，并在暴露并退火掺杂剂层驱动的部分中与衬底接触 掺杂到衬底中以在衬底中形成自对准掺杂剂区域。 去除掺杂剂层。 在栅极叠层上沉积含金属层，并在暴露部分与衬底接触。 对含金属层进行退火以将金属驱动到衬底中，以在掺杂区域内的衬底中形成的金属合金中形成自对准接触区域。 然后去除金属层。

    UNIFORMLY DISTRIBUTED SELF-ASSEMBLED SOLDER DOT FORMATION FOR HIGH EFFICIENCY SOLAR CELLS
    27.
    发明申请
    UNIFORMLY DISTRIBUTED SELF-ASSEMBLED SOLDER DOT FORMATION FOR HIGH EFFICIENCY SOLAR CELLS 有权
    高效率太阳能电池的均匀分布式自组装焊料成型

    公开(公告)号：US20140065752A1

    公开(公告)日：2014-03-06

    申请号：US13597980

    申请日：2012-08-29

    申请人： Augustin J. Hong ,  Jeehwan Kim ,  Jae-Woong Nah ,  Devendra K. Sadana

    发明人： Augustin J. Hong ,  Jeehwan Kim ,  Jae-Woong Nah ,  Devendra K. Sadana

    IPC分类号： H01L31/18

    CPC分类号： H01L31/02366 ,  C03C15/00 ,  C03C2218/34 ,  Y02E10/50

    摘要： A method for fabricating a photovoltaic device includes performing a gettering process in a processing chamber which restricts formation of a layer of gettering materials on a substrate and forming a solder layer on the substrate. The solder layer is annealed to form uniformly distributed solder dots which grow on the substrate. The substrate is etched using the solder dots to protect portions of the substrate and form cones in the substrate such that the cones provide a three-dimensional radiation absorbing structure for the photovoltaic device.

    摘要翻译： 一种制造光伏器件的方法包括在处理室中进行吸气处理，其限制在衬底上形成吸气材料层并在衬底上形成焊料层。 将焊料层退火以形成在衬底上生长的均匀分布的焊点。 使用焊点蚀刻衬底以保护衬底的部分并在衬底中形成锥体，使得锥体为光伏器件提供三维辐射吸收结构。

    UNIFORMLY DISTRIBUTED SELF-ASSEMBLED SOLDER DOT FORMATION FOR HIGH EFFICIENCY SOLAR CELLS
    28.
    发明申请
    UNIFORMLY DISTRIBUTED SELF-ASSEMBLED SOLDER DOT FORMATION FOR HIGH EFFICIENCY SOLAR CELLS 有权
    高效率太阳能电池的均匀分布式自组装焊料成型

    公开(公告)号：US20140060628A1

    公开(公告)日：2014-03-06

    申请号：US13611047

    申请日：2012-09-12

    申请人： Augustin J. Hong ,  Jeehwan Kim ,  Jae-woong Nah ,  Devendra K. Sadana

    发明人： Augustin J. Hong ,  Jeehwan Kim ,  Jae-woong Nah ,  Devendra K. Sadana

    IPC分类号： H01L31/0236

    CPC分类号： H01L31/02366 ,  C03C15/00 ,  C03C2218/34 ,  Y02E10/50

    摘要： A substrate for photovoltaic device includes a textured surface formed from silicon-based material. The textured surface includes a plurality of cones uniformly distributed across the textured surface. The uniformly distributed cones are configured by etching from a top surface of the substrate using a self-assembled solder dot mask evaporated on the substrate prior to etching. The cones are uniformly distributed as a result of gettering a process chamber prior to forming the solder dot mask. The cones have a height/width ratio between about 1 to about 4, and the cones have a density between 108 to 109 cones/cm2.

    摘要翻译： 用于光伏器件的衬底包括由硅基材料形成的纹理表面。 纹理表面包括均匀分布在纹理化表面上的多个锥体。 均匀分布的锥体通过在蚀刻之前使用在衬底上蒸发的自组装焊点掩模从衬底的顶表面进行蚀刻而配置。 由于在形成焊点掩模之前吸收处理室，锥体均匀分布。 锥体具有约1至约4之间的高度/宽度比，并且锥体具有在108至109锥/ cm 2之间的密度。

    TRANSPARENT CONDUCTIVE ELECTRODE FOR THREE DIMENSIONAL PHOTOVOLTAIC DEVICE
    29.
    发明申请
    TRANSPARENT CONDUCTIVE ELECTRODE FOR THREE DIMENSIONAL PHOTOVOLTAIC DEVICE 审中-公开
    用于三维光电器件的透明导电电极

    公开(公告)号：US20140004648A1

    公开(公告)日：2014-01-02

    申请号：US13535868

    申请日：2012-06-28

    申请人： Keith E. Fogel ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

    发明人： Keith E. Fogel ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

    IPC分类号： H01L31/18

    CPC分类号： H01L31/02363 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1884 ,  Y02E10/50

    摘要： A method for forming a photovoltaic device includes forming a plurality of three-dimensional structures in a substrate to form a textured profile. A first transparent electrode layer is formed on the structures from a transparent conductive oxide having a metal dopant and deposited at a thickness configured to maintain the textured profile. The first transparent electrode layer is annealed to increase conductivity and transmittance. A continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer is formed on the first transparent electrode layer. A second electrode layer is deposited over the photovoltaic stack.

    摘要翻译： 形成光伏器件的方法包括在衬底中形成多个三维结构以形成纹理轮廓。 在具有金属掺杂剂的透明导电氧化物的结构上形成第一透明电极层，并以构造成保持纹理轮廓的厚度沉积。 对第一透明电极层进行退火以增加导电性和透射率。 包括N型层，P型层和本征层的连续光伏堆叠形成在第一透明电极层上。 在光伏堆栈上沉积第二电极层。