公开(公告)号：US20110136181A1

公开(公告)日：2011-06-09

申请号：US13057418

申请日：2009-08-07

申请人： Seigo Oe ,  Hiroshi Sato ,  Teruhiko Ide

发明人： Seigo Oe ,  Hiroshi Sato ,  Teruhiko Ide

IPC分类号： C12P19/34 ,  C12N9/12 ,  C07H21/04 ,  C12N1/21

CPC分类号： C12N9/1247

摘要： Disclosed is a T7 RNA polymerase mutant having improved thermal stability and/or specific activity in comparison with wild-type T7-like bacteriophage RNA polymerase, wherein at least one amino acid residue corresponding to at least one of the amino acid residues selected from the group at least consisting of glutamine at position 768, lysine at position 179 and valine at position 685 of the amino acid sequence that composes wild-type T7 RNA polymerase shown in SEQ ID NO: 6, is substituted with another amino acid.

摘要翻译： 公开了与野生型T7样噬菌体RNA聚合酶相比具有改进的热稳定性和/或比活性的T7RNA聚合酶突变体，其中至少一个氨基酸残基对应于选自下组的氨基酸残基 由构成SEQ ID NO：6所示的野生型T7RNA聚合酶的氨基酸序列的768位的谷氨酰胺，179位的赖氨酸和685位的缬氨酸被另一个氨基酸取代。

公开(公告)号：US20110103694A1

公开(公告)日：2011-05-05

申请号：US12908480

申请日：2010-10-20

申请人： Shunsuke Nakano ,  Hiroshi Sato

发明人： Shunsuke Nakano ,  Hiroshi Sato

IPC分类号： G06K9/46

CPC分类号： G06K9/00288 ,  G06K9/00281

摘要： An object identification apparatus which identifies an object included in an input image includes a unit which calculates correlation values of feature amounts in standard partial feature regions respectively extracted from the input images and processing targets, and correlation values of feature amounts in adaptive partial feature regions respectively extracted from the input image and processing targets, a unit which calculates similarities based on the calculated correlation values, and a unit which integrates the plurality of calculated similarities, and outputs them as an integrated similarity between the input image and registered image as the processing targets. According to the object identification apparatus, an identification performance between two specific categories, which are similarity to each other, is improved while maintain an overall identification performance.

摘要翻译： 识别输入图像中包含的对象的对象识别装置包括：分别计算从输入图像和处理对象中分别提取出的标准部分特征区域中的特征量的相关值的单位，以及自适应部分特征区域中的特征量的相关值 从输入图像和处理对象中提取的单元，基于计算出的相关值计算相似度的单元，以及将多个计算出的相似度进行积分的单位，并将其输出为输入图像和登记图像之间的综合相似度作为处理对象 。 根据对象识别装置，改善了彼此相似的两个特定类别之间的识别性能，同时保持了整体识别性能。

公开(公告)号：US07881524B2

公开(公告)日：2011-02-01

申请号：US11396701

申请日：2006-04-04

申请人： Masakazu Matsugu ,  Katsuhiko Mori ,  Masami Kato ,  Hiroshi Sato ,  Yuji Kaneda ,  Yusuke Mitarai

发明人： Masakazu Matsugu ,  Katsuhiko Mori ,  Masami Kato ,  Hiroshi Sato ,  Yuji Kaneda ,  Yusuke Mitarai

IPC分类号： G06K9/62

CPC分类号： G06K9/00362

摘要： A plurality of kinds of feature amounts are collected from image information and voice information on a person existing in a space, valid values of the collected feature amounts are calculated, feature amounts to be used for personal recognition are determined in the collected feature amounts on the basis of the calculated valid values, and personal recognition is performed by using the determined feature amounts.

摘要翻译： 从存在于空间中的人的图像信息和语音信息中收集多种特征量，计算所收集的特征量的有效值，在所收集的特征量中确定用于个人识别的特征量 计算的有效值的基础，并且通过使用确定的特征量来执行个人识别。

公开(公告)号：US07782959B2

公开(公告)日：2010-08-24

申请号：US10540641

申请日：2003-12-12

申请人： Tetsujiro Kondo ,  Hiroshi Sato

发明人： Tetsujiro Kondo ,  Hiroshi Sato

IPC分类号： H04B1/66 ,  H04N7/12 ,  H04N11/02 ,  H04N11/04

CPC分类号： G06T1/20 ,  H04N19/43

摘要： An image processing device comprising a process generation section and a plurality of series-connected operation processing units. Each of the series-connected operation processing units receives a process packet output from the process generation section and performs any processing according to an instruction contained in the process packet. The units are divided into three suites and route selection sections are respectively inserted to input side of each of the suites. If the unit which executes a process related to an input process packet is not included in the immediately following one of the suites, the respective route selection sections supply this corresponding input process packet not to the input side of that one of the suites but to the output side of that suite. The process packet moves as bypassing such a suite as not to have the unit that executes a process related to this process data, thereby reducing its processing time and its power dissipation.

