公开(公告)号：US20090124066A1

公开(公告)日：2009-05-14

申请号：US12269344

申请日：2008-11-12

申请人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

发明人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC分类号： H01L21/20

CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

公开(公告)号：US20090095894A1

公开(公告)日：2009-04-16

申请号：US11872576

申请日：2007-10-15

申请人： Bon Woong Koo ,  Frank Sinclair

发明人： Bon Woong Koo ,  Frank Sinclair

IPC分类号： H05H3/02

CPC分类号： H01J37/026 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/04 ,  H01J2237/05

摘要： Techniques for commensurate cusp-field for effective ion beam neutralization are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle injection system comprising a beamguide configured to transport an ion beam through a dipole field. The charged particle injection system may also comprise a first array of magnets and a second array of magnets configured to generate a multi-cusp magnetic field, positioned along at least a portion of an ion beam path, the first array of magnets being on a first side of the ion beam path and the second array of magnets being on a second side of the ion beam path. The charged particle injection system may further comprise a charged particle source having one or more apertures configured to inject charged particles into the ion beam path. The charged particle injection system may furthermore align the one or more apertures with at least one of the first array of magnets and the second array of magnets to align the injected charged particles from the charged particle source with one or more magnetic regions for an effective charged particle diffusion into the ion beam path.

摘要翻译： 公开了用于有效离子束中和的相应尖点的技术。 在一个特定的示例性实施例中，技术可以被实现为带电粒子注入系统，其包括配置成将离子束传送通过偶极子场的波导。 带电粒子注入系统还可以包括第一磁体阵列和配置成产生沿离子束路径的至少一部分定位的多尖点磁场的第二磁体阵列，第一磁体阵列位于第一 离子束路径的一侧和第二磁体阵列位于离子束路径的第二侧上。 带电粒子注入系统还可以包括具有一个或多个孔的带电粒子源，其被配置为将带电粒子注入到离子束路径中。 带电粒子注入系统还可以将一个或多个孔与第一磁体阵列和第二磁体阵列中的至少一个对准，以将来自带电粒子源的注入的带电粒子与一个或多个磁性区域对准，用于有效带电 粒子扩散入离子束路径。

公开(公告)号：US20090078883A1

公开(公告)日：2009-03-26

申请号：US11859219

申请日：2007-09-21

申请人： Alexander S. Perel ,  Wilhelm Platow ,  Craig Chaney ,  Frank Sinclair ,  Tyler Rockwell

发明人： Alexander S. Perel ,  Wilhelm Platow ,  Craig Chaney ,  Frank Sinclair ,  Tyler Rockwell

IPC分类号： G21K1/00

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/2445 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/2482 ,  H01J2237/30472

摘要： Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.

摘要翻译： 公开了提供光学离子束计量的技术。 在一个特定的示例性实施例中，技术可以被实现为用于控制光束密度分布的装置，该装置可以包括一个或多个相机系统以捕获离子束的至少一个图像和耦合到一个或多个相机的控制系统 用于控制离子束的束密度分布的系统。 控制系统还可以包括剂量分析器，以在反馈环路和前馈环路中的至少一个中向一个或多个离子注入组件提供信息，以改善剂量和角度均匀性。

公开(公告)号：US5760409A

公开(公告)日：1998-06-02

申请号：US785013

申请日：1997-01-17

申请人： Hank Chen ,  Frank Sinclair ,  Michiro Sugitani

发明人： Hank Chen ,  Frank Sinclair ,  Michiro Sugitani

IPC分类号： C23C14/48 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J2237/304 ,  H01J2237/31703

摘要： Electrical charge neutralization effects are known to be factors that affect the dose or concentrations of beam treatment by high current implanters. Raising beam energies to 1 MeV and beyond requires an understanding of the effects of both charge stripping and charge neutralization as well as a numerically efficient model compensating for these effects. Charge stripping generates ions of a higher charge state and may cause the measured electronic current from a Faraday cup to overestimate the true particle current. An analysis is based on the concept of an effective charge state for an ion beam and results in a more general interpretation that covers both the charge stripping effect as well as ion neutralization. Dose control using the techniques requires two adjustable parameters: an apparent cross section of interaction between the beam and particles in the beam path and the ratio of the final steady charge state to the initial charge state.

