Crystal firm, crystal substrate, and semiconductor device
    32.
    发明申请
    Crystal firm, crystal substrate, and semiconductor device 失效
    水晶公司,晶体基板和半导体器件

    公开(公告)号:US20070125996A1

    公开(公告)日:2007-06-07

    申请号:US11699999

    申请日:2007-01-31

    摘要: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

    摘要翻译: 使用具有位错的晶体基底来获得位错密度低的晶体膜,晶体基板和半导体器件。 生长衬底(11)的一侧设置有在其间具有缓冲层(12)的晶体层(13)。 晶体层(13)在从下方延伸的每个穿透位错D 1 1的末端具有间隔(13a),(13b)。 穿透位错D 1< 1>通过空间(13a),(13b)从上层分离,使得每个穿透位错D 1 1被阻止传播到 上层。 当由汉堡矢量表示的穿透位错D 1 1的位移被保留以产生另一位错时,空间(13a),(13b)改变其位移的方向。 结果,空间(13a),(13b)上方的上层以低位错密度变为结晶。

    Method of fabricating semiconductor device and semiconductor device
    40.
    发明授权
    Method of fabricating semiconductor device and semiconductor device 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号:US06927164B2

    公开(公告)日:2005-08-09

    申请号:US10211419

    申请日:2002-08-02

    摘要: A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device. Since the first conductive layer has good crystallinity and is suitable for formation of an electrode thereon, an electrode can be efficiently formed on the back surface of the first conductive type layer of the peeled stacked structure.

    摘要翻译: 通过从形成在下部生长层的开口部分选择性地生长,形成具有比形成在基板上的下部生长层的带隙能量小的带隙能量的第一导电型层,并且层叠有源层和第二导电类型层 在第一导电类型层上形成堆叠结构。 当这种用于形成半导体器件的层叠结构被照射具有在生长下层和第一导电类型层的带隙能之间的能量值的激光束时,在下部生长的第一导电型层侧界面处发生磨损 层和第一导电型层,使得层叠结构从基板和下层生长层剥离,并且同时与用于形成另一半导体器件的另一堆叠结构隔离。 由于第一导电层具有良好的结晶度并且适于在其上形成电极,因此可以在剥离的堆叠结构的第一导电类型层的背面上有效地形成电极。