-
公开(公告)号:US12050327B2
公开(公告)日:2024-07-30
申请号:US16537326
申请日:2019-08-09
Applicant: Applied Materials, Inc.
Inventor: Jinxin Fu , Tapashree Roy , Ludovic Godet , Wayne McMillan , Robert J Visser
CPC classification number: G02B3/0068 , G02B3/0012 , G02B27/0172
Abstract: An imaging system and a method of manufacturing a metalens array is provided. The imaging system includes a metalens array, and light scattered from an object is split by the metalens array, such that an image is formed in front of an observer. The metalens array is at least partially transparent to visible light, so that the observer can also see the environment. The method of manufacturing the metalens array includes bonding together a plurality of substrates, and dicing the plurality of substrates into metalens arrays. The metalens arrays can be used in the imaging system.
-
公开(公告)号:US12013566B2
公开(公告)日:2024-06-18
申请号:US17958504
申请日:2022-10-03
Applicant: Applied Materials, Inc.
Inventor: Levent Colak , Ludovic Godet , Andre P. Labonte
IPC: F21V8/00
CPC classification number: G02B6/0065 , G02B6/0016 , G02B6/0038
Abstract: Embodiments described herein provide for methods of forming optical device structures. The methods utilize rotation of a substrate, to have the optical device structures formed thereon, and tunability of etch rates of a patterned resist disposed over the substrate and one of a device layer or the substrate to form the optical device structures without multiple lithographic patterning steps and angled etch steps.
-
公开(公告)号:US11884076B2
公开(公告)日:2024-01-30
申请号:US17647791
申请日:2022-01-12
Applicant: Applied Materials, Inc.
Inventor: Daihua Zhang , Kazuya Daito , Kang Luo , Elsa Massonneau , Alexey Stepanov , Ludovic Godet
CPC classification number: B41J2/16552 , B41J2/18 , B41J2002/16594
Abstract: Embodiments described herein provide for a fluid management system and a method of utilizing the fluid management system. The fluid management system includes a servicing fluid management system and an ink management system. The servicing fluid management system and the ink management system run in parallel within an inkjet chamber. The ink management system supports the flow of inkjet materials between a waste tank, one or more inkjet material supply tanks, an ink management module, and the inkjet printer. The servicing fluid management system supports the flow of servicing fluids between the waste tank, one or more servicing fluid supply tanks, a servicing fluid management module, and the inkjet printer.
-
公开(公告)号:US11807008B2
公开(公告)日:2023-11-07
申请号:US17647780
申请日:2022-01-12
Applicant: Applied Materials, Inc.
Inventor: Daihua Zhang , Kang Luo , Kazuya Daito , Kenneth S. Ledford , Elsa Massonneau , Alexey Stepanov , Ludovic Godet , Mahendran Chidambaram , Visweswaren Sivaramakrishnan , Bahubali S. Upadhye , Hemantha Raju
IPC: B41J2/165
CPC classification number: B41J2/1652 , B41J2/16547
Abstract: Embodiments described herein relate to an inkjet service station and methods of servicing an inkjet printer with the inkjet service station. The inkjet service station is disposed in an inkjet printer of an inkjet chamber. The inkjet service station is operable to perform servicing operations on a processing apparatus of the inkjet printer. The servicing operations include at least one of printhead spitting, printhead purging, printhead flushing, printhead cleaning, printhead drying, or vacuum suction.
-
公开(公告)号:US11778926B2
公开(公告)日:2023-10-03
申请号:US17883508
申请日:2022-08-08
Applicant: Applied Materials, Inc.
Inventor: Mingwei Zhu , Zihao Yang , Nag B. Patibandla , Ludovic Godet , Yong Cao , Daniel Lee Diehl , Zhebo Chen
CPC classification number: H10N60/0941 , C23C14/3464 , C23C14/54 , H10N60/124 , H10N60/855 , G01J1/44 , G01J2001/442
Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.
-
公开(公告)号:US11764099B2
公开(公告)日:2023-09-19
申请号:US17706319
申请日:2022-03-28
Applicant: Applied Materials, Inc.
