公开(公告)号：US20200263321A1

公开(公告)日：2020-08-20

申请号：US16868528

申请日：2020-05-06

Applicant: SLT Technologies, Inc

Inventor： Wenkan JIANG ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN

IPC: C30B29/40 ,  H01L29/30 ,  H01L29/20 ,  C30B7/10 ,  C01B21/06

Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3, an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1, and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

公开(公告)号：US20200224331A1

公开(公告)日：2020-07-16

申请号：US16736274

申请日：2020-01-07

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'EVELYN ,  Derrick S. KAMBER

IPC: C30B29/40 ,  C30B25/20 ,  C30B25/16

Abstract: A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.

公开(公告)号：US10174438B2

公开(公告)日：2019-01-08

申请号：US15474806

申请日：2017-03-30

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Rajeev Tirumala Pakalapati ,  Mark P. D'Evelyn

IPC: C30B7/14 ,  C30B7/10 ,  C30B29/40

Abstract: An apparatus for processing material at elevated pressure, the apparatus comprising: (a) two or more radial restraint structures defining an interior region configured to receive a processing chamber, the radial restraint structures being configured to resist an outward radial force from the interior region; (b) upper and lower crown members being disposed axially on either end of the interior region and configured to resist an outward axial force from the interior region; (c) a first axial restraint structure coupling the upper crown member and the lower crown member to provide axial restraint of the upper crown member and the lower crown; and (d) a second axial restraint structure compressing the two or more radial restraint structures to provide an axial restraint of the two or more radial restraint structures.

公开(公告)号：US10100425B2

公开(公告)日：2018-10-16

申请号：US14930170

申请日：2015-11-02

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  James S. Speck

IPC: C30B1/10 ,  C30B7/10 ,  C30B25/02 ,  C30B29/40 ,  C30B7/00 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/34 ,  H01L29/36

Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

公开(公告)号：US20240240352A1

公开(公告)日：2024-07-18

申请号：US18434568

申请日：2024-02-06

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'EVELYN ,  Paul M. VON DOLLEN ,  Lisa M. GAY ,  Douglas W. POCIUS ,  Jonathan D. COOK

IPC: C30B7/10 ,  C30B29/40

CPC classification number: C30B7/105 ,  C30B29/403

Abstract: A method for growth of group Ill metal nitride crystals includes providing one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group Ill metal nitride boule by an ammonothermal crystal growth process.

公开(公告)号：US12040417B2

公开(公告)日：2024-07-16

申请号：US18059293

申请日：2022-11-28

Applicant: SLT Technologies, Inc.

Inventor： Drew W. Cardwell ,  Mark P. D'Evelyn

IPC: H01L31/0232 ,  G02B6/42 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/02327 ,  G02B6/4206 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/03048 ,  H01L31/035236 ,  H01L31/036 ,  H01L31/109 ,  H01L31/1892

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

公开(公告)号：US20240158948A1

公开(公告)日：2024-05-16

申请号：US18388479

申请日：2023-11-09

Applicant: SLT Technologies, Inc. ,  Kyocera Corporation

Inventor： Paul M. VON DOLLEN ,  Koji MIYAMOTO

IPC: C30B7/10

CPC classification number: C30B7/10

Abstract: Embodiments of the disclosure include a temperature control assembly for performing a crystal growth process. The temperature control assembly will include one or more temperature distribution units (TDUs) coupled to an end cap of a capsule. Each of the one or more TDUs comprise: an interior component comprising a major surface; a heating element disposed over the major surface of the interior component; a via tube comprising a central opening that is configured to accommodate lead wires, wherein the lead wires are configured to electrically connect the heating element to a power supply which is disposed on a side of the end cap that is opposite to the side on which the via tube is disposed; and a sheath layer covering the interior component, the heating element, and the via tube, wherein the sheath layer is hermetically sealed to the end cap and is configured to isolate the interior component, the heating element, and the via tube from an external environment in which the one or more TDUs are disposed during processing.

公开(公告)号：US20230340695A1

公开(公告)日：2023-10-26

申请号：US18338280

申请日：2023-06-20

Applicant: SLT Technologies, Inc.

Inventor： Dirk EHRENTRAUT ,  Mark P. D'EVELYN ,  Drew W. CARDWELL

IPC: C30B29/60 ,  C30B29/40 ,  C30B7/10

CPC classification number: C30B29/605 ,  C30B29/403 ,  C30B29/406 ,  C30B7/105

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US20230317444A1

公开(公告)日：2023-10-05

申请号：US18331719

申请日：2023-06-08

Applicant: SLT Technologies, Inc.

Inventor： Wenkan JIANG ,  Mark P. D'EVELYN ,  Derrick S. KAMBER ,  Dirk EHRENTRAUT ,  Jonathan D. COOK ,  James WENGER

IPC: H01L21/02 ,  C30B7/10 ,  C30B33/10 ,  C30B7/00 ,  C30B29/40

CPC classification number: H01L21/02005 ,  H01L21/02647 ,  H01L21/02642 ,  H01L21/0254 ,  C30B7/105 ,  C30B33/10 ,  C30B7/005 ,  C30B29/406 ,  H01L29/7788

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US11453956B2

公开(公告)日：2022-09-27

申请号：US16550947

申请日：2019-08-26

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B33/06 ,  C30B7/10 ,  H01L21/02 ,  H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B19/06 ,  C30B19/12

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.