摘要翻译： 已知电荷中和作用是影响高电流注入机的束处理剂量或浓度的因素。 将光束能量提高到1 MeV及以上需要了解电荷剥离和电荷中和的影响以及补偿这些影响的数字效率模型。 电荷剥离产生较高电荷状态的离子，并可能导致来自法拉第杯的测量电子电流过高估计真实的粒子电流。 分析基于离子束的有效电荷状态的概念，并且导致涵盖电荷剥离效应以及离子中和的更一般的解释。 使用这些技术的剂量控制需要两个可调参数：光束和光束路径中的粒子之间的相互作用的明显横截面以及最终稳定电荷状态与初始充电状态的比值。

公开(公告)号：US5608223A

公开(公告)日：1997-03-04

申请号：US458354

申请日：1995-06-02

申请人： Suguru Hirokawa ,  Frank Sinclair

发明人： Suguru Hirokawa ,  Frank Sinclair

IPC分类号： C23C14/48 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265 ,  H01L21/687 ,  G21K5/10

CPC分类号： H01L21/68728 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/68764 ,  H01L21/68771 ,  H01J2237/202 ,  H01J2237/31703

摘要： An ion implantation device is equipped with a high-speed driving device which causes rotation of a disk that supports semiconductor wafers around its outer periphery. A center position of the disk is the axis of the high-speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device calculates the movement speed of the low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position and controls the low speed scan speed so that ions are uniformly implanted into the wafers.

摘要翻译： 离子注入装置配备有高速驱动装置，其使围绕其外周支撑半导体晶片的盘的旋转。 盘的中心位置是高速旋转的轴。 低速驱动装置导致盘在径向上的相对运动。 离子注入装置参考围绕外周的晶片间的不同间隔和从盘的中心到离子注入位置的距离来计算低速驱动装置的移动速度，并且控制低速扫描速度，使得离子 均匀地植入晶片。

公开(公告)号：US09112064B2

公开(公告)日：2015-08-18

申请号：US12948248

申请日：2010-11-17

申请人： Peter L. Kellerman ,  Frank Sinclair

发明人： Peter L. Kellerman ,  Frank Sinclair

IPC分类号： C30B15/30 ,  H01L31/02 ,  C30B15/06 ,  C30B15/14 ,  C30B28/10 ,  C30B29/06

CPC分类号： H01L31/02 ,  C30B15/06 ,  C30B15/14 ,  C30B15/30 ,  C30B28/10 ,  C30B29/06

摘要： This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.

摘要翻译： 该片材生产设备包括限定被配置为保持熔体的通道的容器。 熔体构造成从通道的第一点流到第二点。 冷却板靠近熔体设置并且被配置成在熔体上形成片材。 溢流道设置在通道的第二点。 该溢流道构造成将片材与熔体分离。

公开(公告)号：US08659229B2

公开(公告)日：2014-02-25

申请号：US13108052

申请日：2011-05-16

申请人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

发明人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

IPC分类号： H05H1/24

CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32669

摘要： A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

摘要翻译： 公开了一种等离子体处理装置和方法，其在外壳内产生均匀的等离子体。 在一个实施例中，导电或铁氧体材料用于影响天线的一部分，其中一部分由多个线圈段的部分组成。 在另一个实施例中，铁氧体材料用于影响天线的一部分。 在另一个实施例中，通过改变外壳的内部形状和体积来提高等离子体的均匀性。

公开(公告)号：US08590485B2

公开(公告)日：2013-11-26

申请号：US12767125

申请日：2010-04-26

申请人： Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

发明人： Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC分类号： H01J37/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H05H1/30

摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.

摘要翻译： 公开了一种能够利用电感耦合等离子体生产产生高密度宽带状离子束的离子源。 与常规ICP源相反，本公开描述了不是圆柱形的ICP源。 相反，源被限定为使得其宽度（其是提取梁的尺寸）大于其高度。 可以定义源的深度以最大化从天线到等离子体的能量传递。 在另一个实施例中，围绕ICP源的多谐振磁场用于进一步增加电流密度并提高所提取的离子束的均匀性。 离子束均匀性也可以通过几个独立的控制来控制，包括气体流速和输入射频功率。

公开(公告)号：US08545624B2

公开(公告)日：2013-10-01

申请号：US12487058

申请日：2009-06-18

申请人： Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson

发明人： Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson

IPC分类号： C30B13/28

CPC分类号： B22D39/02 ,  C30B11/001 ,  C30B11/003 ,  C30B29/02 ,  C30B29/06 ,  C30B29/08 ,  C30B29/403 ,  C30B29/60

摘要： An apparatus to pump a melt is disclosed. The pump has a chamber that defines a cavity configured to hold the melt. A gas source is in fluid communication with the chamber. A first valve is between the chamber and a first pipe and a second valve is between the chamber and a second pipe. The valves may be check valves in one embodiment.

摘要翻译： 公开了一种用于泵送熔体的装置。 泵具有限定被配置为保持熔体的腔的腔室。 气体源与腔室流体连通。 第一阀在腔室和第一管之间，第二阀在腔室和第二管之间。 在一个实施例中，阀可以是止回阀。

公开(公告)号：US08129695B2

公开(公告)日：2012-03-06

申请号：US12647950

申请日：2009-12-28

申请人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

发明人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

IPC分类号： G21K1/06

CPC分类号： H01J37/3171 ,  H01J37/1477 ,  H01J2237/053 ,  H01J2237/12 ,  H01J2237/24514

摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.

摘要翻译： 公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。 该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。 使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。 虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。 在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。 在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。 在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。