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公开(公告)号：USD676395S1
公开(公告)日：2013-02-19
申请号：US29408955
申请日：2011-12-19
Applicant: Christopher P. Hussell , Peter Scott Andrews , Jesse Colin Reiherzer , David T. Emerson
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公开(公告)号：US08167674B2
公开(公告)日：2012-05-01
申请号：US11956989
申请日：2007-12-14
Applicant: Christopher P. Hussell , David T. Emerson
Inventor： Christopher P. Hussell , David T. Emerson
CPC classification number: H01L33/50 , H01L2224/32013 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing an LED lamp is disclosed. The method includes admixing an uncured curable liquid resin and a phosphor, dispensing the uncured admixture on an LED chip, centrifuging the chip and the admixture to disperse the phosphor particles in the uncured resin, and curing the resin while the phosphor particles remain distributed.
Abstract translation: 公开了一种制造LED灯的方法。 该方法包括混合未固化的可固化液体树脂和荧光体，将未固化的混合物分配在LED芯片上，离心芯片和混合物以将荧光体颗粒分散在未固化的树脂中，并在荧光体颗粒保持分布的同时固化树脂。
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公开(公告)号：US07872268B2
公开(公告)日：2011-01-18
申请号：US11110545
申请日：2005-04-20
Applicant: David T. Emerson
Inventor： David T. Emerson
IPC: H01L33/00 , H01L31/0312
CPC classification number: H01L33/007 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0066 , H01L33/12
Abstract: A semiconductor photonic device and associated method are disclosed. The device includes a substrate and a buffer structure on the substrate. The buffer structure is formed of a discontinuous layer of aluminum gallium nitride and a gallium nitride layer on the aluminum gallium nitride layer having a thickness that functionally minimizes the number of defects propagated through it. At least two doped Group III nitride layers are on the buffer structure, with the layers being of opposite conductivity type from one another for providing electrons and holes that combine to generate an emission from the device when current is applied to the device.
Abstract translation: 公开了一种半导体光子器件及其相关方法。 该器件包括衬底和衬底上的缓冲结构。 缓冲结构由氮化镓铝不连续层和氮化镓铝层上的氮化镓层形成，其厚度使得通过其传播的缺陷的数量功能最小化。 至少两个掺杂的III族氮化物层位于缓冲结构上，其中各层彼此具有相反的导电类型，用于提供电子和空穴，当电流施加到器件时，电子和空穴结合在一起产生来自器件的发射。
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公开(公告)号：US07649209B2
公开(公告)日：2010-01-19
申请号：US11739307
申请日：2007-04-24
Applicant: Christopher P. Hussell , Michael J. Bergmann , Brian T. Collins , David T. Emerson
Inventor： Christopher P. Hussell , Michael J. Bergmann , Brian T. Collins , David T. Emerson
IPC: H01L33/00
CPC classification number: H01L33/502 , C09K11/7731 , C09K11/7734 , C09K11/7774 , G02B6/0023 , G02B6/0068 , G02B6/0073 , H01L33/486 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/01322 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.
Abstract translation: 公开了一种发光二极管。 二极管包括封装支撑件和封装支撑件上的半导体芯片，其中芯片包括在光谱的可见部分中发光的有源区域。 金属触点与封装上的芯片电连通。 基本上透明的密封剂覆盖封装中的芯片。 密封剂中的荧光体发射可见光谱中与芯片发射的频率不同的频率，并响应芯片发出的波长。 还公开了组合发光二极管和平面显示元件的显示元件。 该组合包括基本上平面的显示元件，其中发光二极管位于显示元件的周边上，并且封装支撑件引导二极管的输出基本上平行于显示元件的平面。
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公开(公告)号：US20080191224A1
公开(公告)日：2008-08-14
申请号：US11673317
申请日：2007-02-09
Applicant: David T. Emerson , Michael J. Bergmann , Kevin W. Haberern
Inventor： David T. Emerson , Michael J. Bergmann , Kevin W. Haberern
CPC classification number: H01L33/42 , H01L33/405 , H01L33/50
Abstract: A light emitting diode is disclosed that includes a transparent substrate with an absorption coefficient less than 4 per centimeter, epitaxial layers having absorption coefficients of less than 500 per centimeter in the layers other than the active emission layers, an ohmic contact and metallization layer on at least one of the epitaxial layers, with the ohmic contact and metallization layer having a transmission of at least about 80 percent, and bond pads with reflectivity greater than at least about 70 percent.
