Patent search ap:"Goji SHIGA" Page 4

31.

发明授权
Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device 有权
Title translation: 用于倒装芯片型半导体背表面的薄膜，用于半导体背表面的切割带集成薄膜，用于制造半导体器件的工艺和倒装芯片型半导体器件

公开(公告)号：US08492907B2

公开(公告)日：2013-07-23

申请号：US13186000

申请日：2011-07-19

Applicant: Naohide Takamoto , Goji Shiga , Fumiteru Asai

Inventor： Naohide Takamoto , Goji Shiga , Fumiteru Asai

IPC: H01L23/48 , H01L21/50 , B32B3/00

CPC classification number: H01L21/6835 , C09J163/00 , H01L21/561 , H01L23/293 , H01L23/3114 , H01L23/3157 , H01L23/544 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2221/68377 , H01L2221/68381 , H01L2223/54406 , H01L2223/54413 , H01L2223/54433 , H01L2223/54486 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16258 , H01L2224/16268 , H01L2224/2919 , H01L2224/73204 , H01L2224/81002 , H01L2224/81193 , H01L2224/81815 , H01L2224/8191 , H01L2224/831 , H01L2224/83862 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15787 , H01L2924/15788 , Y10T428/24802 , H01L2924/3512 , H01L2924/00 , H01L2924/00014 , H01L2924/01083 , H01L2224/13099

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film having a light transmittance at a wavelength of 532 nm or 1064 nm of 20% or less, and having a contrast between a marking part and a part other than the marking part after laser marking of 20% or more.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在连接到被粘物上的半导体元件倒装芯片的背面上，该膜具有波长为532nm或1064nm的透光率为20 ％以下，并且在激光标记20％以上之后，在标记部和标记部以外的部分之间具有对比度。

32.

发明授权
Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device 有权
Title translation: 用于半导体背面的切割带集成膜，以及用于制造半导体器件的工艺

公开(公告)号：US08455302B2

公开(公告)日：2013-06-04

申请号：US13558540

申请日：2012-07-26

Applicant: Goji Shiga , Naohide Takamoto , Fumiteru Asai

Inventor： Goji Shiga , Naohide Takamoto , Fumiteru Asai

IPC: H01L21/00

CPC classification number: H01L21/6836 , H01L21/561 , H01L23/3114 , H01L23/3164 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L24/92 , H01L2221/68327 , H01L2221/68377 , H01L2221/68386 , H01L2223/54433 , H01L2223/54473 , H01L2224/13099 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/73204 , H01L2224/81815 , H01L2224/8191 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/15787 , H01L2924/15788 , Y10T428/24959 , Y10T428/265 , H01L2924/00014 , H01L2924/01083 , H01L2924/00

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer laminated in this order, and a film for semiconductor back surface provided on the pressure-sensitive adhesive layer of the dicing tape, where the pressure-sensitive adhesive layer has a thickness of from 20 μm to 40 μm.

Abstract translation: 本发明涉及一种半导体背面用切割带一体化膜，其特征在于，具有：依次层叠有基材和粘合剂层的切割带和设置在所述压敏粘合剂上的半导体背面用膜层，其中压敏粘合剂层的厚度为20μm至40μm。

33.

发明授权
Film for flip chip type semiconductor back surface 有权
Title translation: 倒装芯片型半导体背面薄膜

公开(公告)号：US08420509B2

公开(公告)日：2013-04-16

申请号：US12975783

申请日：2010-12-22

Applicant: Naohide Takamoto , Takeshi Matsumura , Goji Shiga

Inventor： Naohide Takamoto , Takeshi Matsumura , Goji Shiga

IPC: H01L21/00

CPC classification number: H01L21/6836 , C09J163/00 , H01L21/561 , H01L23/3114 , H01L23/3164 , H01L23/544 , H01L24/16 , H01L24/27 , H01L24/81 , H01L2221/68327 , H01L2221/68377 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16 , H01L2224/274 , H01L2224/73204 , H01L2224/8101 , H01L2224/81193 , H01L2224/81203 , H01L2224/814 , H01L2224/831 , H01L2924/01004 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01029 , H01L2924/01046 , H01L2924/01079 , H01L2924/15787 , H01L2924/181 , H01L2924/3025 , Y10T428/31511 , H01L2924/3512 , H01L2924/00

Abstract: The present invention provides a film for flip chip type semiconductor back surface, which is to be formed on a back surface of a semiconductor element flip-chip connected on an adherend, the film including a wafer adhesion layer and a laser marking layer, in which the wafer adhesion layer has an elastic modulus (at 50° C.) of 10 MPa or less and the laser marking layer has an elastic modulus (at 50° C.) of 100 MPa or more.

Abstract translation: 本发明提供了一种用于倒装芯片型半导体背表面的薄膜，其将形成在连接在被粘物上的半导体元件倒装芯片的背面上，该薄膜包括晶片粘合层和激光标记层，其中晶片粘合层的弹性模量（50℃）为10MPa以下，激光打标层的弹性模量（50℃）为100MPa以上。

34.

