公开(公告)号：US20240090194A1

公开(公告)日：2024-03-14

申请号：US18232413

申请日：2023-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi SATO ,  Ryota HODO ,  Yuta IIDA ,  Tomoaki MORIWAKA

IPC: H10B12/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L23/532

CPC classification number: H10B12/30 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3212 ,  H01L23/5329 ,  H10B12/02

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

公开(公告)号：US20240088232A1

公开(公告)日：2024-03-14

申请号：US18517115

申请日：2023-11-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei NEI ,  Tsutomu MURAKAWA ,  Toshihiko TAKEUCHI ,  Kentaro SUGAYA

IPC: H01L29/24 ,  H01L27/12 ,  H10B12/00

CPC classification number: H01L29/24 ,  H01L27/1225 ,  H10B12/312

Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.

公开(公告)号：US20240087820A1

公开(公告)日：2024-03-14

申请号：US18237584

申请日：2023-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya GOTO ,  Ai NAKAGAWA ,  Yuika SATO

IPC: H01G11/78 ,  H01G11/80 ,  H01G11/82 ,  H01M50/119 ,  H01M50/133

CPC classification number: H01G11/78 ,  H01G11/80 ,  H01G11/82 ,  H01M50/119 ,  H01M50/133 ,  H01M10/425

Abstract: A repeatedly bendable power storage device. A highly reliable power storage device. A long-life power storage device. A repeatedly bendable electronic device. A flexible electronic device. The power storage device includes a film, a positive electrode, and a negative electrode. The film includes a plurality of projections. A difference between the maximum height and the minimum height of a surface of the film is greater than or equal to 0.15 mm and less than 0.8 mm. The modulus of rigidity of the film is less than 6.5×109 N. The film includes a metal layer. The thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm. The positive electrode and the negative electrode are surrounded by the film.

公开(公告)号：US20240085944A1

公开(公告)日：2024-03-14

申请号：US18371552

申请日：2023-09-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA

IPC: G06F1/16

CPC classification number: G06F1/1601 ,  G06F1/1626 ,  G06F1/1637 ,  G02F1/133308

Abstract: A display device includes a display panel mounted on a curved surface, and driver circuits including circuit elements which are mounted on a plurality of plane surfaces provided on the back of the curved surface in a stepwise shape along the curved surface.

公开(公告)号：US11929426B2

公开(公告)日：2024-03-12

申请号：US17270492

申请日：2019-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Naoki Okuno ,  Hiroki Komagata

IPC: H01L29/66 ,  H01L21/383 ,  H01L21/443 ,  H01L27/12 ,  H01L29/40 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/383 ,  H01L21/443 ,  H01L29/401 ,  H01L27/1207 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device with high reliability is provided. The present invention relates to a method for manufacturing a transistor including an oxide semiconductor. A stacked-layer structure of an oxide semiconductor and an insulator functioning as a gate insulator is subjected to microwave-excited plasma treatment, whereby the carrier concentration of the oxide semiconductor is reduced and the barrier property of the gate insulator is improved. In addition, a conductor functioning as an electrode and the insulator functioning as a gate insulator are formed in contact with the oxide semiconductor and then the microwave-excited plasma treatment is performed, whereby a high-resistance region and a low-resistance region can be formed in the oxide semiconductor in a self-aligned manner. Moreover, the microwave-excited plasma treatment is performed under an atmosphere containing oxygen with a high pressure, whereby a transistor having favorable electrical characteristics can be provided.

公开(公告)号：US11928988B2

公开(公告)日：2024-03-12

申请号：US17830377

申请日：2022-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yosuke Tsukamoto ,  Daiki Nakamura ,  Daisuke Furumatsu ,  Kazuhiko Fujita ,  Kyoichi Mukao ,  Junya Maruyama

IPC: H10K50/00 ,  G09F9/30 ,  G09F9/40 ,  H05B33/06

CPC classification number: G09F9/30 ,  G09F9/40 ,  H05B33/06 ,  H10K50/00

Abstract: A plurality of display panels having a curved surface are placed in a limited space.
Two, or three or more display panels are combined to form one display region having a T-shaped outer edge as one screen, and a driver can curve part of the display panel as appropriate so that the driver can see the screen easily. A first display panel or a second display panel has flexibility and includes a position adjustment function of curving an end portion. That is, by curving part of the display panel, the user can see the display panel easily. The in-car design can also be varied.

公开(公告)号：US11927862B2

公开(公告)日：2024-03-12

申请号：US18115017

申请日：2023-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Jun Koyama ,  Shunpei Yamazaki

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1362 ,  G09G3/36 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G02F1/136

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/136286 ,  G09G3/3622 ,  H01L27/1225 ,  H01L27/1244 ,  H01L29/45 ,  H01L29/7869 ,  G02F1/13606 ,  G02F1/13624 ,  G02F1/136295 ,  G02F2202/10 ,  G09G2300/0426

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

公开(公告)号：US20240079499A1

公开(公告)日：2024-03-07

申请号：US18381668

申请日：2023-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01G15/006 ,  G02F1/134309 ,  G02F1/136213 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02609 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H10K59/1213

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US20240079479A1

公开(公告)日：2024-03-07

申请号：US18388883

申请日：2023-11-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/022 ,  H01L21/02263 ,  H01L27/1225 ,  H01L29/513 ,  H01L29/78609 ,  H01L29/7869

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US11925097B2

公开(公告)日：2024-03-05

申请号：US18134638

申请日：2023-04-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Taisuke Kamada ,  Ryo Hatsumi ,  Daisuke Kubota ,  Naoaki Hashimoto ,  Tsunenori Suzuki ,  Harue Osaka ,  Satoshi Seo

IPC: H10K65/00 ,  H10K39/32 ,  H10K50/16 ,  H10K50/17 ,  H10K50/86 ,  H10K59/12 ,  H10K59/40 ,  H10K101/30

CPC classification number: H10K65/00 ,  H10K39/32 ,  H10K50/16 ,  H10K50/17 ,  H10K50/865 ,  H10K59/12 ,  H10K59/40 ,  H10K2101/30

Abstract: An object is to provide a highly reliable display unit having a function of sensing light. The display unit includes a light-receiving device and a light-emitting device. The light-receiving device includes an active layer between a pair of electrodes. The light-emitting device includes a hole-injection layer, a light-emitting layer, and an electron-transport layer between a pair of electrodes. The light-receiving device and the light-emitting device share one of the electrodes, and may further share another common layer between the pair of electrodes. The hole-injection layer is in contact with an anode and contains a first compound and a second compound. The electron-transport property of the electron-transport layer is low; hence, the light-emitting layer is less likely to have excess electrons. Here, the first compound is the material having a property of accepting electrons from the second compound.