公开(公告)号：US09825181B2

公开(公告)日：2017-11-21

申请号：US15374356

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Kazuya Sugimoto ,  Tsutomu Murakawa ,  Motoki Nakashima ,  Shinpei Matsuda ,  Noritaka Ishihara ,  Daisuke Kurosaki ,  Toshimitsu Obonai ,  Hiroshi Kanemura ,  Junichi Koezuka

IPC: H01L29/22 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H03K17/687 ,  H01L27/105 ,  G09G3/20

CPC classification number: H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.

公开(公告)号：US09806201B2

公开(公告)日：2017-10-31

申请号：US14636477

申请日：2015-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshinori Yamada ,  Yusuke Nonaka ,  Masashi Oota ,  Yoichi Kurosawa ,  Noritaka Ishihara ,  Takashi Hamada ,  Mitsuhiro Ichijo ,  Yuji Egi

IPC: H01L29/786 ,  H01L27/1156

CPC classification number: H01L29/78693 ,  H01L27/1156 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

公开(公告)号：US09761733B2

公开(公告)日：2017-09-12

申请号：US14953632

申请日：2015-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Haruyuki Baba ,  Akio Suzuki ,  Hiromi Sawai ,  Masahiko Hayakawa ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/66 ,  H01L21/02 ,  H01L21/203

CPC classification number: H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/203 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.

公开(公告)号：US09754972B2

公开(公告)日：2017-09-05

申请号：US14688232

申请日：2015-04-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/786 ,  G02F1/1368 ,  H01L29/04 ,  H01L27/12 ,  H01L21/66 ,  H01L29/24 ,  C23C14/08 ,  H01L29/66 ,  H01L21/02

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US09583570B2

公开(公告)日：2017-02-28

申请号：US14813408

申请日：2015-07-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Ryosuke Watanabe ,  Masashi Oota ,  Noritaka Ishihara ,  Koki Inoue

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/10 ,  H01L29/24 ,  H01L29/786 ,  H01L21/66 ,  H01L29/423

CPC classification number: H01L29/1054 ,  H01L22/14 ,  H01L29/247 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.

Abstract translation: 提供了不容易引起晶体管的电特性变化并且具有高稳定性的氧化物半导体层叠膜。 此外，提供了在其沟道形成区域中包括氧化物半导体层叠膜并且具有稳定的电特性的晶体管。 氧化物半导体层叠膜包括依次堆叠并且各自含有铟，镓和锌的第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层。 第二氧化物半导体层中的铟的含量百分比高于第一氧化物半导体层和第三氧化物半导体层中的铟的含量百分比，并且通过CPM测量的氧化物半导体层叠膜的吸收系数低于或等于 在1.5eV至2.3eV的能量范围内等于3×10-3 / cm。

公开(公告)号：US11978742B2

公开(公告)日：2024-05-07

申请号：US18137032

申请日：2023-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L27/12 ,  C23C14/08 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US11804407B2

公开(公告)日：2023-10-31

申请号：US17518614

申请日：2021-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/7869 ,  H10B12/00

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US10892282B2

公开(公告)日：2021-01-12

申请号：US16024997

申请日：2018-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/04 ,  H01L21/66 ,  H01L29/24 ,  G02F1/1368 ,  G01N23/207 ,  H01L29/66 ,  C23C14/08 ,  H01L29/786 ,  H01L21/02

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20180233588A1

公开(公告)日：2018-08-16

申请号：US15947902

申请日：2018-04-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kazutaka Kuriki ,  Yuji Egi ,  Hiromi Sawai ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Daisuke Matsubayashi

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02565 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.

公开(公告)号：US10032928B2

公开(公告)日：2018-07-24

申请号：US15417266

申请日：2017-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.