公开(公告)号：US20150214013A1

公开(公告)日：2015-07-30

申请号：US14164179

申请日：2014-01-25

Applicant: Yuri GLUKHOY

Inventor： Yuri GLUKHOY

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  B05D7/22 ,  C23C14/083 ,  C23C16/405 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32807 ,  H01J2237/0213 ,  H01J2237/04 ,  Y10T29/4998

Abstract: Proposed is a method for providing uniform distribution of plasma density in a CCP plasma processing apparatus. According to the method the through gas holes of the showerhead of used in the plasma processing chamber of the apparatus are provided with conical nozzles formed on the side of the gas holes that face the gas reservoir of the cooler plate. The cone angle θ of the nozzles decreases in the direction from the peripheral portion to the central area of the showerhead in the range from 120° to 0°. Since the conical nozzles increase the gas gap between the showerhead and the cooler plate, more favorable conditions are created for electric breakdown. In order to protect the surfaces of the conical nozzles and gas holes from deterioration by hollow cathode discharge, these surface are coated by a protective coating resistant to electrical breakdown and chemical corrosion.

Abstract translation: 提出了一种在CCP等离子体处理装置中提供等离子体密度均匀分布的方法。 根据该方法，在装置的等离子体处理室中使用的喷头的通气孔设置有形成在与冷却器板的气体储存器相对的气孔侧的锥形喷嘴。 锥角与角度; 的喷嘴在从120°至0°的范围内从喷墨头的周边部分到中心区域的方向上减小。 由于锥形喷嘴增加了淋浴头和冷却板之间的气隙，因此为电击穿产生了更有利的条件。 为了保护锥形喷嘴和气孔的表面免受空心阴极放电的损坏，这些表面涂有耐电击穿和化学腐蚀的保护涂层。

公开(公告)号：US20150129420A1

公开(公告)日：2015-05-14

申请号：US13582474

申请日：2012-06-22

Applicant: Sang Hyun Park ,  Dong Hyun Lee ,  Hyun Pil Oh ,  Kwang Jin Jeon ,  Jin Haon Kwon ,  Sung Jin Park

Inventor： Sang Hyun Park ,  Dong Hyun Lee ,  Hyun Pil Oh ,  Kwang Jin Jeon ,  Jin Haon Kwon ,  Sung Jin Park

IPC: H01J37/32

CPC classification number: H01J37/32807 ,  B01J3/002 ,  C23C14/06 ,  C23C14/243

Abstract: Disclosed is a substrate processing system with a damage preventing function, comprising: a fluid tank which stores fluid; a chamber which receives the fluid from the fluid tank and provides a space where a substrate is processed; a pipe which connects the fluid tank and the chamber and through which the fluid flows; and a damage preventing unit which allows the fluid tank to be changed in position corresponding to thermal expansion caused in the pipe by receiving heat as the fluid flows in the pipe.With this, the substrate processing system with the damage preventing function for allowing the fluid tank to correspond to change in volume due to the thermal expansion of the pipe and preventing the fluid tank from damage is provided.

Abstract translation: 公开了一种具有防损功能的基板处理系统，包括：存储流体的流体箱; 接收来自流体箱的流体并提供衬底被处理的空间的腔室; 连接流体箱和室的管道，流体流过该管道; 以及损坏防止单元，其允许流体箱在流体在管中流动时通过接受热而在管道中引起的热膨胀相应地改变位置。 由此，提供了具有防止损伤的功能的基板处理系统，用于允许流体槽由于管道的热膨胀而导致体积变化，并且防止流体箱损坏。

公开(公告)号：US20140220261A1

公开(公告)日：2014-08-07

申请号：US14117213

申请日：2012-05-11

Applicant: Jes Asmussen ,  Yajun Gu ,  Timothy A. Grotjohn

Inventor： Jes Asmussen ,  Yajun Gu ,  Timothy A. Grotjohn

IPC: C23C16/517 ,  H01J37/32 ,  C30B25/10

CPC classification number: C23C16/517 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J37/32807 ,  H01J2237/32

Abstract: Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.

Abstract translation: 公开了微波等离子体辅助反应器，例如化学气相沉积（MPCVD）反应器。 所公开的反应器在高压（> 180-320乇）和高功率密度（> 150W / cm 3）下工作，从而实现快速沉积材料的高沉积速率CVD工艺。 特别地，描述了反应器设计实例，当在180-320乇压力范围内操作时，快速CVD合成高质量多晶（PCD）和单晶金刚石（SCD）。 改进的反应器包括在主微波室中等离子体室附近的径向收缩（以及可选地在电磁波源附近的组合膨胀，随后是收缩），因为电磁能量从电磁波源传播到 等离子体/沉积室。

公开(公告)号：US08562266B2

公开(公告)日：2013-10-22

申请号：US13025472

申请日：2011-02-11

Applicant: Gregory Sexton

Inventor： Gregory Sexton

IPC: F16B23/00

CPC classification number: F16B35/042 ,  H01J37/32807 ,  H01J37/32908

Abstract: A fastener assembly for parts of a plasma chamber. The fastener assembly includes a bolt with a tool engaging socket and a spring-loaded pin which fits in a through hole of the bolt. When installed, the spring-loaded pin substantially fills the space in the socket and thus prevents parasitic plasma from forming in spaces between opposed surfaces of the pin and bolt. When a tool such as a hex key is inserted into the socket, the spring-loaded pin retracts and the tool rotates the bolt to attach an upper part to a lower part by engaging threads of the bolt with a threaded hole in the lower part.

