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公开(公告)号:US11254563B2
公开(公告)日:2022-02-22
申请号:US15962912
申请日:2018-04-25
Applicant: Intel Corporation
Inventor: Omkar G. Karhade , Nitin A. Deshpande
Abstract: Embodiments include a microelectronic device package structure having a die on a substrate, where a first side of the die is electrically coupled to the substrate, and a second side of the die is covered with a first material having a first thermal conductivity. A second material is adjacent to a sidewall of the die and adjacent to a sidewall of the first material. The second material has second thermal conductivity, smaller than the first thermal conductivity. The second material may have mechanical and/or underfill properties superior to those of the first material. Together, the two materials may provide a package structure having enhanced thermal and mechanical performance.
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公开(公告)号:US20210391263A1
公开(公告)日:2021-12-16
申请号:US16902958
申请日:2020-06-16
Applicant: Intel Corporation
Inventor: Bai Nie , Gang Duan , Omkar G. Karhade , Nitin A. Deshpande , Yikang Deng , Wei-Lun Jen , Tarek A. Ibrahim , Sri Ranga Sai Boyapati , Robert Alan May , Yosuke Kanaoka , Robin Shea McRee , Rahul N. Manepalli
IPC: H01L23/538 , H01L21/48
Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.
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公开(公告)号:US20210066265A1
公开(公告)日:2021-03-04
申请号:US16553544
申请日:2019-08-28
Applicant: Intel Corporation
Inventor: Feras Eid , Aleksandar Aleksov , Telesphor Kamgaing , Georgios Dogiamis , Johanna M. Swan , Sivakumar Nagarajan , Nitin A. Deshpande , Omkar G. Karhade , William James Lambert
Abstract: Disclosed herein are tunable capacitor arrangements in integrated circuit (IC) package substrates, as well as related methods and devices. For example, in some embodiments, an IC package substrate may include a first embedded capacitor, a second embedded capacitor, and a fuse electrically coupled between the first embedded capacitor and the second embedded capacitor such that when the fuse is in a closed state, the first embedded capacitor and the second embedded capacitor are connected in parallel, and when the fuse is in an open state, the first embedded capacitor and the second embedded capacitor are not connected in parallel.
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公开(公告)号:US20190157205A1
公开(公告)日:2019-05-23
申请号:US16254126
申请日:2019-01-22
Applicant: INTEL CORPORATION
Inventor: Nitin A. Deshpande , Omkar G. Karhade
IPC: H01L23/538 , H01L23/13 , H01L23/522 , H01L21/48 , H01L23/00 , H01L25/065 , H01L25/00
CPC classification number: H01L23/5383 , H01L21/486 , H01L23/13 , H01L23/522 , H01L23/5381 , H01L23/5384 , H01L23/5385 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/14 , H01L2224/16145 , H01L2224/16227 , H01L2224/16238 , H01L2224/1703 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/15153 , H01L2924/15192
Abstract: A microelectronic structure includes a substrate having a first surface and a cavity extending into the substrate from the substrate first surface, a first microelectronic device and a second microelectronic device attached to the substrate first surface, and a bridge disposed within the substrate cavity and attached to the first microelectronic device and to the second microelectronic device. The bridge includes a plurality conductive vias extending from a first surface to an opposing second surface of the bridge, wherein the conductive vias are electrically coupled to deliver electrical signals from the substrate to the first microelectronic device and the second microelectronic device. The bridge further creates at least one electrical signal connection between the first microelectronic device and the second microelectronic device.
