Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating
    21.
    发明授权
    Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating 失效
    具有改进的衍射光栅的增益耦合分布反馈半导体激光器

    公开(公告)号:US07773652B2

    公开(公告)日:2010-08-10

    申请号:US11475136

    申请日:2006-06-27

    CPC classification number: H01S5/1228

    Abstract: In a gain-coupled distributed feedback semiconductor laser, a coating of a low reflectivity is provided on a front facet from which laser light is emitted and a coating of a high reflectivity is provided on a rear facet, thus forming asymmetric coatings. The semiconductor laser has a structure in which an absorption diffraction grating is located along an optical waveguide, and the diffraction grating includes a phase shift region.

    Abstract translation: 在增益耦合分布式反馈半导体激光器中,在发射激光的前刻面上提供低反射率的涂层,并且在后面提供高反射率的涂层,从而形成不对称涂层。 半导体激光器具有其中吸收衍射光栅沿着光波导定位的结构,并且衍射光栅包括相移区域。

    Use of current channeling in multiple node laser systems and methods thereof
    22.
    发明授权
    Use of current channeling in multiple node laser systems and methods thereof 有权
    在多节点激光系统中使用电流沟道及其方法

    公开(公告)号:US07646797B1

    公开(公告)日:2010-01-12

    申请号:US12178028

    申请日:2008-07-23

    Abstract: Current channels, blocking areas, or strips in a semiconductor laser are used to channel injected current into the antinodal region of the optical standing wave present in the optical cavity, while restricting the current flow to the nodal regions. Previous devices injected current into both the nodal and antinodal regions of the wave, which is fed by the population inversion created in the active region by the injected electrons and holes, but inversion created in the nodal regions is lost to fluorescence or supports the creation of undesirable competing longitudinal modes, causing inefficiency. Directing current to the antinodal regions where the electric field is at its maximum causes a selected longitudinal mode to preferentially oscillate regardless of where the longitudinal mode lies with respect to the gain curve. In one embodiment, exacting fabrication of the Fabry-Perot cavity correlates the current channels to antinodal regions, vis-a vis current blocking areas, strips or segmented layers.

    Abstract translation: 半导体激光器中的电流通道,阻挡区域或条带用于将注入的电流引导到存在于光学腔中的光驻波的抗结块区域,同时限制电流到节点区域。 以前的装置将电流注入到波的节点和抗结点区域中,该区域由被注入的电子和空穴在有源区域中产生的群体反转馈送,但是在节点区域中产生的反转会失去荧光或支持产生 不良竞争的纵向模式,导致效率低下。 将电流引导到电场处于其最大值的抗结区,导致所选择的纵向模式优先振荡,而不管纵向模式相对于增益曲线位于何处。 在一个实施例中,法布里 - 珀罗腔的严格制造使得当前通道与抗结块区域相对于电流阻挡区域,条带或分段层相关。

    Quantum nano-structure semiconductor laser
    26.
    发明授权
    Quantum nano-structure semiconductor laser 失效
    量子纳米结构半导体激光器

    公开(公告)号:US07463661B2

    公开(公告)日:2008-12-09

    申请号:US10505770

    申请日:2003-02-24

    Applicant: Mutsuo Ogura

    Inventor: Mutsuo Ogura

    Abstract: On a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction Is of advance of an oscillated laser beam and mutually disposed in parallel along the direction Is of advance of the laser beam, a plurality of quantum wires (11) are formed on the V-grooves by selective growth of a Group III-V compound. The plurality of quantum wires are adapted to serve as limited-length active layer regions mutually disposed in parallel along the direction Is of advance of the laser beam with a period of an integer times of a quarter wavelength in a medium of a laser active layer and individually corresponding to stripe widths of laser. Consequently, a quantum nano-structure semiconductor laser satisfying at least one, or preferably both, of the decrease of a threshold and the stabilization of an oscillation frequency as compared with a conventional countertype can be provided.

    Abstract translation: 在具有多个V形槽的槽形半导体衬底上,多个V形槽在垂直于振荡的激光束的前进方向Is的方向上分别延伸并且沿着激光束的前进方向Is并行地相互设置,多个量子线 11)通过III-V族化合物的选择性生长形成在V形槽上。 多个量子线适合用作在激光有源层的介质中沿着激光束的前进方向的平均相互配置的具有四分之一波长整数倍的周期的有限长度的有源层区域,以及 分别对应于激光的条纹宽度。 因此,可以提供与传统的逆型相比,满足阈值的降低和振荡频率的稳定化中的至少一个,或优选两者的量子纳米结构半导体激光器。

    Low loss grating for high efficiency wavelength stabilized high power lasers
    27.
    发明授权
    Low loss grating for high efficiency wavelength stabilized high power lasers 有权
    用于高效率波长稳定的大功率激光器的低损耗光栅

    公开(公告)号:US07457341B2

    公开(公告)日:2008-11-25

    申请号:US11360752

    申请日:2006-02-23

    Abstract: A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, together with the measured results of a reduction to practice of a particular embodiment.

    Abstract translation: 低光损耗和高效率光栅被放置在广域大功率激光二极管或单空间模式激光二极管中,以窄化光谱宽度并稳定发射波长。 呈现了光栅配置的几个实施例,以及减少到特定实施例的实践的测量结果。

    Semiconductor laser
    30.
    发明授权
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号:US07277465B2

    公开(公告)日:2007-10-02

    申请号:US10642611

    申请日:2003-08-19

    Abstract: In a refractive index coupling distributed semiconductor laser having a Λ/2-phase-shift distributed feedback structure with a diffraction grating having a refractive index coupling property on an active layer, when viewed in a light distributed feedback direction, a value of (duty of a high refractive index portion)/(duty of a low refractive index portion) of a diffraction grating in a rear end face region is larger than that of a diffraction grating in a front end face region. In this manner, a coupling coefficient κ2 in a front end face region of a conventional semiconductor laser is smaller than a coupling coefficient κ1 in a rear end face region and is larger than 100 cm−1.

    Abstract translation: 在具有λ/ 2相移分布反馈结构的折射率耦合分布式半导体激光器中,在有源层上具有折射率耦合特性的衍射光栅,当在光分布反馈方向上观察时, 衍射光栅在后端面区域的高折射率部分/(低折射率部分的占空比)大于前端面区域中的衍射光栅的高折射率部分)。 以这种方式,常规半导体激光器的前端面区域中的耦合系数kappa2小于后端面区域中的耦合系数kappa1,并且大于100cm -1。

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