公开(公告)号：US20230207354A1

公开(公告)日：2023-06-29

申请号：US18116759

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Devendra Channappa Holeyannavar ,  Sandesh Doddamane Ramappa ,  Dean C. Hruzek ,  Michael R. Rice ,  Jeffrey A. Brodine

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677

CPC classification number: H01L21/67178 ,  H01L21/6719 ,  H01L21/67184 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67379 ,  H01L21/67389 ,  H01L21/67769 ,  H01L21/67775 ,  H01L21/67207

Abstract: A platform is of a side storage pod. The platform includes an upper surface and kinematic pins extending from the upper surface within a chamber of the side storage pod to engage a lower surface of a side storage container in the chamber to level the side storage container in the chamber.

公开(公告)号：US11649559B2

公开(公告)日：2023-05-16

申请号：US16266646

申请日：2019-02-04

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Chun Yan ,  Hua Chung ,  Schubert S. Chu

IPC: C30B25/16 ,  C30B25/08 ,  C30B25/00 ,  C30B33/00 ,  C23C16/44 ,  C23C16/30 ,  C23C16/48 ,  C23C16/56 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B29/40 ,  H01L21/67 ,  C30B35/00 ,  H01L21/225 ,  H01L21/30 ,  C30B29/06

CPC classification number: C30B25/08 ,  C23C16/301 ,  C23C16/4405 ,  C23C16/481 ,  C23C16/56 ,  C30B25/00 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B25/165 ,  C30B29/40 ,  C30B33/00 ,  C30B35/00 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67253 ,  C30B29/06 ,  H01L21/2252 ,  H01L21/30 ,  H01L21/67201

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

公开(公告)号：US20190221457A1

公开(公告)日：2019-07-18

申请号：US16366437

申请日：2019-03-27

Applicant: SCREEN Semiconductor Solutions Co., Ltd.

Inventor： Yoshiteru Fukutomi ,  Tsuyoshi Mitsuhashi ,  Hiroyuki Ogura ,  Kenya Morinishi ,  Yasuo Kawamatsu ,  Hiromichi Nagashima

IPC: H01L21/67 ,  B05C13/00 ,  B05C13/02 ,  G03F7/26

CPC classification number: H01L21/67178 ,  B05B14/43 ,  B05B14/44 ,  B05C13/00 ,  B05C13/02 ,  B05D3/0486 ,  G03F7/26 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67225 ,  H01L23/34 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

Abstract: A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section includes performing resist film forming treatment in parallel on a plurality of stories provided in the treating section and performing developing treatment in parallel on a plurality of stories provided in the treating section.

公开(公告)号：US20190067054A1

公开(公告)日：2019-02-28

申请号：US16142916

申请日：2018-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Sun Choi ,  Yun-Kwang Jeon ,  Taekyun Kang

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673 ,  B01D46/00 ,  B01D46/44 ,  B01D46/42

CPC classification number: H01L21/67196 ,  B01D46/0045 ,  B01D46/4263 ,  B01D46/448 ,  B01D2279/45 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67248 ,  H01L21/67389 ,  H01L21/67742 ,  H01L21/67778

Abstract: The inventive concepts provide apparatuses for transferring a substrate and/or apparatuses for processing a substrate including the same. The substrate transferring apparatus including a chamber, a filter assembly disposed in a chamber to provide external air into the chamber, and an additional assembly including a moisture removing part and a purge gas providing part sequentially stacked on the filter assembly may be provided. The filter assembly may be coupled to the additional assembly.

公开(公告)号：US20190051545A1

公开(公告)日：2019-02-14

申请号：US16159709

申请日：2018-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Wei Lu ,  Hon-Lin Huang ,  Hung-Chih Wang

IPC: H01L21/67 ,  H01L21/673 ,  B05C11/06 ,  C23C18/16

CPC classification number: H01L21/67196 ,  B05C11/06 ,  C23C18/1691 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67303

Abstract: A semiconductor processing station including a central transfer chamber, a load lock chamber disposed adjacent to the central transfer chamber, and a cooling stage disposed adjacent to the load lock chamber and the central transfer chamber is provided. The load lock chamber is adapted to contain a wafer carrier including a plurality of wafers. The central transfer chamber communicates between the cooling stage and the load lock chamber to transfer a wafer of the plurality of wafers between the cooling stage and the load lock chamber.