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公开(公告)号:US10229882B2
公开(公告)日:2019-03-12
申请号:US15668179
申请日:2017-08-03
Applicant: INTEL CORPORATION
Inventor: Nitin A. Deshpande , Omkar G. Karhade
IPC: H01L23/538 , H01L23/13 , H01L23/522 , H01L21/48 , H01L23/00 , H01L25/065 , H01L25/00
Abstract: A microelectronic structure includes a substrate having a first surface and a cavity extending into the substrate from the substrate first surface, a first microelectronic device and a second microelectronic device attached to the substrate first surface, and a bridge disposed within the substrate cavity and attached to the first microelectronic device and to the second microelectronic device. The bridge includes a plurality conductive vias extending from a first surface to an opposing second surface of the bridge, wherein the conductive vias are electrically coupled to deliver electrical signals from the substrate to the first microelectronic device and the second microelectronic device. The bridge further creates at least one electrical signal connection between the first microelectronic device and the second microelectronic device.
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公开(公告)号:US20180182718A1
公开(公告)日:2018-06-28
申请号:US15392145
申请日:2016-12-28
Applicant: Intel Corporation
Inventor: Omkar G. Karhade , Kedar Dhane , Yongki Min , William J. Lambert
CPC classification number: H01L23/562 , H01L21/4853 , H01L23/3142 , H01L23/49811 , H01L25/0655 , H01L2224/16225 , H05K1/0271 , H05K1/181
Abstract: Methods of forming microelectronic package structures, and structures formed thereby, are described. Those methods/structures may include attaching a stiffener on a substrate, wherein a first section of the stiffener and a second section of the stiffener are on opposite sides of an opening. At least one component may be attached on the substrate within the opening, wherein the at least one component is disposed between the first section of the stiffener and the second section of the stiffener, and wherein the stiffener comprises a grounding structure disposed on the substrate.
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公开(公告)号:US09275955B2
公开(公告)日:2016-03-01
申请号:US14132774
申请日:2013-12-18
Applicant: INTEL CORPORATION
Inventor: Ravindranath V. Mahajan , Christopher J. Nelson , Omkar G. Karhade , Feras Eid , Nitin A. Deshpande , Shawna M. Liff
IPC: H01L23/28 , H01L23/538 , H01L25/00 , H01L25/16 , H01L23/00 , H01L23/367 , H01L23/14 , H01L23/31 , H01L23/433 , H01L23/498 , H01L21/56
CPC classification number: H01L23/5381 , H01L21/563 , H01L21/568 , H01L23/145 , H01L23/3114 , H01L23/3128 , H01L23/367 , H01L23/3675 , H01L23/4334 , H01L23/49816 , H01L23/49827 , H01L23/5389 , H01L24/16 , H01L24/17 , H01L24/19 , H01L24/24 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0657 , H01L25/165 , H01L25/50 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16265 , H01L2224/17181 , H01L2224/24145 , H01L2224/24245 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/2912 , H01L2224/29139 , H01L2224/29144 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/73209 , H01L2224/73253 , H01L2224/73259 , H01L2224/73267 , H01L2224/81005 , H01L2224/92124 , H01L2224/92224 , H01L2224/92242 , H01L2224/92244 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/12042 , H01L2924/1432 , H01L2924/1433 , H01L2924/1434 , H01L2924/15192 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/014 , H01L2924/00 , H01L2924/0665
Abstract: Embodiments of the present disclosure are directed towards an integrated circuit (IC) package having first and second dies with first and second input/output (I/O) interconnect structures, respectively. The IC package may include a bridge having first and second electrical routing features coupled to a portion of the first and second I/O interconnect structures, respectively. In embodiments, the first and second electrical routing features may be disposed on one side of the bridge; and third electrical routing features may be disposed on an opposite side. The first and second electrical routing features may be configured to route electrical signals between the first die and the second die and the third electrical routing features may be configured to route electrical signals between the one side and the opposite side. The first die, the second die, and the bridge may be embedded in electrically insulating material. Other embodiments may be described and/or claimed.
