公开(公告)号：US12060635B2

公开(公告)日：2024-08-13

申请号：US16881787

申请日：2020-05-22

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi Moriya ,  Tadahiro Ishizaka ,  Yoshinori Morisada

IPC: B32B9/00 ,  C23C16/27 ,  C23C16/455 ,  G03F1/00 ,  H01L21/311

CPC classification number: C23C16/27 ,  C23C16/45536 ,  G03F1/00 ,  H01L21/31144

Abstract: In a hard mask formed on a target film formed on a substrate, a first film having a stress in a first direction and a second film having a stress in a second direction opposite to the first direction are alternately stacked one or more times.

公开(公告)号：US11993841B2

公开(公告)日：2024-05-28

申请号：US16996426

申请日：2020-08-18

Applicant: Tokyo Electron Limited

Inventor： Masato Araki ,  Kohichi Satoh ,  Tadahiro Ishizaka ,  Takashi Sakuma

IPC: C23C16/40 ,  C23C16/52

CPC classification number: C23C16/405 ,  C23C16/52

Abstract: There is provided a substrate processing method which includes placing a substrate on a stage provided inside a processing container, and forming a ruthenium film on the substrate, wherein forming the ruthenium film includes repeating a cycle including: supplying a ruthenium-containing gas and a CO gas into the processing container; and stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container.

公开(公告)号：US11981992B2

公开(公告)日：2024-05-14

申请号：US16929333

申请日：2020-07-15

Applicant: Tokyo Electron Limited

Inventor： Tadahiro Ishizaka ,  Naotaka Noro

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/18 ,  C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/0209 ,  C23C16/18 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/52 ,  H01L21/28518

Abstract: A method of forming a RuSi film, the method includes adsorbing silicon in a recess that is formed in a substrate and includes an insulating film by supplying a silicon-containing gas to the substrate, forming a Ru film in the recess by supplying a Ru-containing precursor to the recess in which the silicon is adsorbed, and forming a RuSi film by supplying a silicon-containing gas to the recess in which the Ru film is formed.

公开(公告)号：US11702734B2

公开(公告)日：2023-07-18

申请号：US17453528

申请日：2021-11-04

Applicant: Tokyo Electron Limited

Inventor： Shunji Yamakawa ,  Tadahiro Ishizaka ,  Kohichi Satoh ,  Masato Araki

IPC: C23C16/06 ,  C23C16/18 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/45557 ,  C23C16/52

Abstract: A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.

公开(公告)号：US11680320B2

公开(公告)日：2023-06-20

申请号：US16922784

申请日：2020-07-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/06 ,  H01L21/3205 ,  H01L21/285

CPC classification number: C23C16/45536 ,  C23C16/06 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/67017

Abstract: A ruthenium film forming method includes: causing chlorine to be adsorbed to an upper portion of a recess at a higher density than to a lower portion of the recess by supplying a chlorine-containing gas to a substrate including an insulating film and having the recess; and forming a ruthenium film in the recess by supplying a Ru-containing precursor to the recess to which the chlorine is adsorbed.

公开(公告)号：US10927453B2

公开(公告)日：2021-02-23

申请号：US15812222

申请日：2017-11-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Masaki Koizumi ,  Masaki Sano ,  Seokhyoung Hong

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/3205 ,  H01L21/285 ,  C23C16/52 ,  H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L27/105 ,  H01L29/49

Abstract: A TiN-based film includes TiON films having an oxygen content of 50% or above and TiN films which are laminated alternately on a substrate. In a TiN-based film forming method, a TiON film having an oxygen content of 50 at % or above and a TiN film are alternately formed on a substrate.

公开(公告)号：US10460988B2

公开(公告)日：2019-10-29

申请号：US15850458

申请日：2017-12-21

Applicant: Tokyo Electron Limited

Inventor： Takeshi Itatani ,  Tadahiro Ishizaka ,  Kandabara Tapily ,  Kai-Hung Yu ,  Wanjae Park

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L21/687

Abstract: A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BCl3 gas or a BCl3 gas plasma generated by introducing BCl3 gas, stopping introduction of the BCl3 gas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.

公开(公告)号：US20170317022A1

公开(公告)日：2017-11-02

申请号：US15651979

申请日：2017-07-17

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Gerrit J. Leusink ,  Cory Wajda ,  Tadahiro Ishizaka ,  Takahiro Hakamata

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L23/5226 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/53242

Abstract: A method is provided for at least partially filling a feature in a substrate. The method includes providing a substrate containing a feature, depositing a ruthenium (Ru) metal layer to at least partially fill the feature, and heat-treating the substrate to reflow the Ru metal layer in the feature.

公开(公告)号：US09406558B2

公开(公告)日：2016-08-02

申请号：US14701555

申请日：2015-05-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Tatsuo Hirasawa ,  Takashi Sakuma ,  Osamu Yokoyama

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76882 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76883

Abstract: Cu wiring fabrication method for fabricating Cu wiring with respect to substrate having interlayer dielectric film having trench formed thereon, includes: forming barrier film on surface of the trench; forming Ru film on surface of the barrier film by CVD; burying the trench by forming Cu film or Cu alloy film on the Ru film; forming Cu film or Cu alloy film at corners of bottom of the trench while re-sputtering the formed Cu film or Cu alloy film in a condition where first formed Cu film or Cu alloy film re-sputtered by an ion action of the plasma generation gas; and subsequently burying the Cu film or the Cu alloy film in the trench in condition where the Cu film or the Cu alloy film is formed on field portion of the substrate, and reflows in the trench by an ion action of the plasma generation gas.

Abstract translation: 涉及在其上形成有沟槽的具有沟槽的层间绝缘膜的衬底制造Cu布线的Cu布线制造方法包括：在沟槽的表面上形成阻挡膜; 通过CVD在阻挡膜的表面上形成Ru膜; 通过在Ru膜上形成Cu膜或Cu合金膜来掩埋沟槽; 在沟槽底部的角落处形成Cu膜或Cu合金膜，同时在通过等离子体发生气体的离子作用重新溅射的第一次形成的Cu膜或Cu合金膜的条件下再溅射形成的Cu膜或Cu合金膜 ; 并且随后在衬底的场部形成Cu膜或Cu合金膜的状态下将Cu膜或Cu合金膜埋入沟槽中，并且通过等离子体产生气体的离子作用在沟槽中回流。

公开(公告)号：US09313895B2

公开(公告)日：2016-04-12

申请号：US14098465

申请日：2013-12-05

Applicant: Tokyo Electron Limited

Inventor： Tadahiro Ishizaka ,  Kenji Suzuki ,  Atsushi Shimada

IPC: H05K3/10 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  C23C14/35 ,  H05K1/03

CPC classification number: H05K3/107 ,  C23C14/358 ,  H01L21/02063 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K2201/0338 ,  H01L2924/00

Abstract: There is provided a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a predetermined pattern in a Si-containing film of a substrate. The Cu wiring forming method includes forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition, forming a Cu film by a physical vapor deposition to fill the recess with the Cu film, and forming a Cu wiring in the recess by polishing the entire surface of the substrate by a chemical mechanical polishing.

Abstract translation: 提供了一种用于通过在基板的含Si膜中以预定图案形成的凹部中填充Cu来形成Cu布线的Cu布线形成方法。 Cu布线形成方法包括通过化学气相沉积在至少在凹部的表面上形成通过与下面的基底反应而成为自对准阻挡膜的Mn膜，通过物理气相沉积形成Cu膜以填充 具有Cu膜的凹部，并且通过化学机械抛光对基板的整个表面进行抛光来在凹部中形成Cu布线。