Inventor: Ludovic Godet , Rutger Meyer Timmerman Thijssen
IPC: H01L21/00 , H01L21/683 , B25B11/00 , H01L21/687 , F21V8/00
CPC classification number: H01L21/6838 , B25B11/005 , H01L21/6831 , H01L21/6833 , H01L21/6875 , H01L21/68735 , G02B6/0065
Abstract: Embodiments described herein relate to a substrate chucking apparatus having a plurality of cavities formed therein. The cavities are formed in a body of the chucking apparatus and a plurality of support elements extend from the body and separate each of the plurality of cavities. In one embodiment, a first plurality of ports are formed in a top surface of the body and extend to a bottom surface of the body through one or more of the plurality of support elements. In another embodiment, a second plurality of ports are formed in a bottom surface of the plurality of cavities and extend through the body to a bottom surface of the body. In yet another embodiment, a first electrode assembly is disposed adjacent the top surface of the body within each of the plurality of support elements and a second electrode assembly is disposed within the body adjacent each of the plurality of cavities.
-
公开(公告)号:US11754919B2
公开(公告)日:2023-09-12
申请号:US17534128
申请日:2021-11-23
Applicant: Applied Materials, Inc.
Inventor: Yongan Xu , Jinxin Fu , Jhenghan Yang , Ludovic Godet
IPC: G03F7/00 , H01L21/3065 , G02B6/122 , G02B6/136
CPC classification number: G03F7/0007 , G02B6/122 , G02B6/136
Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.
-
公开(公告)号:US11725274B2
公开(公告)日:2023-08-15
申请号:US16433064
申请日:2019-06-06
Applicant: Applied Materials, Inc.
Inventor: Tobin Kaufman-Osborn , Srinivas D. Nemani , Ludovic Godet , Qiwei Liang , Adib Khan
IPC: C23C16/02 , C23C16/04 , H01L21/67 , H01L21/687 , C23C16/455 , C23C16/54 , C23C16/56 , H01L21/02 , H01J37/32 , H01L21/677 , H01L21/8234
CPC classification number: C23C16/042 , C23C16/02 , C23C16/45502 , C23C16/45544 , C23C16/45561 , C23C16/45582 , C23C16/54 , C23C16/56 , H01J37/32357 , H01J37/32724 , H01J37/32733 , H01J37/32899 , H01L21/0228 , H01L21/02263 , H01L21/02299 , H01L21/02304 , H01L21/6719 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67167 , H01L21/67196 , H01L21/67207 , H01L21/67742 , H01L21/67748 , H01L21/67754 , H01L21/68785 , H01J2237/327 , H01J2237/334 , H01L21/823431
Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.
-
公开(公告)号:US11681083B2
公开(公告)日:2023-06-20
申请号:US16880846
申请日:2020-05-21
Applicant: Applied Materials, Inc.
Inventor: Sage Toko Garrett Doshay , Rutger Meyer Timmerman Thijssen , Ludovic Godet , Chien-An Chen , Pinkesh Rohit Shah
CPC classification number: G02B5/20 , G02B2207/101
Abstract: Embodiments of the present disclosure relate to methods for fabricating optical devices. One embodiment of the method includes disposing a structure material layer on a surface of a substrate and disposing a patterned photoresist over the structure material layer. The patterned photoresist has at least one device portion and at least one auxiliary portion. Each device portion and each auxiliary portion exposes unmasked portions of the structure material layer. The unmasked portions of structure material layer corresponding to each device portion and each auxiliary portion are etched. The etching the unmasked portions forms at least one optical device having device structures corresponding to the unmasked portions of at least one device portion and at least one auxiliary region having auxiliary structures corresponding to the unmasked portions of at least one auxiliary portion.
-
公开(公告)号:US11640898B2
公开(公告)日:2023-05-02
申请号:US16717400
申请日:2019-12-17
Applicant: Applied Materials, Inc.
Inventor: Ludovic Godet , Joseph C. Olson , Rutger Meyer Timmerman Thijssen
IPC: H01J37/305 , H01J37/304 , H01J37/32 , G02B6/13 , H01L21/3065 , G02B5/18 , H01J37/05 , G02B6/12 , G02B6/124 , G06T19/00 , H01J37/073 , H01J37/147
Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.
-
-
-
-
-
-
-
-
-