Abstract translation: 本公开的实施例涉及具有分别具有第一和第二输入/输出(I / O)互连结构的第一和第二裸片的集成电路(IC)封装。 IC封装可以包括具有分别耦合到第一和第二I / O互连结构的一部分的第一和第二电路由特征的桥。 在实施例中,第一和第二电路由特征可以设置在桥的一侧; 并且第三电路布线特征可以设置在相对侧上。 第一和第二电路由特征可以被配置为在第一管芯和第二管芯之间路由电信号,并且第三电路由特征可以被配置为在一侧和相对侧之间路由电信号。 第一管芯,第二管芯和桥可以嵌入电绝缘材料中。 可以描述和/或要求保护其他实施例。
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公开(公告)号:US20150163904A1
公开(公告)日:2015-06-11
申请号:US14102757
申请日:2013-12-11
Applicant: Intel Corporation
Inventor: Omkar G. Karhade , John S. Guzek , Johanna M. Swan , Christopher J. Nelson , Nitin A. Deshpande , William J. Lambert , Charles A. Gealer , Feras Eid , Islam A. Salama , Kemal Aygun , Sasha N. Oster , Tyler N. Osborn
CPC classification number: H01L25/16 , H01L23/5383 , H01L23/5386 , H01L23/5387 , H01L24/50 , H01L24/86 , H01L25/00 , H01L25/0655 , H01L2224/0405 , H01L2224/04105 , H01L2224/05568 , H01L2224/056 , H01L2224/05647 , H01L2224/29078 , H01L2224/86203 , H01L2224/86815 , H05K1/185 , Y10T29/49155 , H01L2924/00014 , H01L2924/014
Abstract: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.
Abstract translation: 本说明书的微电子封装可以包括具有与其电连接的至少一行连接结构的第一微电子器件和具有与其电连接的至少一排连接结构的第二微电子器件,其中所述至少一个 第一微电子器件行与X方向上的至少一个第二微电子器件行内的对应连接结构对准。 包括具有在互连衬底的第一表面上沿x方向延伸的多个电隔离导电迹线的互连衬底的互连可以附接到所述至少一个第一微电子器件连接结构行和所述至少一个第二微电子器件 连接结构行,使得至少一个互连导电迹线形成第一微电子器件连接结构与其对应的第二微电子器件连接结构之间的连接。
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公开(公告)号:US12272650B2
公开(公告)日:2025-04-08
申请号:US16804835
申请日:2020-02-28
Applicant: Intel Corporation
Inventor: Omkar G. Karhade , Debendra Mallik , Nitin A. Deshpande , Amruthavalli Pallavi Alur
IPC: H01L23/538 , H01L23/00 , H01L23/13 , H01L23/498 , H01L23/522
Abstract: Embodiments may relate to a microelectronic package that includes a substrate with a cavity therein. A component may be positioned within the substrate, and exposed by the cavity. A solder bump may be positioned within the cavity and coupled with the component, and a bridge die may be coupled with the solder bump. Other embodiments may be described or claimed.
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公开(公告)号:US20250112168A1
公开(公告)日:2025-04-03
申请号:US18477813
申请日:2023-09-29
Applicant: Intel Corporation
Inventor: Omkar G. Karhade , Nitin A. Deshpande , Gwang-Soo Kim , Harini Kilambi , Han Ju Lee
IPC: H01L23/544 , H01L23/00 , H01L23/522 , H01L23/538 , H01L25/065
Abstract: Alignment markers are created on a carrier wafer prior to attachment of integrated circuit dies to the carrier wafer. The alignment markers can be used in aligning integrated circuit dies to the carrier wafer during attachment of the integrated circuit dies to the carrier wafer. A reconstituted wafer can be created from the integrated circuit dies attached to the carrier wafer and the alignment markers are part of the reconstituted wafer. The alignment markers can further be used to align a wafer bonding layer to the reconstituted wafer. The wafer bonding layer can be used in attaching the reconstituted wafer to an interposer, another wafer, or another microelectronic structure. The alignment markers are located outside an outer lateral boundary of the integrated circuit dies (such as between integrated circuit dies) and are not connected to any metal lines in the integrated circuit dies in the reconstituted wafer.
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