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    Protective self-aligned buffer layers for damascene interconnects
    31.
    发明授权
    Protective self-aligned buffer layers for damascene interconnects 有权
    用于大马士革互连的保护性自对准缓冲层

    公开(公告)号：US08317923B1

    公开(公告)日：2012-11-27

    申请号：US12762223

    申请日：2010-04-16

    申请人： Kaushik Chattopadhyay ,  Bart van Schravendijk ,  Yongsik Yu ,  Mandyam Sriram

    发明人： Kaushik Chattopadhyay ,  Bart van Schravendijk ,  Yongsik Yu ,  Mandyam Sriram

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

    摘要翻译： 保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面选择性地形成的材料层。 在镶嵌互连中，PSAB层通常驻留在金属层和电介质扩散阻挡层之间的界面处。 PSAB层促进了金属层和相邻电介质扩散阻挡层之间的改善的附着力。 此外，PSAB层可以在制造过程中保护金属表面免于无意的氧化。 可以通过例如将金属表面化学转化成金属硅化物的薄层，完全在金属层的顶部内形成PSAB层。 PSAB层的厚度，因此互连电阻可以在形成PSAB层之前通过部分钝化金属表面来控制。 可以通过用含氮化合物可控地处理金属表面以将金属转化为金属氮化物来实现这种钝化。

    PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS
    32.
    发明申请
    PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS 有权
    等离子体活化沉积膜

    公开(公告)号：US20120077349A1

    公开(公告)日：2012-03-29

    申请号：US13011569

    申请日：2011-01-21

    申请人： Ming Li ,  Hu Kang ,  Mandyam Sriram ,  Adrien LaVoie

    发明人： Ming Li ,  Hu Kang ,  Mandyam Sriram ,  Adrien LaVoie

    IPC分类号： H01L21/383

    CPC分类号： H01L21/02104 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76898

    摘要： Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.

    摘要翻译： 本文描述了使用等离子体激活的保形膜沉积（CFD）工艺沉积薄保形膜的实施例。 在一个实例中，处理衬底的方法包括：将光致抗蚀剂施加到衬底，通过步进器将光致抗蚀剂曝光，将图案图案化并将图案转移到衬底，从衬底选择性地去除光致抗蚀剂， 底物进入处理站，并且在处理站中，在第一阶段中，在第一阶段中产生自由基，并且将基团吸附到基底上以形成活性物质，在第一清洗阶段中，在第二阶段中以第二阶段净化处理站 将反应性等离子体供应到所述表面，所述反应性等离子体被配置为与所述活性物质反应并产生所述膜，并且在第二清除阶段中清除所述处理站。

    Protective self-aligned buffer layers for damascene interconnects
    37.
    发明授权
    Protective self-aligned buffer layers for damascene interconnects 有权
    用于大马士革互连的保护性自对准缓冲层

    公开(公告)号：US08021486B1

    公开(公告)日：2011-09-20

    申请号：US12693645

    申请日：2010-01-26

    申请人： Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

    发明人： Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/76849 ,  H01L21/67207 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  Y10S414/139

    摘要： Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating PSAB layers are formed not only at the surface of the metal layers, but also within the unexposed portions of the metal lines. Encapsulating PSAB layer, for example, can surround the metal line with the PSAB material, thereby protecting interfaces between the metal line and diffusion barriers. Encapsulating PSAB layers can be formed by treating the exposed surfaces of metal lines with GeH4. Capping PSAB layers can be formed by treating the exposed surfaces of metal lines with SiH4. Interconnects having both a silicon-containing capping PSAB layer and a germanium-containing encapsulating PSAB layer provide good performance in terms of adhesion, resistance shift, and electromigration characteristics.

    摘要翻译： 封盖保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面上选择性地形成的材料层。 不仅在金属层的表面，而且在金属线的未曝光部分内形成封装的PSAB层。 例如，封装的PSAB层可以用PSAB材料围绕金属线，从而保护金属线和扩散阻挡层之间的界面。 可以通过用GeH 4处理金属线的暴露表面来形成封装的PSAB层。 可以通过用SiH 4处理金属线的暴露表面来形成封盖PSAB层。 具有含硅封端PSAB层和含锗封装PSAB层的互连器在粘合性，电阻位移和电迁移特性方面提供良好的性能。

    Protective self-aligned buffer layers for damascene interconnects
    38.
    发明授权
    Protective self-aligned buffer layers for damascene interconnects 有权
    用于大马士革互连的保护性自对准缓冲层

    公开(公告)号：US07704873B1

    公开(公告)日：2010-04-27

    申请号：US11726363

    申请日：2007-03-20

    申请人： Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

    发明人： Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76849 ,  H01L21/67207 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  Y10S414/139

    摘要： Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating PSAB layers are formed not only at the surface of the metal layers, but also within the unexposed portions of the metal lines. Encapsulating PSAB layer, for example, can surround the metal line with the PSAB material, thereby protecting interfaces between the metal line and diffusion barriers. Encapsulating PSAB layers can be formed by treating the exposed surfaces of metal lines with GeH4. Capping PSAB layers can be formed by treating the exposed surfaces of metal lines with SiH4. Interconnects having both a silicon-containing capping PSAB layer and a germanium-containing encapsulating PSAB layer provide good performance in terms of adhesion, resistance shift, and electromigration characteristics.

    摘要翻译： 封盖保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面上选择性地形成的材料层。 不仅在金属层的表面，而且在金属线的未曝光部分内形成封装的PSAB层。 例如，封装的PSAB层可以用PSAB材料围绕金属线，从而保护金属线和扩散阻挡层之间的界面。 可以通过用GeH 4处理金属线的暴露表面来形成封装的PSAB层。 可以通过用SiH 4处理金属线的暴露表面来形成封盖PSAB层。 具有含硅封端PSAB层和含锗封装PSAB层的互连器在粘合性，电阻位移和电迁移特性方面提供良好的性能。

    Protective self-aligned buffer layers for damascene interconnects
    39.
    发明授权
    Protective self-aligned buffer layers for damascene interconnects 有权
    用于大马士革互连的保护性自对准缓冲层

    公开(公告)号：US07576006B1

    公开(公告)日：2009-08-18

    申请号：US11888323

    申请日：2007-07-30

    申请人： Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

    发明人： Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76849 ,  H01L21/67207 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  Y10S414/139

    摘要： Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating PSAB layers are formed not only at the surface of the metal layers, but also within the unexposed portions of the metal lines. Encapsulating PSAB layer, for example, can surround the metal line with the PSAB material, thereby protecting interfaces between the metal line and diffusion barriers. Encapsulating PSAB layers can be formed by treating the exposed surfaces of metal lines with GeH4. Capping PSAB layers can be formed by treating the exposed surfaces of metal lines with SiH4. Interconnects having both a silicon-containing capping PSAB layer and a germanium-containing encapsulating PSAB layer provide good performance in terms of adhesion, resistance shift, and electromigration characteristics.

    摘要翻译： 封盖保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面上选择性地形成的材料层。 不仅在金属层的表面，而且在金属线的未曝光部分内形成封装的PSAB层。 例如，封装的PSAB层可以用PSAB材料围绕金属线，从而保护金属线和扩散阻挡层之间的界面。 可以通过用GeH 4处理金属线的暴露表面来形成封装的PSAB层。 可以通过用SiH 4处理金属线的暴露表面来形成封盖PSAB层。 具有含硅封端PSAB层和含锗封装PSAB层的互连器在粘合性，电阻位移和电迁移特性方面提供良好的性能。