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    Light Source
    31.
    发明申请
    Light Source 审中-公开

    公开(公告)号：US20190051788A1

    公开(公告)日：2019-02-14

    申请号：US16079020

    申请日：2017-05-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Frank Singer ,  Alexander Linkov ,  Stefan Illek ,  Rainer Butendeich ,  Christoph Koller ,  Thomas Schwarz

    IPC: H01L31/167 ,  H01L25/13 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16

    Abstract: A light source is disclosed. In an embodiment a light source includes at least one first semiconductor emitter for generating first light, at least one second semiconductor emitter for generating second light, the second light having a different color than the first light, a light mixing body configured to produce a mixed light from the first and second lights and a detector on the light mixing body, the detector configured to determine a color locus of the mixed light, wherein the first and second semiconductor emitters are arranged along a line and have different distances from the detector, wherein the light mixing body is arranged on side surfaces of the first and second semiconductor emitters and in projection onto the side surfaces at least partially covers each of the side surfaces, so that the detector receives light from each of the first and second semiconductor emitters through the light mixing body.

    MODULE FOR A VIDEO WALL
    32.
    发明申请
    MODULE FOR A VIDEO WALL 审中-公开

    公开(公告)号：US20180322824A1

    公开(公告)日：2018-11-08

    申请号：US15775574

    申请日：2016-11-11

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alexander Martin ,  Thomas Schwarz ,  Frank Singer ,  Andreas Plössl

    IPC: G09G3/32 ,  G06F3/14

    CPC classification number: G09G3/32 ,  G06F3/1446 ,  G09G2300/026 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2330/02 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2224/92247

    Abstract: A module for a video wall includes a first light emitting chip of an image pixel connecting to a first power line by a first electrical terminal, the first light emitting chip connects to a third power line by a second electrical terminal, a second light emitting chip of the image pixel connects to a second power line by the first electrical terminal, the second light emitting chip of the image pixel connects to a fourth power line by the second electrical terminal, the first and/or the second power line are/is a surface metallization, including contact sections, a light emitting chip is arranged on a contact section, at least between contact sections of a first and of a second power line an insulation layer is provided on a carrier, the insulation layer includes openings above the contact sections, and the light emitting chips are arranged in the openings.

    Method for producing optoelectronic semiconductor components and optoelectronic semiconductor component
    33.
    发明授权
    Method for producing optoelectronic semiconductor components and optoelectronic semiconductor component 有权

    公开(公告)号：US10008639B2

    公开(公告)日：2018-06-26

    申请号：US15120457

    申请日：2015-02-20

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Britta Göötz ,  Frank Singer ,  Lutz Höppel ,  Jürgen Moosburger

    IPC: H01L33/48 ,  H01L33/00 ,  H01L33/52 ,  H01L33/50 ,  H01L33/62

    CPC classification number: H01L33/486 ,  H01L33/005 ,  H01L33/505 ,  H01L33/52 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0066

    Abstract: A method for producing optoelectronic semiconductor components (100) is specified, wherein a carrier (1) having a carrier main side (11) is provided. Furthermore, a plurality of singulated optoelectronic semiconductor chips (2) are provided, wherein the semiconductor chips (2) each have a main emission side (21) and a contact side (22) opposite the main emission side (21). The singulated semiconductor chips (2) are then applied to the carrier main side (11), such that the contact side (22) in each case faces the carrier main side (11). In regions between the semiconductor chips, a mask frame (3) is applied, wherein the mask frame (3) is a grid of partitions (31). In a plan view of the carrier main side (11), each semiconductor chip (2) is surrounded all around by the partitions (31). The semiconductor chips (2) are potted with a conversion material (4) such that a conversion element (41) is respectively formed on the semiconductor chips (2). In this case, the conversion element (41) at least partly covers the main emission side (21) of the respective semiconductor chip (2). The carrier (1) is then removed. In a further step, the optoelectronic semiconductor components (100) are detached from the mask frame (3), the mask frame (3) being destroyed.

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