摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要:
An electron beam apparatus comprises a TDI sensor 64 and a feed-through device 50. The feed-through device has a socket contact 54 for interconnecting a pin 52 attached to a flanged 51 for separating different environments and the other pin 53 making a pair with the pin 52, in which the pin 52, the other pin 53 and the socket contact 54 together construct a connecting block, and the socket contact 54 has an elastic member 61. Accordingly, even if a large number of connecting blocks are provided, the connecting force may be kept to such a low level as to prevent the breakage in the sensor. The pin 53 is connected with the TDI sensor 64, in which a pixel array has been adaptively configured based on the optical characteristic of an image projecting optical system. That sensor has a number of integration stages that can reduce the field of view of the image projecting optical system to as small as possible so that a maximal acceptable distortion within the field of view may be set larger. Further, the number of integration stage may be determined such that the data rate of the TDI sensor would not be reduced but the number of pins would not be increased as much as possible. Preferably, the number of line count may be almost equal to the number of integration stages.
摘要:
A defect inspecting apparatus includes a sample mounting device for mounting a sample; lighting and detecting apparatus for illuminating a patterned sample mounted on a mount and detecting the optical image of the reflected light obtained therefrom. Also included is a display for displaying the optical image detected by this lighting and detecting apparatus; an optical parameter setting device for setting and displaying optical parameters for the lighting and detecting apparatus on the display; and optical parameter adjusting apparatus for adjusting optical parameters set for the lighting and detecting apparatus according to the optical parameters set by the optical parameter setting apparatus; a storage device for storing comparative image data; and a defect detecting device for detecting defects from patterns formed on the sample by comparing the optical image detected by the optical image detecting apparatus with the comparative image data stored in the storage.
摘要:
In a method of measuring a three dimensional shape of an arbitrary fine pattern on a semiconductor device, an optical measurement system carries out a measurement to obtain cross-section information, and an electron microscope obtains an electron beam image of the arbitrary fine pattern. Plane information and cross-section information obtained from the electron beam image of the arbitrary fine pattern are combined to measure the three dimensional shape of the arbitrary fine pattern.
摘要:
The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
摘要:
An apparatus for inspecting particles and/or pattern defects of an object under inspection. Data processing means obtains information on size of the particles and/or the pattern defects from an intensity of the scattered light detected by the light detecting means by referring to a relationship between an intensity of scattered light from a standard particle and a size of the standard particle, and using a calibration coefficient for compensating for a change in intensity of the light of the illuminating means from a predetermined intensity.
摘要:
[Problem] To adjust astigmatism quickly with a simple algorithm by utilizing an autofocus estimation value of an image obtained from a pattern formed on a sample. [Means] A charged particle beam apparatus 300 for observing and estimating a sample W by applying a charged particle beam to sample W to detect secondary charged particles, such as electrons emitted from the sample, reflected electrons and backscattered electrons comprises astigmatism adjusting means 17 for adjusting astigmatism of the charged particle beam. Astigmatism adjusting means 17 is supplied with a correction voltage which maximizes a focus estimation value obtained from a pattern formed on sample W. Astigmatism adjusting means 17 is a multipole including a plurality of pairs of electrodes or coils facing each other to place the optical axis of the charged particle beam at the center. Also disclosed is a charged particle beam apparatus 400 capable of observation and estimation of a sample surface in a condition where no charge up exists over the whole sample W.
摘要:
An imaging control unit specifies a scan region, including an effective pixel region and a blanking region, of an image based on a magnification for electronic zooming, and converts an input optical signal into an electrical signal by scanning the scan region. The imaging control unit reads the electrical signal stored and delivers the electrical signal to an image sensor unit as picture data. An RW control unit stores the picture data in a register based on the magnification for electronic zooming, and then reads the picture data at a predetermined frame rate. A resolution converter performs interpolation processing of the picture data based on the magnification for electronic zooming.
摘要:
An object of the present invention is to provide a novel thiazole compound with specific inhibitory activity against phosphodiesterase 4. The present invention provides a compound represented by Formula (1), an optical isomer thereof, or a salt thereof: wherein R1 is a di-C1-6 alkoxyphenyl group; R2 is any one of the following groups (a) to (t): (a) a phenyl group; (b) a naphthyl group; (c) a pyridyl group; (d) a furyl group; (e) a thienyl group; (f) an isoxazolyl group; (g) a thiazolyl group; (h) a pyrrolyl group; (i) an imidazolyl group; (j) a tetrazolyl group; (k) a pyrazinyl group; (l) a thienothienyl group; (m) a benzothienyl group; (n) an indolyl group; (o) a benzimidazolyl group; (p) an indazolyl group; (q) a quinolyl group; (r) a 1,2,3,4-tetrahydroquinolyl group; (s) a quinoxalinyl group; and (t) a 1,3-benzodioxolyl group; and A is any one of the following groups (i) to (vi): (i) —CO—B— wherein B is a C1-6 alkylene group; (ii) —CO—Ba wherein Ba is a C2-6 alkenylene group; (iii) —CH(OH)—B—; (iv) —COCH(COOR3)-Bb- wherein R3 is a C1-6 alkyl group and Bb is a C1-6 alkylene group; and (v) -Bc- wherein Bc is a C2-6 alkylene group.
摘要:
An electron beam system wherein a shot noise of an electron beam can be reduced and a beam current can be made higher, and further a shaped beam is formed by a two-stage lenses so as to allow for an operation with high stability. In this electron beam system, an electron beam emitted from an electron gun is irradiated onto a sample and secondary electrons emanated from the sample are detected. The electron gun is a thermionic emission type and designed to operate in a space charge limited condition. A shaping aperture and a NA aperture are arranged in front locations of the electron gun. An image of the shaping aperture formed by an electron beam emitted from the thermionic emission electron gun is focused onto a surface of the sample through the two-stage lenses.