公开(公告)号：US09175382B2

公开(公告)日：2015-11-03

申请号：US13281316

申请日：2011-10-25

申请人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

发明人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C14/35

CPC分类号： C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458 ,  H01J37/3467

摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

摘要翻译： 在本发明的一个方面，提供一种处理室。 该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。 多个溅射枪中的每一个耦合到第一电源。 第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。 脉冲电源的占空比小于30％。 包括设置在距离多个溅射枪一定距离的衬底支撑件。 衬底支撑件耦合到第二电源。 第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。 还包括执行沉积工艺的方法。

公开(公告)号：US08726838B2

公开(公告)日：2014-05-20

申请号：US12963995

申请日：2010-12-09

申请人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

发明人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

IPC分类号： C23C16/50 ,  C23C16/509 ,  H01L21/3065 ,  C23C16/455 ,  C23C16/02 ,  C23C16/458 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01L21/02274 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/3065 ,  H01L21/67069

摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.

摘要翻译： 根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源 淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于 所述至少两个电极。

公开(公告)号：US20130101750A1

公开(公告)日：2013-04-25

申请号：US13281316

申请日：2011-10-25

申请人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

发明人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

IPC分类号： C23C14/34

CPC分类号： C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458 ,  H01J37/3467

摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

摘要翻译： 在本发明的一个方面，提供一种处理室。 该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。 多个溅射枪中的每一个耦合到第一电源。 第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。 脉冲电源的占空比小于30％。 包括设置在距离多个溅射枪一定距离的衬底支撑件。 衬底支撑件耦合到第二电源。 第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。 还包括执行沉积工艺的方法。

公开(公告)号：US08334015B2

公开(公告)日：2012-12-18

申请号：US12013759

申请日：2008-01-14

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC分类号： C23C16/04

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

摘要翻译： 提供组合处理室和方法。 在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同 。 通过多个流动产生不同处理的分离区域。

公开(公告)号：US20120090545A1

公开(公告)日：2012-04-19

申请号：US13332813

申请日：2011-12-21

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC分类号： C23C16/455

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

摘要翻译： 提供组合处理室和方法。 在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同 。 通过多个流动产生不同处理的分离区域。

公开(公告)号：US20090061083A1

公开(公告)日：2009-03-05

申请号：US12013729

申请日：2008-01-14

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

公开(公告)号：US08679988B2

公开(公告)日：2014-03-25

申请号：US13302777

申请日：2011-11-22

申请人： Albert Lee ,  Chi-I Lang

发明人： Albert Lee ,  Chi-I Lang

IPC分类号： H01L21/00

CPC分类号： H01L45/1616 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/146

摘要： In some embodiments, the present invention discloses plasma processing at interfaces of an ALD metal oxide film with top and bottom electrodes to improve the ReRAM device characteristics. The interface processing can comprise an oxygen inhibitor step with a bottom polysilicon electrode to prevent oxidation of the polysilicon layer, enhancing the electrical contact of the metal oxide film with the polysilicon electrode. The interface processing can comprise an oxygen enrichment step with a top metal electrode to increase the resistivity of the metal oxide layer, providing an integrated current limiter layer.

摘要翻译： 在一些实施例中，本发明公开了在ALD金属氧化物膜与顶部和底部电极的界面处的等离子体处理，以改善ReRAM器件的特性。 界面处理可以包括具有底部多晶硅电极的氧抑制剂步骤，以防止多晶硅层氧化，增强金属氧化物膜与多晶硅电极的电接触。 界面处理可以包括具有顶部金属电极的富氧步骤以增加金属氧化物层的电阻率，从而提供集成的限流器层。

公开(公告)号：US08657966B2

公开(公告)日：2014-02-25

申请号：US13058803

申请日：2009-08-12

申请人： Nikhil D. Kalyankar ,  Chi-I Lang ,  Zachary Fresco

发明人： Nikhil D. Kalyankar ,  Chi-I Lang ,  Zachary Fresco

IPC分类号： B08B3/00 ,  C11D7/00

CPC分类号： C11D11/0047 ,  B08B3/10 ,  C11D7/265 ,  C11D7/28 ,  C11D7/34 ,  C11D7/36 ,  C11D7/5004

摘要： Embodiments of the current invention describe cleaning solutions to clean the surface of a photomask, methods of cleaning the photomask using at least one of the cleaning solutions, and combinatorial methods of formulating the cleaning solutions. The cleaning solutions are formulated to preserve the optical properties of the photomask, and in particular, of a phase-shifting photomask.

摘要翻译： 本发明的实施例描述了清洁光掩模表面的清洁溶液，使用至少一种清洁溶液清洁光掩模的方法以及配制清洁溶液的组合方法。 制备清洁溶液以保持光掩模的光学性质，特别是相移光掩模。

公开(公告)号：US08609475B2

公开(公告)日：2013-12-17

申请号：US13602637

申请日：2012-09-04

申请人： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

发明人： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/16 ,  H01L21/8229

CPC分类号： H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material.

摘要翻译： 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并且在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法。

公开(公告)号：US08580697B1

公开(公告)日：2013-11-12

申请号：US13031077

申请日：2011-02-18

申请人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/02

CPC分类号： H01L21/76837 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826

摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.