发明申请
DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 失效
Title translation: 用于半导体背面的双面贴合膜及其半导体器件的制造方法

公开(公告)号：US20120028418A1

公开(公告)日：2012-02-02

申请号：US13191697

申请日：2011-07-27

Applicant: Fumiteru ASAI , Goji SHIGA , Naohide TAKAMOTO

Inventor： Fumiteru ASAI , Goji SHIGA , Naohide TAKAMOTO

IPC: H01L21/78 , B32B33/00

CPC classification number: B32B7/06 , B32B7/02 , B32B7/12 , C09J7/20 , C09J201/00 , H01L21/563 , H01L21/68 , H01L21/6836 , H01L24/81 , H01L24/83 , H01L2221/68327 , H01L2221/68377 , H01L2223/54486 , H01L2224/131 , H01L2224/13111 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/8101 , H01L2224/81815 , H01L2224/83007 , H01L2224/83104 , H01L2924/12042 , Y10T428/24942 , Y10T428/26 , H01L2924/00014 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

Abstract translation: 本发明涉及一种半导体背面用切割带一体膜，其特征在于，包括：依次层叠有基材层，第一粘合剂层和第二粘合剂层的切割带，在第一粘合剂层和第二压敏粘合剂层之间的剥离强度Y大于切割带的第二粘合剂层上的剥离强度X的层叠在半导体背面的半导体背面的膜，第二粘合剂层和半导体背面用膜，剥离强度X为0.01〜0.2N / 20mm，剥离强度Y为0.2〜10N / 20mm。

35.

发明申请
FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, PROCESS FOR PRODUCING STRIP FILM FOR SEMICONDUCTOR BACK SURFACE, AND FLIP CHIP TYPE SEMICONDUCTOR DEVICE 审中-公开
Title translation: 片状薄膜半导体背面薄膜，半导体背面薄膜生产工艺及片状薄膜半导体器件

公开(公告)号：US20120028050A1

公开(公告)日：2012-02-02

申请号：US13191574

申请日：2011-07-27

Applicant: Goji SHIGA , Naohide TAKAMOTO , Fumiteru ASAI

Inventor： Goji SHIGA , Naohide TAKAMOTO , Fumiteru ASAI

IPC: B32B27/38 , C08L63/06 , C08L77/06 , C08L67/02 , C08L69/00 , C08L71/10 , C08L63/04 , C08L63/02 , C08L79/08 , C08L61/08 , C08L31/04 , C08L33/08 , C08L33/02 , C08L7/00 , C08L11/00 , C08L9/00 , C08L23/22 , C08L33/14 , C08L35/02 , C08L43/02 , B26D3/00

CPC classification number: C08G59/621 , B32B27/38 , C08K3/36 , C08L63/00 , C09J163/00 , H01L2224/16225 , Y10T83/04 , Y10T428/31511

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface having a ratio of A/B falling within a range of 1 to 8×103 (%/GPa), in which A is an elongation ratio (%) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing and B is a tensile storage modulus (GPa) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在连接到被粘物上的半导体元件倒装芯片的背面上，该倒装芯片型半导体背表面的膜具有A / B比在1〜8×10 3（％/ GPa）的范围内，其中A是在热固化之前的23℃下的倒装芯片型半导体背表面的膜的伸长率（％），B是拉伸储能模量（GPa），用于倒装芯片型半导体背表面，在23℃下热固化。

36.

发明申请
FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND FLIP CHIP TYPE SEMICONDUCTOR DEVICE 有权
Title translation: 用于倒圆片型半导体背表面的薄膜，用于半导体背面的双面复合薄膜，用于制造半导体器件的方法和片状芯片型半导体器件

公开(公告)号：US20120025400A1

公开(公告)日：2012-02-02

申请号：US13191791

申请日：2011-07-27

Applicant: Yusuke KOMOTO , Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI

Inventor： Yusuke KOMOTO , Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI

IPC: H01L23/48 , B32B27/00 , C09J133/12 , C09J11/02 , C09J163/00 , C09J171/10 , H01L21/78 , B32B7/12

CPC classification number: H01L23/3157 , C09J163/00 , H01L21/563 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2221/68336 , H01L2221/68386 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/73204 , H01L2224/81007 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , Y10T428/31504 , H01L2924/00014 , H01L2924/01083 , H01L2224/13099 , H01L2924/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在半导体元件倒装芯片的背面上，该半导体元件倒装芯片连接到被粘物上，其中在热固化之前用于倒装芯片型半导体背表面的膜，其热固化，体积收缩率在23℃至165℃的范围内为100ppm /℃至400ppm /℃。

37.

