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    Highly selective doped oxide removal method
    34.
    发明授权
    Highly selective doped oxide removal method 有权
    高选择性掺杂氧化物去除方法

    公开(公告)号：US09406523B2

    公开(公告)日：2016-08-02

    申请号：US14309625

    申请日：2014-06-19

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Zihui Li ,  Nitin K. Ingle ,  Anchuan Wang ,  Shankar Venkataraman

    IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/70

    CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/70

    Abstract: A method of etching doped silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the doped silicon oxide. The plasmas effluents react with the patterned heterogeneous structures to selectively remove doped silicon oxide.

    Abstract translation: 描述了在图案化的异质结构上蚀刻掺杂的氧化硅的方法，并且包括使用部分远程等离子体激发的气相蚀刻。 远程等离子体激发含氟前体，产生的等离子体流出物流入基板处理区域。 含氢前体，例如 水同时流入基板处理区域而没有等离子体激发。 将等离子体流出物与基板处理区域中的未喷射含氢前体结合，其中组合与掺杂的氧化硅反应。 等离子体流出物与图案化的异质结构反应以选择性地去除掺杂的氧化硅。

    ANISOTROPIC GAP ETCH
    35.
    发明申请
    ANISOTROPIC GAP ETCH 有权
    各向异性斑块

    公开(公告)号：US20160181112A1

    公开(公告)日：2016-06-23

    申请号：US14581332

    申请日：2014-12-23

    Applicant: Applied Materials, Inc.

    Inventor： Jun Xue ,  Ching-Mei Hsu ,  Zihui Li ,  Ludovic Godet ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/3065 ,  H01L21/265

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32954 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/32137 ,  H01L21/32155 ,  H01L21/3223

    Abstract: A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.

    Abstract translation: 描述了在图案化衬底上各向异性地干蚀刻暴露的衬底材料的方法。 图案化衬底具有由例如含硅材料或含金属材料制成的单一材料形成的间隙。 该方法包括定向离子注入图案化结构以植入间隙的底部，而基本上不插入间隙的壁。 随后，使用含氟前体形成远程等离子体以蚀刻图案化衬底，使得（1）相对于间隙的底板选择性地蚀刻壁，或者（2）相对于壁选择性地蚀刻地板 的差距。 在没有离子注入的情况下，蚀刻操作将是各向同性的，这是由于在蚀刻过程期间等离子体激发的远程特性。

    DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL
    36.
    发明申请
    DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL 有权
    干燥剂用于选择性去除钨粉

    公开(公告)号：US20150179464A1

    公开(公告)日：2015-06-25

    申请号：US14617779

    申请日：2015-02-09

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Zihui Li ,  Anchuan Wang

    IPC: H01L21/3065 ,  H01L21/02

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/02049 ,  H01L21/32136

    Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

    Abstract translation: 描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。 包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

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