公开(公告)号：US20180272390A1

公开(公告)日：2018-09-27

申请号：US15469113

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Ernesto ULLOA

IPC: B08B7/00 ,  H01L21/677 ,  H01L21/02 ,  H01L21/3065

CPC classification number: B08B7/0035 ,  H01L21/02046 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67303 ,  H01L21/6773 ,  H01L21/67757

Abstract: Embodiments of the disclosure generally relate to an improved batch processing load lock chamber, a cluster tool having the same and a method of using the improved load lock chamber to clean a plurality of substrates disposed within. In one embodiment, a load lock chamber includes a chamber body, a cassette disposed in the chamber body, a remote plasma source, a plurality of inlet nozzles and a plurality of outlet ports. The chamber body has a plurality of substrate transfer slots formed therein. The cassette has a plurality of substrate storage slots and is configured to move up and down within the chamber body. The plurality of inlet nozzles is coupled to the remote plasma source and faces a processing region defined within the chamber body. The plurality of outlet ports faces the plurality of inlet nozzles across the processing region.

公开(公告)号：US20180261478A1

公开(公告)日：2018-09-13

申请号：US15907253

申请日：2018-02-27

Applicant: SCREEN HOLDINGS CO., LTD.

Inventor： Akitsugu UEDA

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/268 ,  G05D7/06

CPC classification number: H01L21/67115 ,  G05D7/0641 ,  H01L21/2686 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/68735 ,  H01L21/6875

Abstract: An untreated semiconductor wafer is transferred from an indexer unit to a treatment chamber via a first cool chamber and a transfer chamber in this order. A treated semiconductor wafer subjected to heating treatment in the treatment chamber is transferred to the indexer unit via the transfer chamber and the first cool chamber in this order. For a predetermined time after an untreated semiconductor wafer is transferred into the first cool chamber, nitrogen gas is supplied into the first cool chamber at a large supply flow rate and exhausting from the first cool chamber is performed at a large exhaust flow rate. An oxygen concentration in the first cool chamber sharply decreases to enable the semiconductor wafer after the heating treatment to be prevented from being oxidized.

公开(公告)号：US10062590B2

公开(公告)日：2018-08-28

申请号：US15676687

申请日：2017-08-14

Applicant: Lam Research Corporation

Inventor： Scott Wong ,  Damon Tyrone Genetti ,  Derek John Witkowicki ,  Alex Paterson ,  Richard H. Gould ,  Austin Ngo ,  Marc Estoque

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67303 ,  H01L21/6732 ,  H01L21/67369 ,  H01L21/67379 ,  H01L21/67383 ,  H01L21/67386 ,  H01L21/67389 ,  H01L21/67742 ,  H01L21/68707

Abstract: A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first support column is disposed on the first lateral side proximal to the front side. A second support column is disposed on the second lateral side proximal to the front side. A third support column is disposed on the first lateral side proximal to back side and a fourth support column is disposed on the second lateral side proximal to the back side. Each of the support columns includes a plurality of support fingers distributed lengthwise and directed inward. A first hard stop column is disposed parallel to the third support column and a second hard stop column is disposed parallel to the fourth support column. A shell structure connected to the base plate is configured to enclose the first, second third and fourth support columns, top plate and first and second hard stop columns and includes a front opening disposed on the front side of the base plate. A door is mated to the front opening and includes retention assembly for securing consumable parts in the pod, when received in the pod.

公开(公告)号：US20180158714A1

公开(公告)日：2018-06-07

申请号：US15465903

申请日：2017-03-22

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Takashi YAHATA ,  Tadashi TAKASAKI

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/458 ,  C23C16/54 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67766

Abstract: A substrate processing apparatus and technique, capable of processing substrates regardless of the types of substrates, include a loadlock chamber accommodating a first support part and a second support part for supporting a wafer; a first transfer mechanism including first tweezers configured to transfer the substrate into or out of the loadlock chamber through a first side of the loadlock chamber; a second transfer mechanism including second tweezers configured to transfer the substrate into or out of the loadlock chamber through a second side of the loadlock chamber; and a reactor where the substrate is processed. The first support part includes first support mechanisms spaced apart by a first distance along a direction perpendicular to an entering direction of the first tweezers or the second tweezers, and the second support part includes second support mechanisms spaced apart by a second distance smaller than the first distance.

公开(公告)号：US20180151385A1

公开(公告)日：2018-05-31

申请号：US15406143

申请日：2017-01-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Meng-Je Chuang ,  Wan-Chun Kuan ,  Yi-Wei Chiu ,  Tzu-Chan Weng

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/823431 ,  H01L29/66742 ,  H01L29/66795

Abstract: A chamber door, such as an etch chamber door may be heated during etch processing to, e.g., prevent etching by-products from adhering to the etch chamber door. Such heating of the etch chamber door, however, can impact the processing parameters and result in non-uniform processing, such as non-uniform etching characteristics across a semiconductor wafer, for instance. An insulator, such as an insulating film covering surfaces of the heated door, can reduce or eliminate transmission of heat from the door to a work piece such as a semiconductor wafer and this reduce or eliminate the non-uniformity of the process results.