发明申请
DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE 有权
Title translation: 用于半导体背面的双面胶带

公开(公告)号：US20110156280A1

公开(公告)日：2011-06-30

申请号：US12976112

申请日：2010-12-22

Applicant: Naohide TAKAMOTO , Takeshi MATSUMURA , Goji SHIGA

Inventor： Naohide TAKAMOTO , Takeshi MATSUMURA , Goji SHIGA

IPC: H01L23/48 , H01L21/50 , B32B7/12

CPC classification number: H01L23/562 , H01L21/6836 , H01L21/78 , H01L23/3164 , H01L23/544 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/81 , H01L2221/68377 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16221 , H01L2224/274 , H01L2224/73204 , H01L2224/81007 , H01L2224/81097 , H01L2224/81193 , H01L2224/814 , H01L2224/81815 , H01L2224/831 , H01L2924/01004 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01029 , H01L2924/01046 , H01L2924/01079 , H01L2924/12042 , H01L2924/15787 , H01L2924/15788 , H01L2924/3025 , Y10T428/1476 , Y10T428/28 , H01L2924/01082 , H01L2924/01047 , H01L2924/0103 , H01L2924/01083 , H01L2924/00014 , H01L2924/014 , H01L2924/3512 , H01L2924/00

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which a peel force (temperature: 23° C., peeling angle: 180°, tensile rate: 300 mm/min) between the pressure-sensitive adhesive layer of the dicing tape and the film for flip chip type semiconductor back surface is from 0.05 N/20 mm to 1.5 N/20 mm.

Abstract translation: 本发明提供一种半导体背面用切割带一体膜，其特征在于，包括：基材的切割带和设置在基材上的粘合剂层; 以及设置在压敏粘合剂层上的倒装芯片型半导体背面的膜，其中压敏粘合剂层之间的剥离力（温度：23℃，剥离角度：180°，拉伸速度：300mm / min）切割带的粘合剂层和倒装芯片型半导体背面的膜的厚度为0.05N / 20mm至1.5N / 20mm。

38.

发明申请
FILM FOR BACK SURFACE OF FLIP-CHIP SEMICONDUCTOR 有权
Title translation: 片状半导体背面表面膜

公开(公告)号：US20130099394A1

公开(公告)日：2013-04-25

申请号：US13642325

申请日：2011-04-18

Applicant: Naohide Takamoto , Goji Shiga

Inventor： Naohide Takamoto , Goji Shiga

IPC: H01L23/48 , H01L21/50 , H01L21/78

CPC classification number: H01L23/48 , H01L21/50 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L23/544 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/92 , H01L2221/68327 , H01L2221/68377 , H01L2223/54486 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/81815 , H01L2224/8191 , H01L2224/83862 , H01L2224/92125 , H01L2924/01019 , H01L2924/12042 , H01L2924/00 , H01L2924/3512

Abstract: The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

Abstract translation: 根据本发明的倒装芯片半导体的背面用薄膜是将倒装芯片连接到被粘物上的半导体元件的背面形成的倒装芯片用半导体背面用薄膜，热固化后23℃下的储能弹性模量为10GPa以上且50GPa以下。根据本发明的倒装芯片半导体的背面用膜，由于形成在倒装芯片连接在被粘物上的半导体元件的背面，所以具有保护半导体元件的功能。此外，由于根据本发明的倒装芯片半导体的背面用膜，在10GPa以上的热固化后，在23℃下的拉伸储能弹性模量为：在可以有效地抑制或防止将半导体元件倒装连接到被粘物上。

39.

发明申请
ADHESIVE FILM FOR SEMICONDUCTOR DEVICE, FILM FOR BACKSIDE OF FLIP-CHIP SEMICONDUCTOR, AND DICING TAPE-INTEGRATED FILM FOR BACKSIDE OF SEMICONDUCTOR 审中-公开
Title translation: 用于半导体器件的胶粘膜，用于片状半导体的背面的膜，以及用于半导体背面的带状复合膜

公开(公告)号：US20130017396A1

公开(公告)日：2013-01-17

申请号：US13547820

申请日：2012-07-12

Applicant: Goji SHIGA , Naohide TAKAMOTO , Fumiteru ASAI

Inventor： Goji SHIGA , Naohide TAKAMOTO , Fumiteru ASAI

IPC: C09J163/00 , B32B27/38

CPC classification number: H01L21/6836 , C09J7/29 , C09J163/00 , C09J2203/326 , H01L23/544 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2221/68377 , H01L2223/54433 , H01L2224/13111 , H01L2224/13147 , H01L2224/16238 , H01L2224/16245 , H01L2224/73204 , H01L2224/81007 , H01L2224/81193 , H01L2224/81815 , H01L2224/8191 , H01L2224/83102 , H01L2224/92225 , H01L2924/12042 , Y10T428/31511 , H01L2924/00014 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/0103 , H01L2924/00

Abstract: Provided is an adhesive film for a semiconductor device that is capable of having the same physical properties as these at the time of manufacture even after it is stored for a long time. The adhesive film for a semiconductor device of the present invention contains a thermosetting resin, and in which the amount of reaction heat generated in a temperature range of ±80° C. of a reaction heat peak temperature measured by a differential scanning calorimeter after the adhesive film is stored at 25° C. for 4 weeks is 0.8 to 1 time the amount of reaction heat generated before storage.

Abstract translation: 提供一种用于半导体器件的粘合膜，其即使在长时间存储之后也能够具有与制造时相同的物理性质。本发明的半导体装置用粘合膜含有热固性树脂，其中在粘合剂之后通过差示扫描量热计测量的反应热峰温度在±80℃的温度范围内产生的反应热量薄膜在25℃下储存4周是储存前产生的反应热量的0.8〜1倍。