公开(公告)号：US07141499B2

公开(公告)日：2006-11-28

申请号：US10317266

申请日：2002-12-10

Applicant: Ivo Raaijmakers

Inventor： Ivo Raaijmakers

IPC: H01L21/44 ,  H05H1/00 ,  C23C16/04 ,  C30B25/12

CPC classification number: C23C16/45544 ,  C23C16/452 ,  C23C16/45521 ,  C23C16/45536 ,  C23C16/45542 ,  C30B25/14 ,  C30B29/38 ,  H01J37/3244 ,  Y10T117/10

Abstract: An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a specific embodiment, the apparatus of this invention provides sequential repeated pulses of reactants in a flow of carrier gas for reaction at a substrate surface. The reactant pulses are delivered with sufficient intervening delay times to minimize undesirable reaction between reactants in adjacent pulses in the gas phase or undesired uncontrolled reactions on the substrate surface.

公开(公告)号：US07115521B2

公开(公告)日：2006-10-03

申请号：US10993024

申请日：2004-11-18

Applicant: Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

Inventor： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC: H01L21/302 ,  H01L21/461

CPC classification number: C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

公开(公告)号：US06936535B2

公开(公告)日：2005-08-30

申请号：US10007304

申请日：2001-12-05

Applicant: Ki-Bum Kim ,  Pekka J. Soininen ,  Ivo Raaijmakers

Inventor： Ki-Bum Kim ,  Pekka J. Soininen ,  Ivo Raaijmakers

IPC: C23C16/20 ,  C23C16/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L21/44 ,  H01L5/12

CPC classification number: H01L21/76846 ,  H01L21/28562 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al intermediate layer is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully.

Abstract translation: 本发明提供一种制造半导体器件的方法，其可以通过铜互连促进半导体器件的商业化。 在金属互连线制造的过程中，与Al中间层结合的TiN薄膜用作沟槽或通孔壁上的扩散阻挡层。 为了形成，Al沉积在TiN薄膜上，随后铜填充沟槽。 Al扩散到TiN层并与氧或氮反应，这将有效地吸收晶界，从而阻止铜的扩散。

公开(公告)号：US06900877B2

公开(公告)日：2005-05-31

申请号：US10170307

申请日：2002-06-12

Applicant: Ivo Raaijmakers

Inventor： Ivo Raaijmakers

IPC: B25J9/10 ,  B25J13/08 ,  H01L21/68 ,  G03B27/42

CPC classification number: H01L21/681

Abstract: A method and apparatus is provided for determining substrate drift from its nominal or intended position. The apparatus includes at least two fixed reference points. The reference points can be fixed with respect to the processing tool, or with respect to the end effector. As a robotic arm moves the end effector and substrate along a path, a camera captures images of the edge of the substrate and the reference points. Two or more cameras can also be provided. A computer can then calculate positional drift of the substrate, relative to its expected or centered position on the end effector, based upon these readings, and this drift can be corrected in subsequent robotic arm movement.

Abstract translation: 提供了一种用于从其标称位置或预期位置确定衬底漂移的方法和装置。 该装置包括至少两个固定参考点。 参考点可以相对于加工工具固定，或相对于末端执行器固定。 当机器人手臂沿着路径移动末端执行器和基板时，相机捕获基板边缘和参考点的图像。 还可以提供两个或更多的相机。 计算机然后可以基于这些读数来计算衬底相对于末端执行器上的预期或居中位置的位置偏移，并且可以在随后的机器人手臂运动中校正该漂移。

公开(公告)号：US06893507B2

公开(公告)日：2005-05-17

申请号：US10200465

申请日：2002-07-18

Applicant: Matthew G. Goodman ,  Ivo Raaijmakers ,  Loren R. Jacobs ,  Franciscus B. M. van Bilsen ,  Michael J. Meyer ,  Eric Alan Barrett

Inventor： Matthew G. Goodman ,  Ivo Raaijmakers ,  Loren R. Jacobs ,  Franciscus B. M. van Bilsen ,  Michael J. Meyer ,  Eric Alan Barrett

IPC: H01L21/683 ,  C23C16/458 ,  C23C16/48 ,  H01L21/205 ,  H01L21/26 ,  H01L21/687 ,  H01L21/00 ,  C23C16/00

CPC classification number: H01L21/68735 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/481 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68785

Abstract: Improvements in the design of a low mass wafer holder are disclosed. The improvements include the use of peripherally located, integral lips to space a wafer or other substrate above the base plate of the wafer holder. A uniform gap is thus provided between the wafer and the base plate, such as will temper rapid heat exchanges, allow gas to flow between the wafer and wafer holder during wafer pick-up, and keep the wafer holder thermally coupled with the wafer. At the same time, thermal disturbance from lip contact with the wafer is reduced. Gas flow during pick-up can be provided through radial channels in a wafer holder upper surface, or through backside gas passages. A thicker ring is provided at the wafer holder perimeter, and is provided in some embodiments as an independent piece to accommodate stresses accompanying thermal gradients. Self-centering mechanisms are provided to keep the wafer holder centered relative to a spider which is subject to differential thermal expansion.

