Abstract:
A memory controller is operable in an error detection/correction mode in which N syndrome values apply to N data words of a data volume, respectively, but a single parity bit is shared across all N data words of the data volume.
Abstract:
A memory system in which a timing drift that would occur in distribution of a first timing signal for data transport in a memory device is determined by measuring the actual phase delays occurring in a second timing signal that has a frequency lower than that of the first timing signal and is distributed in one or more circuits mimicking the drift characteristics of at least a portion of distribution of the first timing signal. The actual phase delays are determined in the memory device and provided to a memory controller so that the phases of the timing signals used for data transport may be adjusted based on the determined timing drift.
Abstract:
A system includes a first integrated circuit configured to operate in at least a normal mode and a test mode and a second integrated circuit, where both the first integrated circuit and the second integrated circuit are disposed within a same semiconductor device package. The system further includes a first terminal, external to the semiconductor device package, electronically coupled to the first integrated circuit and the second integrated circuit. The first terminal is electronically coupled to a buffer in the second integrated circuit and used to convey signals to or from the first integrated circuit.
Abstract:
Methods and apparatuses featuring a multiplying injection-locked oscillator are described. Some embodiments include a pulse-generator-and-injector and one or more injection-locked oscillators. The outputs of the pulse-generator-and-injector can be injected into corresponding injection points of an injection-locked oscillator. In embodiments that include multiple injection-locked oscillators, the outputs of each injection-locked oscillator can be injected into the corresponding injection points of the next injection-locked oscillator. Some embodiments reduce deterministic jitter by dynamically modifying the loop length of an injection-locked oscillator, and/or by using a duty cycle corrector, and/or by multiplexing/blending the outputs from multiple delay elements of an injection-locked oscillator.
Abstract:
In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.
Abstract:
An integrated circuit includes a plurality of receivers, each having a clock and data recovery circuit. A first local clock recovery circuit in a first receiver can be caused to produce a test clock which simulates a condition to be tested, and while a second receiver in the plurality of receivers that includes a second local clock recovery circuit is caused to use the test clock in place of the reference clock while receiving a test data sequence at its input. The clock and data recovery circuits in the receivers can include clock control loops responsive to loop control signals to modify the selected reference clock to generate the local clock in response to selective one of (i) a corresponding data signal for normal operation or during a test, and (ii) a test signal applied to the clock control loop in which case the test clock is produced.
Abstract:
Pixels within an image sensor pixel array are sampled by corresponding conditional read circuitry. A zero pixel value is outputted for each pixel associated with a sample less than a conversion threshold, and a saturated pixel value is outputted for each pixel associated with a sample greater than or equal to a saturation threshold. Samples greater than or equal to the conversion threshold and less than the saturation threshold are converted by an ADC, and a converted pixel value is output for each associated above threshold pixel. The ADC (along with any corresponding amplifiers) are powered on for a variable period depending on the number of pixels needing conversion during the conversion of such samples during a read period, and are powered off for the remainder of the read period.
Abstract:
A self-resetting pixel having a memory element to record occurrence of an asynchronous pixel reset and circuitry to enable the memory element to be digitally sampled and cleared is disclosed, together with embodiments of digital image sensors formed by arrays or other collections of such pixels. By marking occurrence of asynchronous reset events within an in-pixel memory element that may be digitally oversampled during an exposure interval (i.e., repeatedly read-out in the form of, for example, a single-bit), it becomes possible to check for and detect asynchronous pixel reset events frequently and efficiently.
Abstract:
A decision feedback equalizer is calibrated to compensate for estimated inter-symbol interference in a received signal and offsets of sampling devices. The decision feedback equalizer is configured so that an output signal of a sampling circuit represents a comparison between an input signal and a reference of the sampling circuit under calibration. An input signal is received over a communication channel that includes a predetermined pattern. The predetermined pattern is compared to the output signal to determine an adjusted reference for configuring the sampling circuit that accounts for both offset and inter-symbol interference effects.
Abstract:
In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.