Abstract translation: 用于等离子体室的部件的紧固件组件。 紧固件组件包括具有工具接合插座的螺栓和装配在螺栓的通孔中的弹簧加载销。 当安装时，弹簧加载销基本上填充插座中的空间，从而防止在销和螺栓的相对表面之间的空间中形成寄生等离子体。 当诸如六角扳手的工具插入插座中时，弹簧加载的销缩回，并且工具旋转螺栓以通过将螺栓的螺纹与下部的螺纹孔接合而将上部附接到下部。

公开(公告)号：US20130200494A1

公开(公告)日：2013-08-08

申请号：US13366340

申请日：2012-02-05

Applicant: Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

Inventor： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

IPC: H01L29/93 ,  H01L21/329

CPC classification number: H01J37/32807 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642

Abstract: A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.

Abstract translation: 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化 交界处

公开(公告)号：US20120249986A1

公开(公告)日：2012-10-04

申请号：US13430905

申请日：2012-03-27

Applicant: Keisuke Tanaka ,  Kazuo Sawai ,  Hiroshi Nagahata

Inventor： Keisuke Tanaka ,  Kazuo Sawai ,  Hiroshi Nagahata

IPC: G03B27/52

CPC classification number: H01J37/32642 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32807 ,  H01J37/3288 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01J2237/3343 ,  H01L21/3065

Abstract: A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.

Abstract translation: 确定方法，控制方法，确定装置，图案形成系统和存储介质可以准确且快速地确定对焦环的更换时间。 确定方法能够确定围绕衬底的聚焦环的更换时间，以通过在衬底上蚀刻膜形成图案来增加衬底表面中的图案的均匀性。 确定方法包括测量图案的形状或临界尺寸; 以及基于测量的形状或所测量的图案的临界尺寸来确定聚焦环的替换时间。

公开(公告)号：US20110308733A1

公开(公告)日：2011-12-22

申请号：US13115289

申请日：2011-05-25

Applicant: Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

Inventor： Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

IPC: C23F1/08 ,  H05H1/24

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01J37/32807

Abstract: There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount.

Abstract translation: 提供了能够在确保供给气体的同时进行等离子体处理的等离子体处理装置。 等离子体处理装置包括外部气体供给构件，其具有用于供给等离子体处理气体的气体供给开口和构造成在处理室内支撑外部气体供给构件并用作气体供给构件支撑装置的护套。 夹套包括三个支撑构件，其安装成连接外部气体供给构件和侧壁，并且在外部气体供给构件延伸并安装固定到侧壁的方向上以一定距离布置，以便将支撑构件安装在其中 。 支撑构件包括固定到第一安装件的第一支撑构件和可移动地支撑在第二安装件中的第二支撑构件。

公开(公告)号：US20240234099A1

公开(公告)日：2024-07-11

申请号：US18610723

申请日：2024-03-20

Applicant: Tokyo Electron Limited

Inventor： Michishige Saito ,  Kazuya Nagaseki ,  Shota Kaneko

IPC: H01J37/32 ,  B28B1/00

CPC classification number: H01J37/32495 ,  B28B1/001 ,  H01J37/32559 ,  H01J37/32724 ,  H01J37/32807 ,  H01J2237/332 ,  H01J2237/334

Abstract: A forming method of a component for use in a plasma processing apparatus includes irradiating, while supplying a source material of a first ceramic and a source material of a second ceramic different from the first ceramic, an energy beam to the source material of the first ceramic and the source material of the second ceramic.

公开(公告)号：US12033838B2

公开(公告)日：2024-07-09

申请号：US17196089

申请日：2021-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Joji Takayoshi ,  Ryuta Akimoto ,  Takehito Watanabe

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/67

CPC classification number: H01J37/32935 ,  H01J37/32605 ,  H01J37/32807 ,  H01J37/32917 ,  H01J37/244 ,  H01J37/32091 ,  H01J37/32642 ,  H01L21/67069

Abstract: A plasma processing apparatus including a processing container and a conductive member, includes a plasma generator configured to generate plasma in the processing container, a power application part configured to apply a DC power to the conductive member in a state in which plasma is generated in the processing container by the plasma generator, a measurement part configured to measure a physical quantity related to the DC power applied by the power application part, and a calculator configured to obtain a wear amount of the conductive member using the measured physical quantity related to the DC power in a correlation function between the wear amount of the conductive member and the physical quantity related to the DC power.

公开(公告)号：US12002658B2

公开(公告)日：2024-06-04

申请号：US17598783

申请日：2020-03-26

Applicant: Lam Research Corporation

Inventor： Sreeram Sonti

IPC: H01J37/32 ,  G01M3/16 ,  G01M3/18 ,  G08B21/20

CPC classification number: H01J37/32522 ,  G01M3/165 ,  G01M3/186 ,  G08B21/20 ,  H01J37/32724 ,  H01J37/32807 ,  H01J37/3288 ,  H01J37/32357

Abstract: In one embodiment, the disclosed apparatus is a process cooling-water isolation system used in a process tool. The system includes an isolation valve coupled between a water supply and an inlet of one or more components in a process-module water-cooling circuit. An open device allows cooling water to flow to the one or more components, while a close device prevents cooling water from flowing to the one or more components. At least one water-leak sensor is coupled to the close device to detect a water leak within the process tool. A check valve having an inlet port is coupled to an outlet of the one or more components, and an outlet port is coupled to a water-return reservoir. The check valve prevents water from back-flowing from the water-return reservoir into the one or more components. Other apparatuses and methods are disclosed.