Abstract translation: 公开了一种低质量晶片支架的设计改进。 这些改进包括使用外围定位的整体式唇缘以将晶片或其它基板放置在晶片保持器的基板之上。 因此，在晶片和基板之间提供均匀的间隙，例如将回火快速热交换，允许气体在晶片拾取期间在晶片和晶片保持器之间流动，并保持晶片保持器与晶片热耦合。 同时，与晶片的唇接触的热扰动减小。 拾取期间的气流可以通过晶片保持器上表面中的径向通道或通过背侧气体通道来提供。 在晶片保持器周边处提供较厚的环，并且在一些实施例中作为独立件提供以适应伴随热梯度的应力。 提供自对中机构以保持晶片保持架相对于经受不同热膨胀的蜘蛛座居中。

公开(公告)号：US20050092249A1

公开(公告)日：2005-05-05

申请号：US10991556

申请日：2004-11-18

Applicant: Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

Inventor： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

IPC: C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/507 ,  C23C16/509 ,  C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

Abstract: Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

Abstract translation: 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 在一个实施方案中，反应器包括反应室。 喷头板将反应室分成上部和下部。 第一前体指向反应室的下半部分，第二前体指向反应室的上半部分。 基板设置在反应室的下半部内。 喷头板包括多个通道，使得上半部分与反应室的下半部连通。 在另一种布置中，反应室的上半部限定了其中形成原位自由基的等离子体腔。 在另一种布置中，反应室包括挡板，其被构造成选择性地打开和关闭喷头板中的通道。 在其他布置中，喷头板被布置成改变流过反应室的气体的局部流动模式。

公开(公告)号：US20050092235A1

公开(公告)日：2005-05-05

申请号：US10993024

申请日：2004-11-18

Applicant: Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

Inventor： Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC: C30B1/00 ,  C30B23/00 ,  C30B25/00 ,  C30B25/02 ,  C30B28/12 ,  C30B28/14 ,  C30B29/52 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36

CPC classification number: C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

Abstract translation: 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US06727169B1

公开(公告)日：2004-04-27

申请号：US09644416

申请日：2000-08-23

Applicant: Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

Inventor： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

IPC: H01L214763

CPC classification number: C23C16/45525 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/45534 ,  C23C16/45536 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.

Abstract translation: 提供了集成电路中双镶嵌结构的保形衬里的方法和结构。 沟槽和接触通孔形成在绝缘层中。 沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。 示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。 自身端接的金属层因此与氮气反应。 接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

公开(公告)号：US06564810B1

公开(公告)日：2003-05-20

申请号：US09536590

申请日：2000-03-28

Applicant: Ivo Raaijmakers ,  Franciscus B. Van Bilsen

Inventor： Ivo Raaijmakers ,  Franciscus B. Van Bilsen

IPC: B08B310

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  B08B9/08 ,  C23C16/4405 ,  Y10S134/902 ,  Y10S438/905

Abstract: A method of removing deposits from selected areas of a substrate-processing chamber comprising applying RF energy to a coil located around selected areas of the chamber is provided. Also provided is a substrate-processing chamber with improved cleaning properties having a coil capable of being coupled with an RF field disposed at selected areas of the chamber.

Abstract translation: 提供了从衬底处理室的选定区域去除沉积物的方法，包括将RF能量施加到位于室的选定区域周围的线圈。 还提供了具有改进的清洁特性的衬底处理室，其具有能够与设置在腔室的选定区域处的RF场耦合的线圈。

公开(公告)号：US06544900B2

公开(公告)日：2003-04-08

申请号：US09992215

申请日：2001-11-14

Applicant: Ivo Raaijmakers ,  Christiaan Werkhoven

Inventor： Ivo Raaijmakers ,  Christiaan Werkhoven

IPC: H01L2131

CPC classification number: H01L21/28185 ,  C23C16/44 ,  H01L21/28017 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/518

Abstract: Multiple sequential processes are conducted in situ in a single-wafer processing chamber, particularly for forming ultrathin dielectric stacks of high quality. The chamber exhibits single-pass, laminar gas flow, facilitating safe and clean sequential processing. Furthermore, a remote plasma source widens process windows, permitting isothermal sequential processing and thereby reducing the transition time for temperature ramping between in situ steps. In exemplary processes, extremely thin interfacial silicon oxide, nitride and/or oxynitride is grown, followed by in situ silicon nitride deposition. Cleaning, anneal and electrode deposition can also be conducted in situ, reducing transition time without commensurate loss in reaction rates.