摘要翻译： 一种图像处理装置，包括处理生成部和多个串联连接的动作处理部。 每个串联操作处理单元接收从处理生成部输出的处理包，并根据处理包中包含的指令进行任何处理。 单元分为三个套件，路由选择部分分别插入每个套件的输入侧。 如果执行与输入处理包相关的处理的单元不包括在紧随其后的一个套件中，则相应的路由选择部分将该相应的输入处理包提供给该套件的一个的输入侧，但是提供给 输出端。 进程分组作为绕过这样的套件而移动，不具有执行与该处理数据相关的处理的单元，从而减少其处理时间和其功率消耗。

公开(公告)号：US20100148195A1

公开(公告)日：2010-06-17

申请号：US12710181

申请日：2010-02-22

申请人： John F. Kaeding ,  Dong-Seon Lee ,  Michael Iza ,  Troy J. Baker ,  Hiroshi Sato ,  Benjamin A. Haskell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： John F. Kaeding ,  Dong-Seon Lee ,  Michael Iza ,  Troy J. Baker ,  Hiroshi Sato ,  Benjamin A. Haskell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00 ,  H01L29/205

CPC分类号： H01L21/02433 ,  C30B23/025 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

摘要翻译： 使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。 具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。

公开(公告)号：US07738347B2

公开(公告)日：2010-06-15

申请号：US11850536

申请日：2007-09-05

申请人： Mayumi Tsukamoto ,  Masaharu Fukakusa ,  Hiroshi Sato ,  Eizo Ono

发明人： Mayumi Tsukamoto ,  Masaharu Fukakusa ,  Hiroshi Sato ,  Eizo Ono

IPC分类号： G11B7/00

CPC分类号： G11B7/1378 ,  G11B7/0909 ,  G11B2007/0006 ,  G11B2007/13722

摘要： An optical pickup device includes: a laser source for emitting, to an optical disk, a laser beam having a wavelength λ1 and a laser beam having a wavelength λ2, which is longer than the wavelength λ1; a light receiver, for receiving laser beams that are reflected by the optical disk; a beam splitter, for directing, to the light receiver, the laser beams reflected by the optical disk; and an astigmatism generation element, located between the beam splitter and the light receiver, for generating the laser beams to be used for focusing control, by designating as the front of the light receiver a focal point on one of the intersecting cross sections that include the light axes of the laser beams, and by designating as the rear of the light receiver, a focal point on the other cross section, wherein the astigmatism generation element is an optical element, which is like a Fresnel lens, whose step depth is substantially a natural number times either the wavelength λ1 or the wavelength λ2.

摘要翻译： 光学拾取装置包括：激光源，用于向光盘发射波长λ1的激光束和比波长λ1长的具有波长λ2的激光束; 光接收器，用于接收由光盘反射的激光束; 分束器，用于将由光盘反射的激光束引导到光接收器; 以及位于分束器和光接收器之间的用于产生用于聚焦控制的激光束的像散生成元件，通过将光接收器的前部指定为包括 激光束的光轴，并且通过将光接收器的后部指定为另一横截面上的焦点，其中像散生成元件是像菲涅耳透镜的光学元件，其阶梯深度基本上是 自然数为波长λ1或波长λ2。

公开(公告)号：US07729271B2

公开(公告)日：2010-06-01

申请号：US11365500

申请日：2006-03-02

申请人： Kazuaki Tsuchiya ,  Hiroshi Sato

发明人： Kazuaki Tsuchiya ,  Hiroshi Sato

IPC分类号： H04J1/16 ,  H04L12/28

CPC分类号： H04L63/1416 ,  H04L43/022 ,  H04L43/16 ,  H04L45/00 ,  H04L63/1425 ,  H04L63/1458

摘要： The present invention provides a technology including, for example, a packet relay processing section to carry out packet relay, a packet sampling section to carry out packet sampling, a flow statistics counting section to take statistics of each flow, and a flow statistics generating section to generate a NetFlow export datagram, wherein the flow statistics counting section collectively counts the number of the packets or bytes received per unit time when the number does not exceed a threshold value and individually counts the number for each flow when the number exceeds the threshold value, and thereby a flow of abnormal traffic which is suspected to be DoS attack is efficiently detected with small amounts of resources (mainly memories).

