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    Interconnects for semiconductor light emitting devices
    35.
    发明授权
    Interconnects for semiconductor light emitting devices 有权
    互连用于半导体发光器件

    公开(公告)号：US07348212B2

    公开(公告)日：2008-03-25

    申请号：US11226151

    申请日：2005-09-13

    Applicant: Stefano Schiaffino ,  Ashim Shatil Haque ,  Paul S. Martin ,  Daniel A. Steigerwald ,  Decai Sun

    Inventor： Stefano Schiaffino ,  Ashim Shatil Haque ,  Paul S. Martin ,  Daniel A. Steigerwald ,  Decai Sun

    IPC: H01L21/00

    CPC classification number: H01L33/62 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/48091 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/3011 ,  H01L2924/00014

    Abstract: A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.

    Abstract translation: 包括设置在n型区域和p型区域之间的发光层和电连接到n型区域和p型区域的触点的半导体发光器件连接到安装件。 任意图案化以覆盖半导体发光器件的面积的至少20％的金属层被镀在形成在安装件上的金属层或形成在其中一个触点上的金属层上。 电镀金属层可以替代其他已知的互连技术，例如柱状凸块。 半导体发光器件通过引起金属层的接触表面之间的相互扩散而物理连接到安装座。 在一些实施例中，在电镀金属层上形成焊料层，然后半导体发光器件通过加热焊料物理连接到安装座。

    Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication
    38.
    发明授权
    Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication 失效
    基于微机电系统的传感器，传感器阵列，感测系统，感测方法和制造方法

    公开(公告)号：US06844214B1

    公开(公告)日：2005-01-18

    申请号：US10604850

    申请日：2003-08-21

    Applicant: Ping Mei ,  Decai Sun ,  Robert A. Street

    Inventor： Ping Mei ,  Decai Sun ,  Robert A. Street

    IPC: B81B3/00 ,  H01L21/00 ,  H01L23/48 ,  H01R11/22

    CPC classification number: B81B3/0021 ,  B81B2201/0292 ,  B81B2201/038 ,  B81B2201/047 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01R12/52

    Abstract: A microelectromechanical system (MEMS) based sensor comprises: a substrate defining a plane; a first conductive material layer having a first stress, a first portion of the first conductive material layer being connected to the substrate and extending in a substantially parallel direction to the plane defined by the substrate and a second portion being disconnected from the substrate and extending in a substantially non-parallel direction to the plane defined by the substrate; and a sensor material layer formed over at least the second portion of the first conductive material layer, the sensor material layer having a second stress that is less than the first stress of the first conductive material layer. The stresses form a stress gradient that bends the second portion of the first conductive material layer and the sensor material layer formed over the second portion of the first conductive material layer away from the substrate.

    Abstract translation: 基于微机电系统（MEMS）的传感器包括：限定平面的基板; 具有第一应力的第一导电材料层，所述第一导电材料层的第一部分连接到所述衬底并且在基本上平行于由所述衬底限定的平面的方向上延伸，并且所述第二部分与所述衬底断开并且延伸到 基本上不平行于由衬底限定的平面的方向; 以及在所述第一导电材料层的至少第二部分上形成的传感器材料层，所述传感器材料层具有小于所述第一导电材料层的第一应力的第二应力。 应力形成应力梯度，该应力梯度使第一导电材料层的第二部分和形成在第一导电材料层的第二部分上方的传感器材料层远离衬底弯曲。

    Microlens switching assembly and method
    40.
    发明授权
    Microlens switching assembly and method 有权
    微透镜开关组件及方法

    公开(公告)号：US06415068B1

    公开(公告)日：2002-07-02

    申请号：US09610673

    申请日：2000-07-07

    Applicant: Decai Sun

    Inventor： Decai Sun

    IPC: G02B635

    CPC classification number: G02B6/3524 ,  G02B6/3526 ,  G02B6/3548 ,  G02B6/3552 ,  G02B6/357 ,  G02B6/3576 ,  G02B6/3598

    Abstract: A microlens switching assembly and a method for optical switching uses a microlens switching assembly. The microlens switching assembly uses a microelectromechanical system-based comb drive, or other drive mechanism, to move a microlens or microlens array in a direction perpendicular to the optical axis to switch a signal between a signal source and a signal receiver. The microlens is carried by a support member that is suspended from a substrate by a pair of folded springs. This allows the microlens to be moved rapidly to provide fast switching. The signal source and the signal receiver may be optical fibers or a laser source and one or more photodetectors. In the case of optical fibers, the switching provided by the microlens switching assembly and method may be an attenuation of the signal that is received by an output optical fiber.

    Abstract translation: 微透镜开关组件和用于光学开关的方法使用微透镜开关组件。 微透镜开关组件使用基于微机电系统的梳状驱动器或其它驱动机构来沿垂直于光轴的方向移动微透镜或微透镜阵列，以在信号源和信号接收器之间切换信号。 微透镜由支撑构件承载，支撑构件通过一对折叠的弹簧从衬底悬挂。 这允许微透镜快速移动以提供快速切换。 信号源和信号接收器可以是光纤或激光源以及一个或多个光电检测器。 在光纤的情况下，由微透镜开关组件和方法提供的开关可以是由输出光纤接收的信号的衰减。

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