Abstract translation: 公开了一种发光二极管，其包括吸收系数小于每厘米4的透明衬底，除了有源发射层之外的层中的吸收系数小于每厘米500的外延层，在其上的欧姆接触和金属化层 至少一个外延层，欧姆接触层和金属化层具有至少约80％的透射率，以及反射率大于至少约70％的接合焊盘。
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Patent Agency Ranking
36.发明申请公开(公告)号：US20080179611A1
公开(公告)日：2008-07-31
申请号：US11899790
申请日：2007-09-07
Applicant: Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , James Seruto , Yankun Fu
Inventor： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , James Seruto , Yankun Fu
IPC: H01L33/00
CPC classification number: H01L33/508 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/44 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
Abstract translation: 制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。 基座沉积在LED上，每个基座与其中一个LED电接触。 在LED上形成涂层，其中涂层埋入至少一些基座。 然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。 然后可以例如通过引线接合露出的基座。 本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。 还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。
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37.发明申请公开(公告)号：US20130322068A1
公开(公告)日：2013-12-05
申请号：US13554776
申请日：2012-07-20
Applicant: JOSEPH G. CLARK , JEFFREY CARL BRITT , AMBER C. ABARE , RAYMOND ROSADO , HARSH SUNDANI , DAVID T. EMERSON , JEREMY SCOTT NEVINS
Inventor： JOSEPH G. CLARK , JEFFREY CARL BRITT , AMBER C. ABARE , RAYMOND ROSADO , HARSH SUNDANI , DAVID T. EMERSON , JEREMY SCOTT NEVINS
CPC classification number: H01L33/58 , F21K9/233 , F21V7/00 , F21V21/00 , F21V29/74 , F21Y2105/10 , F21Y2115/10 , H01L33/48 , H01L33/486 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01S5/02244 , H01L2924/00014
Abstract: Light emitter packages, systems, and methods having improved performance are disclosed. In one aspect, a light emitter package can include a submount that can include an anode and a cathode. A light emitter chip can be disposed over the submount such that the light emitter chip is mounted over at least a portion of the cathode and wirebonded to at least a portion of the anode.
Abstract translation: 公开了具有改进性能的光发射器封装，系统和方法。 在一个方面，光发射器封装可以包括可以包括阳极和阴极的底座。 光发射器芯片可以设置在基座上方，使得发光芯片安装在阴极的至少一部分上并且引线键合到阳极的至少一部分。
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公开(公告)号：US08487337B2
公开(公告)日：2013-07-16
申请号：US13046982
申请日：2011-03-14
Applicant: Christopher P. Hussell , Michael J. Bergmann , Brian T. Collins , David T. Emerson
Inventor： Christopher P. Hussell , Michael J. Bergmann , Brian T. Collins , David T. Emerson
IPC: H01L33/00
CPC classification number: H01L33/502 , C09K11/7731 , C09K11/7734 , C09K11/7774 , G02B6/0023 , G02B6/0068 , G02B6/0073 , H01L33/486 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/01322 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.
Abstract translation: 公开了一种发光二极管。 二极管包括封装支撑件和封装支撑件上的半导体芯片，其中芯片包括在光谱的可见部分中发光的有源区域。 金属触点与封装上的芯片电连通。 基本上透明的密封剂覆盖封装中的芯片。 密封剂中的荧光体发射可见光谱中与芯片发射的频率不同的频率，并响应芯片发出的波长。 还公开了组合发光二极管和平面显示元件的显示元件。 该组合包括基本上平面的显示元件，其中发光二极管位于显示元件的周边上，并且封装支撑件引导二极管的输出基本上平行于显示元件的平面。
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39.发明授权Light emitting diode having undoped and unintentionally doped nitride transition layer 有权具有未掺杂和无意掺杂的氮化物过渡层的发光二极管公开(公告)号：US08409972B2
公开(公告)日：2013-04-02
申请号：US11734218
申请日：2007-04-11
Applicant: Michael J. Bergmann , Daniel C. Driscoll , David T. Emerson
Inventor： Michael J. Bergmann , Daniel C. Driscoll , David T. Emerson
IPC: H01L21/20
CPC classification number: H01L33/0079 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/02513 , H01L21/0254 , H01L33/007
Abstract: A method of forming electronic device precursors and devices with reduced cracking in relevant layers is disclosed along with resulting structures. The method includes the steps of growing a transition layer of undoped Group III nitride on a substrate that is other than a Group III nitride, growing an active structure of Group III nitride on the undoped layer, and removing the substrate from the undoped layer.
Abstract translation: 公开了一种在相关层中形成具有减少的开裂的电子器件前体和器件的方法以及所得到的结构。 该方法包括以下步骤：在不同于III族氮化物的衬底上生长未掺杂的III族氮化物的过渡层，在未掺杂层上生长III族氮化物的活性结构，以及从未掺杂层去除衬底。
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公开(公告)号：US08362512B2
公开(公告)日：2013-01-29
申请号：US12635818
申请日：2009-12-11
Applicant: Christopher P. Hussell , Michael J. Bergmann , Brian T. Collins , David T. Emerson
Inventor： Christopher P. Hussell , Michael J. Bergmann , Brian T. Collins , David T. Emerson
IPC: H01L33/00
CPC classification number: H01L33/502 , C09K11/7731 , C09K11/7734 , C09K11/7774 , G02B6/0023 , G02B6/0068 , G02B6/0073 , H01L33/486 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/01322 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.
Abstract translation: 公开了一种发光二极管。 二极管包括封装支撑件和封装支撑件上的半导体芯片，其中芯片包括在光谱的可见部分中发光的有源区域。 金属触点与封装上的芯片电连通。 基本上透明的密封剂覆盖封装中的芯片。 密封剂中的荧光体发射可见光谱中与芯片发射的频率不同的频率，并响应于芯片发出的波长。 还公开了组合发光二极管和平面显示元件的显示元件。 该组合包括基本上平面的显示元件，其中发光二极管位于显示元件的周边上，并且封装支撑件引导二极管的输出基本上平行于显示元件的平面。
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