摘要翻译： 本发明提供一种技术，其包括例如分组中继的分组中继处理部，进行分组采样的分组采样部，对每个流进行统计的流量统计计数部，流量统计生成部 以生成NetFlow导出数据报，其中，当该数量不超过阈值时，流量统计计数部分对每单位时间接收到的数据包或字节的数量进行统计，并且当数量超过阈值时对每个流量进行单独计数 ，从而以少量的资源（主要是存储器）有效地检测到怀疑是DoS攻击的异常业务流。

公开(公告)号：US20100096044A1

公开(公告)日：2010-04-22

申请号：US12443904

申请日：2007-10-02

申请人： Shunji Misawa ,  Sakae Inayoshi ,  Hiroshi Sato

发明人： Shunji Misawa ,  Sakae Inayoshi ,  Hiroshi Sato

IPC分类号： C23C22/34

CPC分类号： C23C8/02 ,  C23C8/34 ,  C23C28/021

摘要： The present invention provides a surface treatment method for an aluminum alloy and a surface treatment method for a magnesium alloy, which enable providing the surface of an aluminum alloy containing magnesium or the surface of a magnesium alloy with sufficient corrosion resistance to corrosive gases, while preventing the surface from scattering magnesium therefrom even when used in a vacuum at a temperature of not less than 300° C. In this method, a carbon fluoride compound is applied over the surface of the aluminum alloy containing magnesium or the surface of the magnesium alloy, followed by heating in an oxygen atmosphere, thereby forming a fluoride passivation film.

摘要翻译： 本发明提供一种铝合金的表面处理方法和镁合金的表面处理方法，其能够提供含有镁或镁合金表面的铝合金的表面，对腐蚀性气体具有足够的耐腐蚀性，同时防止 该表面即使在不低于300℃的温度下在真空中使用时也散射镁。在该方法中，在含有镁或镁合金表面的铝合金的表面上涂布氟化碳化合物， 然后在氧气氛中加热，从而形成氟化钝化膜。

公开(公告)号：US20100075219A1

公开(公告)日：2010-03-25

申请号：US12527430

申请日：2007-02-16

申请人： Shoichi Iwaya ,  Hitoshi Masumura ,  Noriyuki Sakai ,  Takayuki Fujita ,  Hiroshi Sasagawa ,  Hiroshi Sato ,  Hisao Fukumori

发明人： Shoichi Iwaya ,  Hitoshi Masumura ,  Noriyuki Sakai ,  Takayuki Fujita ,  Hiroshi Sasagawa ,  Hiroshi Sato ,  Hisao Fukumori

IPC分类号： H01M10/05 ,  H01M4/70 ,  H01M4/58 ,  H01M4/50 ,  H01M4/00 ,  H01M4/62 ,  H01M10/04 ,  H01M10/38

CPC分类号： H01M2/14 ,  H01M4/0471 ,  H01M4/13 ,  H01M4/139 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  H01M4/624 ,  H01M4/661 ,  H01M10/0525 ,  H01M10/38

摘要： In multilayer wholly solid lithium ion secondary batteries, a laminate having a collector layer of material with high conductivity superimposed on an active material layer has been disposed so as to attain a lowering of battery impedance. Consequently, in the fabrication of each of positive electrode layer and negative electrode layer, stacking of three layers consisting of an active material layer, a collector layer and an active material layer has been needed, thereby posing the problem of complex processing and high production cost. In the invention, a positive electrode layer and a negative electrode layer are fabricated from paste consisting of active material mixed with conductive substance in a given mixing ratio, and no collector layer is disposed. This realizes process simplification and manufacturing cost reduction without deterioration of battery performance and has also been effective in enhancing of battery performance, such as improvement to cycle characteristics.

摘要翻译： 在多层全固体锂离子二次电池中，已经布置了具有叠加在活性物质层上的具有高导电性的材料的集电体层的层压体，以便获得电池阻抗的降低。 因此，在正极层和负极层的制造中，需要层叠由活性物质层，集电体层和活性物质层构成的3层，因此存在复杂的加工和高生产成本的问题 。 在本发明中，正极层和负极层由以与给定混合比例的与导电物质混合的活性物质组成的糊料制成，没有设置集电体层。 这实现了过程简化和制造成本的降低，而不会降低电池性能，并且还有效地提高电池性能，例如改善循环特性。

公开(公告)号：US07667307B2

公开(公告)日：2010-02-23

申请号：US12057328

申请日：2008-03-27

申请人： Kuniharu Muto ,  Toshiyuki Hata ,  Hiroshi Sato ,  Hiroi Oka ,  Osamu Ikeda

发明人： Kuniharu Muto ,  Toshiyuki Hata ,  Hiroshi Sato ,  Hiroi Oka ,  Osamu Ikeda

IPC分类号： H01L23/495

CPC分类号： H01L23/49582 ,  H01L23/49503 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/544 ,  H01L24/05 ,  H01L24/29 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/77 ,  H01L24/78 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L29/0615 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/83205

摘要： To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire.

摘要翻译： 实现密封在其中的功率MOSFET的小型表面安装封装的导通电阻的降低。 硅芯片安装在与构成漏极引线的引线集成的管芯焊盘部分上。 硅芯片在其主表面上具有源极焊盘和栅极焊盘。 硅芯片的背面配置功率MOSFET的漏极，并通过Ag浆料粘合到芯片焊盘部分的上表面。 构成源极引线的引线通过Al带电耦合到源极焊盘，而构成栅极引线的引线通过Au线电耦合到栅极焊盘。